Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information

The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While degradation is commonly measured in the number of program/erase cycles experienced by a cell, the degradation is proportional to the number of electrons forced into the floating gate and later released by the erasing process. By managing the amount of charge written to the floating gate to maintain a constant read-channel mutual information, Flash lifetime can be extended. This paper proposes an overall system approach based on information theory to extend the lifetime of a flash memory device. Using the instantaneous storage capacity of a noisy flash memory channel, our approach allocates the read voltage of flash cell dynamically as it wears out gradually over time. A practical estimation of the instantaneous capacity is also proposed based on soft information via multiple reads of the memory cells.Comment: 5 pages. 5 figure

Concatenated LDPC-TCM coding for reliable storage in multi-level flash memories

In this paper, we present an efficient fault tolerant solution for multi-level per cell (MLC) flash memory that concatenates trellis coded modulation (TCM) with an outer low-density parity-check (LDPC) code. Traditional flash coding systems employ simple hard-decisions based codes, such as Bose-Chaudhuri-Hocquenghem (BCH) codes, that can correct a fixed, specified number of errors. Thanks to the Bahl, Cocke, Jelinek, and Raviv (BCJR) algorithm, the TCM decoder within the proposed design can provide soft decisions which make it possible to use the more powerful LDPC codes. Moreover, the error-correction performance is further improved since TCM can decrease the raw error rate of MLC and hence relieve the burden of outer LDPC code. The effectiveness of concatenated LDPC-TCM systems has been successfully demonstrated through computer simulations

낸드 플래시 메모리 신뢰도 향상을 위한 신호 처리 방법 연구

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2014. 2. 성원용.The capacity of NAND flash memory has been continuously increased by aggressive technology scaling and multi-level cell (MLC) data coding. However, it becomes more challenging to maintain the current growth rate of the memory density mainly because of degraded signal quality of sub-20 nm NAND flash memory. This dissertation develops signal processing techniques to improve the signal reliability of MLC NAND flash memory. In the first part of this dissertation, we develop two threshold voltage distribution estimation algorithms to compensate the effect of program-erase (PE) cycling and charge loss in MLC NAND flash memory. The sensing directed estimation (SDE) utilizes the output of multi-level memory sensing to estimate the means and the variances of the threshold voltage distribution that is modeled as a Gaussian mixture. In order to reduce memory sensing overheads for the SDE algorithm, we develop a decision directed estimation (DDE) that uses error corrected bit patterns for more frequent updates of the model parameters. We also present a combined estimation scheme that employs both the SDE and the DDE approaches to minimize the number of memory sensing operations while maintaining the estimation accuracy. The effectiveness of the SDE and the DDE algorithms is evaluated by using both simulated and real NAND flash memory, and it is demonstrated that the proposed algorithms can estimate the statistical information of threshold voltage distribution accurately. The cell-to-cell interference (CCI) is one of the major sources of bit errors in sub-20 nm NAND flash memory and becomes more severe as the size of memory cell decreases. In the second part of this dissertation, we develop a CCI cancellation algorithm that is similar to interference cancellers employed in conventional communication systems. We first provide the experimental characterization of the CCI by measuring the coupling coefficients from actual NAND flash memory with a 26 nm process technology. Then, we present a CCI cancellation algorithm that consists of the coupling coefficient estimation and the CCI removal steps. To reduce the number of memory sensing operations, the optimal quantization schemes for the proposed CCI canceller are also studied. This dissertation also develops soft-information computation schemes in order to apply soft-decision error correction to NAND flash memory. The probability density function (PDF) of the CCI removed signal is quite different from that of the original threshold voltage, which can be modeled as a Gaussian mixture. Thus, computing soft-information, such as LLR (log likelihood ratio), with the CCI removed signal is not straightforward. We propose two soft-information computation schemes that combine CCI cancellation and soft-decision error correction. In the first approach, we derive a mathematical formulation for the PDF of the CCI removed signal and directly compute the LLR values by using it. In the second approach, CCI cancellation and soft-information computation are jointly conducted. Based on the intensive simulations, it is demonstrated that the reliability of NAND flash memory is significantly improved by applying the proposed signal processing algorithms as well as soft-decision error correction.1 Introduction 14 2 NAND Flash Memory Basics 19 2.1 Basics of NAND Flash Memory 19 2.1.1 NAND Flash Memory Structure 19 2.1.2 Multi-Page Programming 20 2.1.3 Cell-to-Cell Interference 22 2.1.4 Data Retention 23 2.2 Threshold Voltage Distribution of NAND Flash Memory and Signal Modeling 25 2.2.1 Threshold Voltage Distribution and Gaussian Approximation 25 2.2.2 Modeling of Threshold Voltage Signal 27 3 Threshold Voltage Distribution Estimation 31 3.1 Introduction 31 3.2 Sensing Directed Estimation of Threshold Voltage Distribution 33 3.2.1 Cost Function 34 3.2.2 Gradient Descent Method based Parameter Search 36 3.2.3 Levenberg-Marquardt Method based Parameter Search 38 3.2.4 Experimental Results 41 3.3 Decision Directed Estimation of Threshold Voltage Distribution 50 3.3.1 Basic Idea 51 3.3.2 Applying to Two-Bit MLC NAND Flash Memory 54 3.3.3 Combined Threshold Voltage Distribution Estimation 57 3.3.4 Error Analysis 58 3.3.5 Experimental Results 64 3.4 Concluding Remarks 70 4 Cell-to-Cell Interference Cancellation 71 4.1 Introduction 71 4.2 Direct Measurement of Coupling Coefficients 73 4.2.1 Measurement Procedure 74 4.2.2 Experimental Results 77 4.3 Least Squares Method based Coupling Coefficient Estimation 83 4.4 Multi-Level Memory Sensing Schemes for CCI Cancellation 87 4.5 Experimental Results 91 4.5.1 CCI Cancellation with Simulated NAND Flash Memory 91 4.5.2 CCI Cancellation with Real NAND Flash Memory 96 4.6 Concluding Remarks 97 5 Soft-Decision Error Correction in NAND Flash Memory 99 5.1 Introduction 99 5.2 Soft-Decision Error Correction without CCI Cancellation 101 5.3 Soft-Decision Error Correction with CCI Cancellation 104 5.3.1 Soft-Information Computation using PDF of CCI Removed Signal 104 5.3.2 Joint CCI Cancellation and Soft-Information Computation 110 5.3.3 Experimental Results 115 5.4 Concluding Remarks 118 6 Conclusion 120Docto

