Distribution-graph based approach and extended tree growing technique in power-constrained block-test scheduling

A distribution-graph based scheduling algorithm is proposed together with an extended tree growing technique to deal with the problem of unequal-length block-test scheduling under power dissipation constraints. The extended tree growing technique is used in combination with the classical scheduling approach in order to improve the test concurrency having assigned power dissipation limits. Its goal is to achieve a balanced test power dissipation by employing a least mean square error function. The least mean square error function is a distribution-graph based global priority function. Test scheduling examples and experiments highlight in the end the efficiency of this approach towards a system-level test scheduling algorithm

Automated Synthesis of SEU Tolerant Architectures from OO Descriptions

SEU faults are a well-known problem in aerospace environment but recently their relevance grew up also at ground level in commodity applications coupled, in this frame, with strong economic constraints in terms of costs reduction. On the other hand, latest hardware description languages and synthesis tools allow reducing the boundary between software and hardware domains making the high-level descriptions of hardware components very similar to software programs. Moving from these considerations, the present paper analyses the possibility of reusing Software Implemented Hardware Fault Tolerance (SIHFT) techniques, typically exploited in micro-processor based systems, to design SEU tolerant architectures. The main characteristics of SIHFT techniques have been examined as well as how they have to be modified to be compatible with the synthesis flow. A complete environment is provided to automate the design instrumentation using the proposed techniques, and to perform fault injection experiments both at behavioural and gate level. Preliminary results presented in this paper show the effectiveness of the approach in terms of reliability improvement and reduced design effort

Interconnect research influenced

This article shows that Rent's rule can be viewed as a fundamental law of nature with respect to electronic circuits. As there are many interpretations of the rule, this article will shed some light on the core of Rent's rule and the research that has been built on it

Nanometer VLSI placement and optimization for multi-objective design closure

In a VLSI physical synthesis flow, placement directly defines the interconnection, which affects many other design objectives, such as timing, power consumption, congestion, and thermal issues. With the scaling of technology, the relative interconnect delay increases dramatically. As a result, placement has become a bottleneck in deep sub-micron physical synthesis. In this dissertation, I propose several optimization algorithms from global placement, placement migration, timing driven placements, to incremental power optimizations for multi-objective VLSI design closure. The first work is DPlace, a new global placement algorithm that scales well to the modern large-scale circuit placement problems. DPlace simulates the natural diffusion process to spread cells smoothly over the placement region, and uses both analytical and discrete techniques to improve the wire length. However, global placement is never sufficient for multi-objective design closure, a variety of design objectives have to be improved incrementally, such as timing, routing congestion, signal integrity, and heat distribution. Placement migration is a critical step to address the cell overlaps appearing during incremental optimizations. To achieve high placement stability, I propose a computational geometry based placement migration flow to cope with placement changes, and a new stability metric to measure the “similarity” between two placements accurately. Our placement migration algorithm has clear advantage over conventional legalization algorithms such that the neighborhood characteristics of the original placement are preserved. For timing closure in high performance designs, I present a linear programming based incremental timing driven placement to improve the timing on critical paths directly. I further present an efficient timing driven placement algorithm (Pyramids). Two formulations of Pyramids are proposed, which are suitable for different optimization stages in a physical synthesis flow. Both approaches find the optimal location for timing of a cell in constant time, through computational geometry based approaches. For fast convergence of design closure, placement should be integrated with other optimization techniques. I propose to combine placement, gate sizing and Vt swapping techniques to reduce the total power consumption, especially the leakage power, which is becoming increasingly critical for nanometer VLSI design closure.Electrical and Computer Engineerin

A 90 nm CMOS 16 Gb/s Transceiver for Optical Interconnects

Interconnect architectures which leverage high-bandwidth optical channels offer a promising solution to address the increasing chip-to-chip I/O bandwidth demands. This paper describes a dense, high-speed, and low-power CMOS optical interconnect transceiver architecture. Vertical-cavity surface-emitting laser (VCSEL) data rate is extended for a given average current and corresponding reliability level with a four-tap current summing FIR transmitter. A low-voltage integrating and double-sampling optical receiver front-end provides adequate sensitivity in a power efficient manner by avoiding linear high-gain elements common in conventional transimpedance-amplifier (TIA) receivers. Clock recovery is performed with a dual-loop architecture which employs baud-rate phase detection and feedback interpolation to achieve reduced power consumption, while high-precision phase spacing is ensured at both the transmitter and receiver through adjustable delay clock buffers. A prototype chip fabricated in 1 V 90 nm CMOS achieves 16 Gb/s operation while consuming 129 mW and occupying 0.105 mm^2

Motion estimation and CABAC VLSI co-processors for real-time high-quality H.264/AVC video coding

Real-time and high-quality video coding is gaining a wide interest in the research and industrial community for different applications. H.264/AVC, a recent standard for high performance video coding, can be successfully exploited in several scenarios including digital video broadcasting, high-definition TV and DVD-based systems, which require to sustain up to tens of Mbits/s. To that purpose this paper proposes optimized architectures for H.264/AVC most critical tasks, Motion estimation and context adaptive binary arithmetic coding. Post synthesis results on sub-micron CMOS standard-cells technologies show that the proposed architectures can actually process in real-time 720 × 480 video sequences at 30 frames/s and grant more than 50 Mbits/s. The achieved circuit complexity and power consumption budgets are suitable for their integration in complex VLSI multimedia systems based either on AHB bus centric on-chip communication system or on novel Network-on-Chip (NoC) infrastructures for MPSoC (Multi-Processor System on Chip

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates