633 research outputs found

    Thermal characterisation of miniature hotplates used in gas sensing technology

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    The reliability of micro-electronic devices depends on the device operating temperature and therefore self-heating can have an adverse effect on the performance and reliability of these devices. Hence, thermal measurement is crucial including accurate maximum operating temperature measurements to ensure optimum reliability and good electrical performance. In the research presented in this thesis, the high temperature thermal characterisation of novel micro-electro-mechanical systems (MEMS) infra-red (IR) emitter chips for use in gas sensing technology for stable long-term operation were studied, using both IR and a novel thermo-incandescence microscopy. The IR emitters were fabricated using complementary-metal-oxide semiconductor (CMOS) based processing technology and consisted of a miniature micro-heater, fabricated using tungsten metallisation. There is a commercial drive to include MEMS micro-heaters in portable electronic applications including gas sensors and miniaturised IR spectrometers where low power consumption is required. IR thermal microscopy was used to thermally characterise these miniature MEMS micro-heaters to temperatures approaching 700 °C. The research work has also enabled further development of novel thermal measurement techniques, using carbon microparticle infra-red sensors (MPIRS) with the IR thermal microscopy. These microparticle sensors, for the first time, have been used to make more accurate high temperature (approaching 700 °C) spot measurements on the IR transparent semiconductor membrane of the micro-heater. To substantially extend the temperature measurement range of the IR thermal microscope, and to obtain the thermal profiles at elevated temperatures (> 700 °C), a novel thermal measurement approach has been developed by calibrating emitted incandescence radiation in the optical region as a function of temperature. The calibration was carried out using the known melting point (MP) of metal microparticles. The method has been utilised to obtain the high temperature thermo-optical characterisation of the MEMS micro-heaters to temperatures in excess of 1200 °C. The measured temperature results using thermo-incandescence microscopy were compared with calculated electrical temperature results. The results indicated the thermo-incandescence measurements are in reasonable agreement (± 3.5 %) with the electrical temperature approach. Thus, the measurement technique using optical incandescent radiation extends the range of conventional IR microscopy and shows a great potential for making very high temperature spot measurements on electronic devices. The high power (> 500mW) electrical characterisation of the MEMS micro-heaters were also analysed to assess the reliability. The electrical performance results on the MEMS micro-heaters indicated failures at temperatures greater than 1300 °C and Scanning Electron Microscope (SEM) was used to analyse the failure modes

    Nanoelectromechanical Sensors based on Suspended 2D Materials

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    The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.Comment: Review pape

    EUROSENSORS XVII : book of abstracts

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    Fundação Calouste Gulbenkien (FCG).Fundação para a Ciência e a Tecnologia (FCT)

    Ancient and historical systems

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    Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-Force magnetometers

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    Tesi en modalitat de compendi de publicacionsToday, the most common form of mass-production semiconductor device fabrication is Complementary Metal-Oxide Semiconductor (CMOS) technology. The dedicated Integrated Circuit (IC) interfaces of commercial sensors are manufactured using this technology. The sensing elements are generally implemented using Micro-Electro-Mechanical-Systems (MEMS), which need to be manufactured using specialized micro-machining processes. Finally, the CMOS circuitry and the MEMS should ideally be combined in a single package. For some applications, integration of CMOS electronics and MEMS devices on a single chip (CMOS-MEMS) has the potential of reducing fabrication costs, size, parasitics and power consumption, compared to other integration approaches. Remarkably, a CMOS-MEMS device may be built with the back-end-of-line (BEOL) layers of the CMOS process. But, despite its advantages, this particular approach has proven to be very challenging given the current lack of commercial products in the market. The main objective of this Thesis is to prove that a high-performance MEMS, sealed and packaged in a standard package, may be accurately modeled and manufactured using the BEOL layers of a CMOS process in a reliable way. To attain this, the first highly reliable novel CMOS-MEMS Lorentz Force Magnetometer (LFM) was successfully designed, modeled, manufactured, characterized and subjected to several reliability tests, obtaining a comparable or superior performance to the typical solid-state magnetometers used in current smartphones. A novel technique to avoid magnetic offsets, the main drawback of LFMs, was presented and its performance confirmed experimentally. Initially, the issues encountered in the manufacturing process of MEMS using the BEOL layers of the CMOS process were discouraging. Vapor HF release of MEMS structures using the BEOL of CMOS wafers resulted in undesirable damaging effects that may lead to the conclusion that this manufacturing approach is not feasible. However, design techniques and workarounds for dealing with the observed issues were devised, tested and implemented in the design of the LFM presented in this Thesis, showing a clear path to successfully fabricate different MEMS devices using the BEOL.Hoy en día, la forma más común de producción en masa es una tecnología llamada Complementary Metal-Oxide Semiconductor (CMOS). La interfaz de los circuitos integrados (IC) de sensores comerciales se fabrica usando, precisamente, esta tecnología. Actualmente es común que los sensores se implementen usando Sistemas Micro-Electro-Mecánicos (MEMS), que necesitan ser fabricados usando procesos especiales de micro-mecanizado. En un último paso, la circuitería CMOS y el MEMS se combinan en un único elemento, llamado package. En algunas aplicaciones, la integración de la electrónica CMOS y los dispositivos MEMS en un único chip (CMOS-MEMS) alberga el potencial de reducir los costes de fabricación, el tamaño, los parásitos y el consumo, al compararla con otras formas de integración. Resulta notable que un dispositivo CMOS-MEMS pueda ser construido con las capas del back-end-of-line (BEOL) de un proceso CMOS. Pero, a pesar de sus ventajas, este enfoque ha demostrado ser un gran desafío como demuestra la falta de productos comerciales en el mercado. El objetivo principal de esta Tesis es probar que un MEMS de altas prestaciones, sellado y empaquetado en un encapsulado estándar, puede ser correctamente modelado y fabricado de una manera fiable usando las capas del BEOL de un proceso CMOS. Para probar esto mismo, el primer magnetómetro CMOS-MEMS de fuerza de Lorentz (LFM) fue exitosamente diseñado, modelado, fabricado, caracterizado y sometido a varias pruebas de fiabilidad, obteniendo un rendimiento comparable o superior al de los típicos magnetómetros de estado sólido, los cuales son usados en móviles actuales. Cabe destacar que en esta Tesis se presenta una novedosa técnica con la que se evitan offsets magnéticos, el mayor inconveniente de los magnetómetros de fuerza Lorentz. Su efectividad fue confirmada experimentalmente. En los inicios, los problemas asociados al proceso de fabricación de MEMS usando las capas BEOL de obleas CMOS resultaba desalentador. Liberar estructuras MEMS hechas con obleas CMOS con vapor de HF producía efectos no deseados que bien podrían llevar a la conclusión de que este enfoque de fabricación no es viable. Sin embargo, se idearon y probaron técnicas de diseño especiales y soluciones ad-hoc para contrarrestar estos efectos no deseados. Se implementaron en el diseño del magnetómetro de Lorentz presentado en esta Tesis, arrojando excelentes resultados, lo cual despeja el camino hacia la fabricación de diferentes dispositivos MEMS usando las capas BEOL.Postprint (published version

    Electron Quantum Tunneling Sensors

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    Quantum tunneling sensors are typically ultra-sensitive devices which have been specifically designed to convert a stimulus into an electronic signal using the wondrous principles of quantum mechanical tunneling. In the early 1990s, William Kaiser developed one of the first micromachined quantum tunneling sensors as part of his work with the Nasa Jet Propulsion Laboratory. Since then, there have been scattered attempts at utilizing this phenomenon for the development of a variety of physical and chemical sensors. Although these devices demonstrate unique characteristics such as high sensitivity, the principle of quantum tunneling often acts as a double-edged sword and is responsible for certain drawbacks of this sensor family. In this review, we briefly explain the underlying working principles of quantum tunneling and how they are used to design miniaturized quantum tunneling sensors. We then proceed to describe an overview of the various attempts at developing such sensors. Next, we discuss their current need and recent resurgence. Finally, we describe various advantages and shortcomings of these sensors and end this review with an insight into the potential of this technology and prospects.Comment: arXiv admin note: substantial text overlap with arXiv:2006.1279

    Fully Integrated Biochip Platforms for Advanced Healthcare

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    Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications

    Advances in nanomaterials integration in CMOS-based electrochemical sensors: a review

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    The monolithic integration of electrochemical sensors with instrumentation electronics on semiconductor technology is a promising approach to achieve sensor scalability, miniaturization and increased signal to noise ratio. Such an integration requires post-process modification of microchips (or wafers) fabricated in standard semiconductor technology (e.g. CMOS) to develop sensitive and selective sensing electrodes. This review focuses on the post-process fabrication techniques for addition of nanomaterials to the electrode surface, a key component in the construction of electrochemical sensors that has been widely used to achieve surface reactivity and sensitivity. Several CMOS-compatible techniques are summarized and discussed in this review for the deposition of nanomaterials such as gold, platinum, carbon nanotubes, polymers and metal oxide/nitride nanoparticles. These techniques include electroless deposition, electro-chemical deposition, lift-off, micro-spotting, dip-pen lithography, physical adsorption, self-assembly and hydrothermal methods. Finally, the review is concluded and summarized by stating the advantages and disadvantages of these deposition methods

    Skin-Integrated wearable systems and implantable biosensors: a comprehensive review

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    Biosensors devices have attracted the attention of many researchers across the world. They have the capability to solve a large number of analytical problems and challenges. They are future ubiquitous devices for disease diagnosis, monitoring, treatment and health management. This review presents an overview of the biosensors field, highlighting the current research and development of bio-integrated and implanted biosensors. These devices are micro- and nano-fabricated, according to numerous techniques that are adapted in order to offer a suitable mechanical match of the biosensor to the surrounding tissue, and therefore decrease the body’s biological response. For this, most of the skin-integrated and implanted biosensors use a polymer layer as a versatile and flexible structural support, combined with a functional/active material, to generate, transmit and process the obtained signal. A few challenging issues of implantable biosensor devices, as well as strategies to overcome them, are also discussed in this review, including biological response, power supply, and data communication.This research was funded by FCT- FUNDAÇÃO PARA A CIÊNCIA E TECNOLOGIA, grant numbers: PTDC/EMD-EMD/31590/2017 and PTDC/BTM-ORG/28168/2017
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