Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics

Investigation of Interconnect and Device Designs for Emerging Post-MOSFET and Beyond Silicon Technologies

Title from PDF of title page viewed May 31, 2017Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (pages 94-108)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2016The integrated circuit industry has been pursuing Moore’s curve down to deep nanoscale dimensions that would lead to the anticipated delivery of 100 billion transistors on a 300 mm² die operating below 1V supply in the next 5-10 years. However, the grand challenge is to reliably and efficiently take the full advantage of the unprecedented computing power offered by the billions of nanoscale transistors on a single chip. To mitigate this challenge, the limitations of both the interconnecting wires and semiconductor devices in integrated circuits have to be addressed. At the interconnect level, the major challenge in current high density integrated circuit is the electromagnetic and electrostatic impacts in the signal carrying lines. Addressing these problems require better analysis of interconnect resistance, inductance, and capacitance. Therefore, this dissertation has proposed a new delay model and analyzed the time-domain output response of complex poles, real poles, and double poles for resistance-inductance capacitance interconnect network based on a second order approximate transfer function. Both analytical models and simulation results show that the real poles model is much faster than the complex poles model, and achieves significantly higher accuracy in order to characterize the overshoot and undershoot of the output responses. On the other hand, the semiconductor industry is anticipating that within a decade silicon devices will be unable to meet the demands at nanoscale due to dimension and material scaling. Recently, molybdenum disulfide (MoS₂) has emerged as a new super material to replace silicon in future semiconductor devices. Besides, conventional field effect transistor technology is also reaching its thermodynamic limit. Breaking this thermal and physical limit requires adoption of new devices based on tunneling mechanism. Keeping the above mentioned trends, this dissertation also proposed a multilayer MoS₂ channel-based tunneling transistor and identifies the fundamental parameters and design specifications that need to be optimized in order to achieve higher ON-currents. A simple analytical model of the proposed device is derived by solving the time-independent Schrodinger equation. It is analytically proven that the proposed device can offer an ON-current of 80 A/m, a subthreshold swing (S) of 9.12 mV/decade, and a / ratio of 10¹².Introduction -- Previous models on interconnect designs -- Proposed delay model for interconnect design -- Investigation of tunneling for field effect transistor -- Study of molybdenum disulfide for FET applications -- Proposed molybdenum disulfide based tunnel transistor -- Conclusion -- Appendix A. Derivation of time delay model -- Appendix B. Derivation of tunneling current model Appendix C. Derivation of subthreshold swing mode

Electronic Transport Properties of Highly Doped Layered Semiconductors and Their Heterostructures

東京都立大学Tokyo Metropolitan University博士（理学）doctoral thesi

Two-dimensional electronics and optoelectronics: From materials syntheses to device applications

The current research on semiconductor device has pushed the scaling of the devices into sub-10 nanometers (nm) regime. While most of the current devices are made on silicon germanium, and III-V materials, people are looking for new materials for use in novel semiconductor devices: either for use in extremely scaled device in sub-10 or even sub-5 nm devices, or for use in other situations such as flexible electronics or low power and lower cost IoT (Internet of Things) applications. Two-dimensional (2D) materials have attracted extensive research interests in their physical, chemical and mechanical properties.Since the discovery of graphene, which a single layer carbon atoms obtained by exfoliating from graphite by scotch tape, the research activities on 2D materials have increased exponentially during the past few years. The high mobility and ultra-thin body makes graphene interesting for electronics applications. However, the lack of a bandgap of graphene led to study of other 2D materials.Two of them have attracted a lot of interests recently, one is called molybdenum disulfide (MoS2), and the other is black phosphorus. Most of my research is based on these two materials, I tried to study from the synthesis of the materials, and then study the electronics applications of these materials. In the first part of the thesis, an introduction of the background of the current research on 2D materials for electronics applications will be given. Also, the basic background of the materials I studied will be given. In the second part of the paper, I will discuss about the electronic device applications of these materials. A detailed study on heterostructure device based on van der Waals interactions will be discussed, which is new concept devices based on the unique characteristics of 2D materials. In the third part, the optoelectronic applications of the materials will be discussed. The effect of device structure will be discussed. The plasmonic structure is added to achieve better device performance, while simulations were performed to get a in-depth understanding. In the fourth part, the stability of these materials will be discussed. Unlike the traditional semiconductor materials, which has already been studied for years to make them stable and reliable for semiconductor device applications, these novel nano materials are still suffering from some stability issues. In this chapter, a detailed study of the stability of these materials are described, some of the phenomenon are quite helpful for understanding the device characteristics, while some are useful for making these device more stable

2d Suspended Fet Technology: Overcoming Scattering Effect For Ultrasensitive Reliable Biosensor

TMDs such as MoS2 is playing an important role in the field of FETs, photodetectors, thin film transistors and efficient biosensors because of their direct band-gap, high mobility, and biocompatibility. Despite these strengths, the performance and reliability of such atomic layer are easily influenced by supporting substrate. Interaction between the supporting substrate and MoS2 implies that interface control is vital for performance of devices consisting of monolayer MoS2. In particular, the Silicon dioxide (SiO2) supporting substrate has an uneven morphology and is chemically active because of trapped environmental gases, unknown functional groups, chemical adsorbates, and charges. Thus, adding another layer of MoS2 on the top of SiO2 cannot contribute charge transport clearly, which leads to the unreliable function of every single device. To solve the interface problem, suspended 2D layer devices have been reported by wet etching silicon di oxide underneath the monolayer. Freestanding MoS2 has shown 10 times greater back gate electronic mobility than the supporting on the SiO2 substrate. However, the existing SiO2 requires hazardous chemical etchants such as hydrofluoric acid (HF), which is difficult to handle and affects the 2D film structure and purity. Secondly, freestanding MoS2 sags between the two electrodes because of the high spacing (~ 2 µm), which makes it impossible to coat another layer such as hafnium oxide (HfO2) and antibodies on top of monolayer. Therefore, this structure impedes making top gate FET biosensors, which allows for only back gating. However, back gate mobility is far lesser than the top gate mobility which hinders making a highly sensitive FET-based biosensor because the sensitivity of a sensor depends on its mobility. In this work, CVD grown MoS2 channel material is transferred on self-assembled photolithographically patterned nano-gaps to achieve suspension and is covered with HfO2 to eliminate the direct functionalization of channel material. These nano-gap arrays provide mechanical strength to the monolayer and do not allow the supporting substrate to touch after coating another thin insulating layer as well as linkers/antibodies. HfO2 can be easily functionalized by silane-based linkers and antibodies (E-coli antibodies) to bring variation to the suspended 2D material by targeting a charged biomolecule (E-coli). In addition, termination of the supporting substrate leads to decrement of subthreshold swing which is inversly proportional to the sensitivity of the FET biosensor. The proposed FET biosensor has the capability to detect one molecule because of its single atomic layer as a channel material, its scalability due to the involvement of optical photolithography, and its fast response because of higher mobility