Electrospun amplified fiber optics

A lot of research is focused on all-optical signal processing, aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for an efficient signal transmission. However, the complex fabrication methods, involving high-temperature processes performed in highly pure environment, slow down the fabrication and make amplified components expensive with respect to an ideal, high-throughput and room temperature production. Here, we report on near infrared polymer fiber amplifiers, working over a band of about 20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and show amplified spontaneous emission with good gain coefficients as well as low optical losses (a few cm^-1). The amplification process is favoured by the high fiber quality and low self-absorption. The found performance metrics promise to be suitable for short-distance operation, and the large variety of commercially-available doping dyes might allow for effective multi-wavelength operation by electrospun amplified fiber optics.Comment: 27 pages, 8 figure

Inhomogeneous Gain Saturation in EDF: Experiment and Modeling

Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental methods and a gain's model. Our experimental method allow us to measure the first homogeneous linewidth of the 1.5 $\mu$m erbium emission with gain spectral hole burning consistently with the other measurement in the literature and the model explains the differences observed in literature between GSHB and other measurement methods

Complete characterization of ultrashort pulse sources at 1550 nm

This paper reviews the use of frequency-resolved optical gating (FROG) to characterize mode-locked lasers producing ultrashort pulses suitable for high-capacity optical communications systems at wavelengths around 1550 nm, Second harmonic generation (SHG) FROG is used to characterize pulses from a passively mode-locked erbium-doped fiber laser, and both single-mode and dual-mode gain-switched semiconductor lasers. The compression of gain-switched pulses in dispersion compensating fiber is also studied using SHG-FROG, allowing optimal compression conditions to be determined without a priori assumptions about pulse characteristics. We also describe a fiber-based FROG geometry exploiting cross-phase modulation and show that it is ideally suited to pulse characterization at optical communications wavelengths. This technique has been used to characterize picosecond pulses with energy as low as 24 pJ, giving results in excellent agreement with SHG-FROG characterization, and without any temporal ambiguity in the retrieved puls

Erbium dopants in silicon nanophotonic waveguides

The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at elevated temperatures. In order to connect and control these qubits, interfacing them with light in nanophotonic waveguides offers unique promise. Here, we present resonant spectroscopy of implanted erbium dopants in such waveguides. We overcome the requirement of high doping and above-bandgap excitation that limited earlier studies. We thus observe erbium incorporation at well-defined lattice sites with a thousandfold reduced inhomogeneous broadening of about 1 GHz and a spectral diffusion linewidth down to 45 MHz. Our study thus introduces a novel materials platform for the implementation of on-chip quantum memories, microwave-to-optical conversion, and distributed quantum information processing, with the unique feature of operation in the main wavelength band of fiber-optic communication.Comment: 7 pages, 4 figure

Effects of Post Treatments on Bismuth-Doped and Bismuth/ Erbium Co-doped Optical Fibres

Bismuth-doped and bismuth/erbium co-doped optical fibres have attracted much attention for their great potential in the photonic applications at ultrawide O, E, S, C and L bands. The effects of post treatments, including various heating, high energy ray radiation, laser radiation and H2 loading processes, on these fibres’ performance, functionality and stability have been experimentally studied. Experimental results demonstrate that these post treatments could allow us to get insights regarding the formation and the structure of bismuth active centre (BAC) and be used to control and regulate the formation of BAC

Bismuth

Bismuth—a wonder metal with unique features—plays an important role in the bismuth-related optoelectronic materials. The innovative development of bismuth optoelectronic materials will undoubtedly drive the social development and economic growth in the world towards a glorious future