6,696 research outputs found

    A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

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    © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

    Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver

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    A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver

    Performance analysis and design optimization of parallel-type slew-rate enhancers for switched-capacitor applications

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    The design of single-stage OTAs for accurate switched-capacitor circuits involves challenging trade-offs between speed and power consumption. The addition of a Slew-Rate Enhancer (SRE) circuit placed in parallel to the main OTA (parallel-type SRE) constitutes a viable solution to reduce the settling time, at the cost of low-power overhead and no modifications of the main OTA. In this work, a practical analytical model has been developed to predict the settling time reduction achievable with OTA/SRE systems and to show the effect of the various design parameters. The model has been applied to a real case, consisting of the combination of a standard folded-cascode OTA with an existing parallel-type SRE solution. Simulations performed on a circuit designed with a commercial 180-nm CMOS technology revealed that the actual settling-time reduction was significantly smaller than predicted by the model. This discrepancy was explained by taking into account the internal delays of the SRE, which is exacerbated when a high output current gain is combined with high power efficiency. To overcome this problem, we propose a simple modification of the original SRE circuit, consisting in the addition of a single capacitor which temporarily boosts the OTA/SRE currents reducing the internal turn-on delay. With the proposed approach a settling-time reduction of 57% has been demonstrated with an SRE that introduces only a 10% power-overhead with respect of the single OTA solution. The robustness of the results have been validated by means of Monte-Carlo simulations

    Tunable n-path notch filters for blocker suppression: modeling and verification

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    N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

    A 12b 250 MS/s Pipelined ADC With Virtual Ground Reference Buffers

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    The virtual ground reference buffer (VGRB) technique is introduced as a means to improve the performance of switched-capacitor circuits. The technique enhances the performance by improving the feedback factor of the op-amp without affecting the signal gain. The bootstrapping action of the level-shifting buffers relaxes key op-amp performance requirements including unity-gain bandwidth, noise, open-loop gain and offset compared with conventional circuits. This reduces the design complexity and the power consumption of op-amp based circuits. Based on this technique, a 12 b pipelined ADC is implemented in 65 nm CMOS that achieves 67.0 dB SNDR at 250 MS/s and consumes 49.7 mW of power from a 1.2 V power supply
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