8 research outputs found

    Protein structured reservoir computing for spike-based pattern recognition

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    Nowadays we witness a miniaturisation trend in the semiconductor industry backed up by groundbreaking discoveries and designs in nanoscale characterisation and fabrication. To facilitate the trend and produce ever smaller, faster and cheaper computing devices, the size of nanoelectronic devices is now reaching the scale of atoms or molecules - a technical goal undoubtedly demanding for novel devices. Following the trend, we explore an unconventional route of implementing a reservoir computing on a single protein molecule and introduce neuromorphic connectivity with a small-world networking property. We have chosen Izhikevich spiking neurons as elementary processors, corresponding to the atoms of verotoxin protein, and its molecule as a ‘hardware’ architecture of the communication networks connecting the processors. We apply on a single readout, layer various training methods in a supervised fashion to investigate whether the molecular structured Reservoir Computing (RC) system is capable to deal with machine learning benchmarks. We start with the Remote Supervised Method, based on Spike-Timing-Dependent-Plasticity, and carry on with linear regression and scaled conjugate gradient back-propagation training methods. The RC network is evaluated as a proof-of-concept on the handwritten digit images from the standard MNIST and the extended MNIST datasets and demonstrates acceptable classification accuracies in comparison with other similar approaches

    Operating Coupled VO-Based Oscillators for Solving Ising Models

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    Coupled nano-oscillators are attracting increasing interest because of their potential to perform computation efficiently, enabling new applications in computing and information processing. The potential of phase transition devices for such dynamical systems has recently been recognized. This paper investigates the implementation of coupled VO2-based oscillator networks to solve combinatorial optimization problems. The target problem is mapped to an Ising model, which is solved by the synchronization dynamics of the system. Different factors that impact the probability of the system reaching the ground state of the Ising Hamiltonian and, therefore, the optimum solution to the corresponding optimization problem, are analyzed. The simulation-based analysis has led to the proposal of a novel Second-Harmonic Injection Locking (SHIL) schedule. Its main feature is that SHIL signal amplitude is repeatedly smoothly increased and decreased. Reducing SHIL strength is the mechanism that enables escaping from local minimum energy states. Our experiments show better results in terms of success probability than previously reported approaches. An experimental Oscillatory Ising Machine (OIM) has been built to validate our proposal.</p

    Threshold Switching and Self-Oscillation in Niobium Oxide

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    Volatile threshold switching, or current controlled negative differential resistance (CC-NDR), has been observed in a range of transition metal oxides. Threshold switching devices exhibit a large non-linear change in electrical conductivity, switching from an insulating to a metallic state under external stimuli. Compact, scalable and low power threshold switching devices are of significant interest for use in existing and emerging technologies, including as a selector element in high-density memory arrays and as solid-state oscillators for hardware-based neuromorphic computing. This thesis explores the threshold switching in amorphous NbOx and the properties of individual and coupled oscillators based on this response. The study begins with an investigation of threshold switching in Pt/NbOx/TiN devices as a function device area, NbOx film thickness and temperature, which provides important insight into the structure of the self-assembled switching region. The devices exhibit combined threshold-memory behaviour after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are shown to be independent of the device area and film thickness, and the threshold power, while independent of device area, is shown to decrease with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a resistor network model, and detailed finite element simulations. The next study focuses on electrical self-oscillation of an NbOx threshold switching device incorporated into a Pearson-Anson circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz with maximum frequency tuning range of 18 MHz/V. The oscillator exhibit three distinct oscillation regimes: sporadic spiking, stable oscillation and damped oscillation. The oscillation frequency, peak-to-peak amplitude and frequency are shown to be temperature and voltage dependent with stable oscillation achieved for temperatures up to ∼380 K. A physics-based threshold switching model with inclusion of device and circuit parameters is shown to explain the oscillation waveform and characteristic. The final study explores the oscillation dynamics of capacitively coupled Nb/Nb2O5 relaxation oscillators. The coupled system exhibits rich collective behaviour, from weak coupling to synchronisation, depending on the negative differential resistance response of the individual devices, the operating voltage and the coupling capacitance. These coupled oscillators are shown to exhibit stable frequency and phase locking states at source voltages as low as 2.2 V with MHz frequency tunable range. The numerical simulation of the coupled system highlights the role of source voltage, and circuit and device capacitance in controlling the coupling modes and dynamics
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