Threshold Switching and Self-Oscillation in Niobium Oxide

Volatile threshold switching, or current controlled negative differential resistance (CC-NDR), has been observed in a range of transition metal oxides. Threshold switching devices exhibit a large non-linear change in electrical conductivity, switching from an insulating to a metallic state under external stimuli. Compact, scalable and low power threshold switching devices are of significant interest for use in existing and emerging technologies, including as a selector element in high-density memory arrays and as solid-state oscillators for hardware-based neuromorphic computing. This thesis explores the threshold switching in amorphous NbOx and the properties of individual and coupled oscillators based on this response. The study begins with an investigation of threshold switching in Pt/NbOx/TiN devices as a function device area, NbOx film thickness and temperature, which provides important insight into the structure of the self-assembled switching region. The devices exhibit combined threshold-memory behaviour after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are shown to be independent of the device area and film thickness, and the threshold power, while independent of device area, is shown to decrease with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a resistor network model, and detailed finite element simulations. The next study focuses on electrical self-oscillation of an NbOx threshold switching device incorporated into a Pearson-Anson circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz with maximum frequency tuning range of 18 MHz/V. The oscillator exhibit three distinct oscillation regimes: sporadic spiking, stable oscillation and damped oscillation. The oscillation frequency, peak-to-peak amplitude and frequency are shown to be temperature and voltage dependent with stable oscillation achieved for temperatures up to ∼380 K. A physics-based threshold switching model with inclusion of device and circuit parameters is shown to explain the oscillation waveform and characteristic. The final study explores the oscillation dynamics of capacitively coupled Nb/Nb2O5 relaxation oscillators. The coupled system exhibits rich collective behaviour, from weak coupling to synchronisation, depending on the negative differential resistance response of the individual devices, the operating voltage and the coupling capacitance. These coupled oscillators are shown to exhibit stable frequency and phase locking states at source voltages as low as 2.2 V with MHz frequency tunable range. The numerical simulation of the coupled system highlights the role of source voltage, and circuit and device capacitance in controlling the coupling modes and dynamics

Novel Computing Paradigms using Oscillators

This dissertation is concerned with new ways of using oscillators to perform computational tasks. Specifically, it introduces methods for building finite state machines (for general-purpose Boolean computation) as well as Ising machines (for solving combinatorial optimization problems) using coupled oscillator networks.But firstly, why oscillators? Why use them for computation?An important reason is simply that oscillators are fascinating. Coupled oscillator systems often display intriguing synchronization phenomena where spontaneous patterns arise. From the synchronous flashing of fireflies to Huygens' clocks ticking in unison, from the molecular mechanism of circadian rhythms to the phase patterns in oscillatory neural circuits, the observation and study of synchronization in coupled oscillators has a long and rich history. Engineers across many disciplines have also taken inspiration from these phenomena, e.g., to design high-performance radio frequency communication circuits and optical lasers. To be able to contribute to the study of coupled oscillators and leverage them in novel paradigms of computing is without question an interesting andfulfilling quest in and of itself.Moreover, as Moore's Law nears its limits, new computing paradigms that are different from mere conventional complementary metal–oxide–semiconductor (CMOS) scaling have become an important area of exploration. One broad direction aims to improve CMOS performance using device technology such as fin field-effect transistors (FinFET) and gate-all-around (GAA) FETs. Other new computing schemes are based on non-CMOS material and device technology, e.g., graphene, carbon nanotubes, memristive devices, optical devices, etc.. Another growing trend in both academia and industry is to build digital application-specific integrated circuits (ASIC) suitable for speeding up certain computational tasks, often leveraging the parallel nature of unconventional non-von Neumann architectures. These schemes seek to circumvent the limitations posed at the device level through innovations at the system/architecture level.Our work on oscillator-based computation represents a direction that is different from the above and features several points of novelty and attractiveness. Firstly, it makes meaningful use of nonlinear dynamical phenomena to tackle well-defined computational tasks that span analog and digital domains. It also differs from conventional computational systems at the fundamental logic encoding level, using timing/phase of oscillation as opposed to voltage levels to represent logic values. These differences bring about several advantages. The change of logic encoding scheme has several device- and system-level benefits related to noise immunity and interference resistance. The use of nonlinear oscillator dynamics allows our systems to address problems difficult for conventional digital computation. Furthermore, our schemes are amenable to realizations using almost all types of oscillators, allowing a wide variety of devices from multiple physical domains to serve as the substrate for computing. This ability to leverage emerging multiphysics devices need not put off the realization of our ideas far into the future. Instead, implementations using well-established circuit technology are already both practical and attractive.This work also differs from all past work on oscillator-based computing, which mostly focuses on specialized image preprocessing tasks, such as edge detection, image segmentation and pattern recognition. Perhaps its most unique feature is that our systems use transitions between analog and digital modes of operation --- unlike other existing schemes that simply couple oscillators and let their phases settle to a continuum of values, we use a special type of injection locking to make each oscillator settle to one of the several well-defined multistable phase-locked states, which we use to encode logic values for computation. Our schemes of oscillator-based Boolean and Ising computation are built upon this digitization of phase; they expand the scope of oscillator-based computing significantly.Our ideas are built on years of past research in the modelling, simulation and analysis of oscillators. While there is a considerable amount of literature (arguably since Christiaan Huygens wrote about his observation of synchronized pendulum clocks in the 17th century) analyzing the synchronization phenomenon from different perspectives at different levels, we have been able to further develop the theory of injection locking, connecting the dots to find a path of analysis that starts from the low-level differential equations of individual oscillators and arrives at phase-based models and energy landscapes of coupled oscillator systems. This theoretical scaffolding is able not only to explain the operation of oscillator-based systems, but also to serve as the basis for simulation and design tools. Building on this, we explore the practical design of our proposed systems, demonstrate working prototypes, as well as develop the techniques, tools and methodologies essential for the process

Protein structured reservoir computing for spike-based pattern recognition

Nowadays we witness a miniaturisation trend in the semiconductor industry backed up by groundbreaking discoveries and designs in nanoscale characterisation and fabrication. To facilitate the trend and produce ever smaller, faster and cheaper computing devices, the size of nanoelectronic devices is now reaching the scale of atoms or molecules - a technical goal undoubtedly demanding for novel devices. Following the trend, we explore an unconventional route of implementing a reservoir computing on a single protein molecule and introduce neuromorphic connectivity with a small-world networking property. We have chosen Izhikevich spiking neurons as elementary processors, corresponding to the atoms of verotoxin protein, and its molecule as a ‘hardware’ architecture of the communication networks connecting the processors. We apply on a single readout, layer various training methods in a supervised fashion to investigate whether the molecular structured Reservoir Computing (RC) system is capable to deal with machine learning benchmarks. We start with the Remote Supervised Method, based on Spike-Timing-Dependent-Plasticity, and carry on with linear regression and scaled conjugate gradient back-propagation training methods. The RC network is evaluated as a proof-of-concept on the handwritten digit images from the standard MNIST and the extended MNIST datasets and demonstrates acceptable classification accuracies in comparison with other similar approaches

Fabrication of Vanadium Dioxide Thin Films and their Structural, Optical and Electrical Characterization for Optoelectronic Applications

Vanadium dioxide (VO2) is a transition metal oxide that is well known for its metal-to-insulator phase transition (MIT). One of the most common forms of VO2 that has been generally studied is the thin film form. VO2 thin films are considered a strong candidate in various new-generation optical, electronic, and optoelectronic (photonic) applications. From the technology perspective, the fabrication of single-crystal VO2 thin films appears to be challenging. Up to now, research on the preparation of VO2 thin films has focused on employing different material fabrication techniques to produce high-quality VO2 thin films. The stoichiometry and quality of VO2 thin films strongly depend on the fabrication process. There is still a need to study the production of near-single-crystal, high-quality VO2 thin films and their structural, optical and electrical characterization. Secondly, the metal-to-insulator phase transition phenomenon in VO2 is a topical research field. The percolation theory has introduced some rigor in explaining the phase transition. This dissertation focuses on two aspects of research on VO2 thin films. The first aspect focuses on studying the effect of specific deposition parameters such as substrate biasing and substrate temperature on the quality of VO2 thin films. Also, the synthesis of high-quality VO2 thin films prepared on single-crystal silicon, quartz and sapphire substrates is investigated. The films are examined using various analysis techniques including Raman spectroscopy, scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDS). The optical constants, namely the refractive index (n) and the extinction coefficient (K), and the optical bandgap (Eg) of the films are extracted using the Swanepoel and Manifacier techniques. The second aspect of this dissertation covers the application of percolation theory on the phase transition in VO2 thin films. Accordingly, the topology of conducting clusters during the IMT and MIT is investigated by means of optical and electrical switching in a high-quality VO2 thin film. Additionally, self-heating-induced electrical and optical switching in VO2 thin films prepared on sapphire substrates under constant applied current pulses has been studied. The difference in the two switching dynamics is explained by a simple model based on the percolation theory