Some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening

The paper reports some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening. The present results show how the frequency shift in quartz crystals can be influenced by heat processing prior to irradiation and how this procedure can lead to radiation hardening for obtaining precise frequencies and time intervals from quartz oscillators in space

Radiation hardening of MOS devices by boron

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations

Radiation hardening of components and systems for nuclear rocket vehicle applications

The results of the analysis of the S-2 and S-4B components, although incomplete, indicate that many Saturn 5 components and subsystems, e.g., pumps, valves, etc., can be radiation hardened to meet NRV requirements by material substitution and minor design modifications. Results of these analyses include (1) recommended radiation tolerance limits for over 100 material applications; (2) design data which describes the components of each system; (3) presentation of radiation hardening examples of systems; and (4) designing radiation effects tests to supply data for selecting materials

Voyager electronic parts radiation program, volume 1

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface

Some new results on the frequency characteristics on quartz crystals irradiated by ionizing and particle radiations

The frequency behavior of AT-cut quartz crystals irradiated by X -, gamma rays and fast neutrons. Initial instability in frequency for gamma and neutron irradiated crystals was found. All the different radiations first give a negative frequency shift at lower doses which are followed by positive frequency shift for increased doses. Results are explained in terms of the fundamental crystal structure. Applications of the frequency results for radiation hardening are proposed

Numerical Models for the Diffuse Ionized Gas in Galaxies. II. Three-dimensional radiative transfer in inhomogeneous interstellar structures as a tool for analyzing the diffuse ionized gas

Aims: We systematically explore a plausible subset of the parameter space involving effective temperatures and metallicities of the ionizing stellar sources, the effects of the hardening of their radiation by surrounding leaky HII regions with different escape fractions, as well as different scenarios for the clumpiness of the DIG, and compute the resulting line strength ratios for a number of diagnostic optical emission lines. Methods: For the ionizing fluxes we compute a grid of stellar spectral energy distributions (SEDs) from detailed, fully non-LTE model atmospheres that include the effects of stellar winds and line blocking and blanketing. To calculate the ionization and temperature structure in the HII regions and the diffuse ionized gas we use spherically symmetric photoionization models as well as state-of-the-art three-dimensional (3D) non-LTE radiative transfer simulations, considering hydrogen, helium, and the most abundant metals. Results: We provide quantitative predictions of how the line ratios from HII regions and the DIG vary as a function of metallicity, stellar effective temperature, and escape fraction from the HII region. The range of predicted line ratios reinforces the hypothesis that the DIG is ionized by (filtered) radiation from hot stars; however, comparison of observed and predicted line ratios indicates that the DIG is typically ionized with a softer SED than predicted by the chosen stellar population synthesis model. Even small changes in simulation parameters like the clumping factor can lead to considerable variation in the ionized volume. Both for a more homogeneous gas and a very inhomogeneous gas containing both dense clumps and channels with low gas density, the ionized region in the dilute gas above the galactic plane can cease to be radiation-bounded, allowing the ionizing radiation to leak into the intergalactic medium.Comment: 21 pages, 9 figures, accepted by A&

EuFRATE: European FPGA Radiation-hardened Architecture for Telecommunications

The EuFRATE project aims to research, develop and test radiation-hardening methods for telecommunication payloads deployed for Geostationary-Earth Orbit (GEO) using Commercial-Off-The-Shelf Field Programmable Gate Arrays (FPGAs). This project is conducted by Argotec Group (Italy) with the collaboration of two partners: Politecnico di Torino (Italy) and Technische Universit¨at Dresden (Germany). The idea of the project focuses on high-performance telecommunication algorithms and the design and implementation strategies for connecting an FPGA device into a robust and efficient cluster of multi-FPGA systems. The radiation-hardening techniques currently under development are addressing both device and cluster levels, with redundant datapaths on multiple devices, comparing the results and isolating fatal errors. This paper introduces the current state of the project’s hardware design description, the composition of the FPGA cluster node, the proposed cluster topology, and the radiation hardening techniques. Intermediate stage experimental results of the FPGA communication layer performance and fault detection techniques are presented. Finally, a wide summary of the project’s impact on the scientific community is provided

FPGA‐SRAM Soft Error Radiation Hardening

Due to integrated circuit technology scaling, a type of radiation effects called single event upsets (SEUs) has become a major concern for static random access memories (SRAMs) and thus for SRAM‐based field programmable gate arrays (FPGAs). These radiation effects are characterized by altering data stored in SRAM cells without permanently damaging them. However, SEUs can lead to unpredictable behavior in SRAM‐based FPGAs. A new hardening technique compatible with the current FPGA design workflows is presented. The technique works at the cell design level, and it is based on the modulation of cell transistor channel width. Experimental results show that to properly harden an SRAM cell, only some transistors have to be increased in size, while others need to be minimum sized. So, with this technique, area can be used in the most efficient way to harden SRAMs against radiation. Experimental results on a 65‐nm complementary metal‐oxide‐semiconductor (CMOS) SRAM demonstrate that the number of SEU events can be roughly reduced to 50% with adequate transitory sizing, while area is kept constant or slightly increased

Adaptive-Hybrid Redundancy for Radiation Hardening

An Adaptive-Hybrid Redundancy (AHR) mitigation strategy is proposed to mitigate the effects of Single Event Upset (SEU) and Single Event Transient (SET) radiation effects. AHR is adaptive because it switches between Triple Modular Redundancy (TMR) and Temporal Software Redundancy (TSR). AHR is hybrid because it uses hardware and software redundancy. AHR is demonstrated to run faster than TSR and use less energy than TMR. Furthermore, AHR allows space vehicle designers, mission planners, and operators the flexibility to determine how much time is spent in TMR and TSR. TMR mode provides faster processing at the expense of greater energy usage. TSR mode uses less energy at the expense of processing speed. AHR allows the user to determine the optimal balance between these modes based on their mission needs and changes can be made even after the space vehicle is operational. Radiation testing was performed to determine the SEU injection rate for simulations and analyses. A Field Programmable Gate Array (FPGA) was used to expedite testing in hardware