Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules

SiC is a wide bandgap semiconductor with better electrothermal properties than silicon, including higher temperature of operation, higher breakdown voltage, lower losses and the ability to switch at higher frequencies. However, the power cycling performance of SiC devices in traditional silicon packaging systems is in need of further investigation since initial studies have shown reduced reliability. These traditional packaging systems have been developed for silicon, a semiconductor with different electrothermal and thermomechanical properties from SiC, hence the stresses on the different components of the package will change. Pressure packages, a packaging alternative where the weak elements of the traditional systems like wirebonds are removed, have demonstrated enhanced reliability for silicon devices however, there has not been much investigation on the performance of SiC devices in press-pack assemblies. This will be important for high power applications where reliability is critical. In this paper, SiC Schottky diodes in pressure packages have been evaluated, including the electrothermal characterisation for different clamping forces and contact materials, the thermal impedance evaluation and initial thermal cycling studies, focusing on the use of aluminium graphite as contact material

Evaluation of SiC Schottky diodes using pressure contacts

The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated

A multiphysics modeling and experimental analysis of pressure contacts in power electronics applications

This paper details a modeling and experimental assessment of the packaging process for a silicon carbide Schottky diode using pressure contacts. The work detailed in this paper is original, as it applies a combined electrothermomechanical modeling analysis to this packaging method supported by experimental validation. A key design objective for this packaging process is to identify suitable contact pad materials, heatsinks, and process variables such as clamping force to meet electrical, thermal, and reliability specifications. Molybdenum and aluminum graphite (ALG) have been identified as two suitable materials for the contact pads. Clamping forces ranging from 300 to 500 N and electric current ranging from 10 to 30 A have been investigated in terms of the resulting electrical and thermal contact resistances, temperatures, and stresses induced across the package. The performance of two heatsink designs with heat dissipation rates of 12893 and 4991 W/m2k has also been investigated. Both the modeling and initial experimental results detailed in this paper show that ALG provides better performance in terms of generating a lower average chip temperature. Both temperature and stress in the diode are predicted as a function of clamping force and load current. This will aid the packaging engineer to identify suitable process parameters to meet junction temperature requirements at different applied load currents

Electronic/electric technology benefits study

The benefits and payoffs of advanced electronic/electric technologies were investigated for three types of aircraft. The technologies, evaluated in each of the three airplanes, included advanced flight controls, advanced secondary power, advanced avionic complements, new cockpit displays, and advanced air traffic control techniques. For the advanced flight controls, the near term considered relaxed static stability (RSS) with mechanical backup. The far term considered an advanced fly by wire system for a longitudinally unstable airplane. In the case of the secondary power systems, trades were made in two steps: in the near term, engine bleed was eliminated; in the far term bleed air, air plus hydraulics were eliminated. Using three commercial aircraft, in the 150, 350, and 700 passenger range, the technology value and pay-offs were quantified, with emphasis on the fiscal benefits. Weight reductions deriving from fuel saving and other system improvements were identified and the weight savings were cycled for their impact on TOGW (takeoff gross weight) and upon the performance of the airframes/engines. Maintenance, reliability, and logistic support were the other criteria

In-flight maintenance study Final report

Sample system analysis, MF requirements, redesign, and packaging desig

The Conference on High Temperature Electronics

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment

The introduction of an holistic design approach through a teaching company scheme

Traditional design approaches separate the various functions of design such as material selection, performance modelling and tolerance specification into discrete entities. Whilst this allows more focused methods to be used at each stage, areas of conflict or benefit may be overlooked, and the designer is left to bring the loose ends together. This paper looks at a synthesis approach that draws upon a number of current design themes. The design process is considered along with various aspects such as product development, design-for-`X' methodologies and material selection. The need for the preservation of design knowledge and reasoning, the so called wh-? questions, within the process are considered along with various models of the design process. The paper draws these various aspects together to form a more holistic approach to design. The application of this technique within the Teaching Company Scheme is briefly discussed