낸드플래시 메모리 오류정정을 위한 고성능 LDPC 복호방법 연구

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2013. 8. 성원용.반도체 공정의 미세화에 따라 비트 에러율이 증가하는 낸드 플래시 메모리에서 고성능 에러 정정 방법은 필수적이다. Low-density parity-check (LDPC) 부호와 같은 연판정 에러 정정 부호는 뛰어난 에러 정정 성능을 보이지만, 높은 구현 복잡도로 인해 플래시 메모리 시스템에 적용되기 힘든 단점이 있다. 본 논문에서는 LDPC 부호의 효율적인 복호를 위해 고성능 메시지 전파 스케줄링 방법과 저 복잡도 복호 알고리즘을 제안한다. 특히 finite geometry (FG) LDPC 부호에 대한 효율적인 디코더 아키텍쳐를 제안하며, 구현된 디코더를 이용하여 낸드 플래시 메모리에 대해 연판정 복호시의 에너지 소모량에 대해 연구한다. 본 논문의 첫 번째 부분에서는 동적 스케줄링 (informed dynamic scheduling, IDS) 알고리즘의 성능향상 방법에 대해 연구한다. 이를 위해 우선 기존의 가장 빠른 수렴 속도를 보이는 IDS 알고리즘인 레지듀얼 신뢰 전파 (residual belief propagation, RBP) 알고리즘의 동작 특성을 분석하고, 이를 바탕으로 특정 노드에 메시지 갱신이 집중되는 것을 방지하여 RBP 알고리즘의 수렴속도를 증가시킨 improved RBP (iRBP) 알고리즘을 제안한다. 또한 iRBP의 뛰어난 수렴속도와 기존의 NS 알고리즘의 우수한 에러 정정 능력을 모두 갖춘 신드롬 기반의 혼합 스케줄링 (mixed scheduling) 방법을 제안한다. 끝으로 다양한 부호율의 LDPC 부호에 대한 모의실험을 통해 제안된 신드롬 기반의 혼합 스케줄링 방법이 본 논문에서 시험된 다른 모든 스케줄링 알고리즘의 성능을 능가함을 확인하였다. 논문의 두 번째 부분에서는 복호 실패시 많은 비트 에러를 발생시키는 a posteriori probability (APP) 알고리즘의 개선 방안에 방안을 제안한다. 또한 빠른 수렴속도와 우수한 에러 마루 (error-floor) 성능으로 데이터 저장장치에 적합한 FG-LDPC 부호에 대해 제안된 알고리즘이 적용된 하드웨어 아키텍처를 제안하였다. 제안된 아키텍처는 높은 노드 가중치를 가지는 FG-LDPC 부호에 적합하도록 쉬프트 레지스터 (shift registers)와 SRAM 기반의 혼합 구조를 채용하며, 높은 처리량을 얻기 위해 파이프라인된 병렬 아키텍처를 사용한다. 또한 메모리 사용량을 줄이기 위해 세 가지의 메모리 용량 감소 기법을 적용하며, 전력 소비를 줄이기 위해 두 가지의 저전력 기법을 제안한다. 본 제안된 아키텍처는 부호율 0.96의 (68254, 65536) Euclidean geometry LDPC 부호에 대해 0.13-um CMOS 공정에서 구현하였다. 마지막으로 본 논문에서는 연판정 복호가 적용된 낸드 플래시 메모리 시스템의 에너지 소모를 낮추는 방법에 대해 제안한다. 연판정 기반의 에러 정정 알고리즘은 높은 성능을 보이지만, 이는 플래시 메모리의 센싱 수와 에너지 소모를 증가 시키는 단점이 있다. 본 연구에서는 앞서 구현된 LDPC 디코더가 채용된 낸드 플래시 메모리 시스템의 에너지 소모를 분석하고, LDPC 디코더와 BCH 디코더 간의 칩 사이즈와 에너지 소모량을 비교하였다. 이와 더불어 본 논문에서는 LDPC 디코더를 이용한 센싱 정밀도 결정 방법을 제안한다. 본 연구를 통해 제안된 복호 및 스케줄링 알고리즘, VLSI 아키텍쳐, 그리고 읽기 정밀도 결정 방법을 통해 낸드 플래시 메모리 시스템의 에러 정정 성능을 극대화 하고 에너지 소모를 최소화 할 수 있다.High-performance error correction for NAND flash memory is greatly needed because the raw bit error rate increases as the semiconductor geometry shrinks for high density. Soft-decision error correction, such as low-density parity-check (LDPC) codes, offers high performance but their implementation complexity hinders wide adoption to consumer products. This dissertation proposes two high-performance message-passing schedules and a low-complexity decoding algorithm for LDPC codes. In particular, an efficient decoder architecture for finite geometry (FG) LDPC codes is proposed, and the energy consumption of soft-decision decoding for NAND flash memory is analyzed. The first part of this dissertation is devoted to improving the informed dynamic scheduling (IDS) algorithms. We analyze the behavior of the residual belief propagation (RBP), which is the fastest IDS algorithm, and develop an improved RBP (iRBP) by avoiding the concentration of message updates at a particular node. We also study the syndrome-based mixed scheduling of the iRBP and the node-wise scheduling (NS). The proposed mixed scheduling outperforms all other scheduling methods tested in this work. The next part of this dissertation is to develop a conditional variable node update scheme for the a posteriori probability (APP) algorithm. The developed algorithm is robust to decoding failures and can reduce the dynamic power consumption by lowering switching activities in the LDPC decoder. To implement the developed algorithm, we propose a memory-efficient pipelined parallel architecture for LDPC decoding. The architecture employs FG-LDPC codes that not only show fast convergence speed and good error-floor performance but also perform well with iterative decoding algorithms, which is especially suitable for data storage devices. We also developed a rate-0.96 (68254, 65536) Euclidean geometry LDPC code and implemented the proposed architecture in 0.13-um CMOS technology. This dissertation also covers low-energy error correction of NAND flash memory through soft-decision decoding. The soft-decision-based error correction algorithms show high performance, but they demand an increased number of flash memory sensing operations and consume more energy for memory access. We examine the energy consumption of a NAND flash memory system equipping an LDPC code-based soft-decision error correction circuit. The sum of energy consumed at NAND flash memory and the LDPC decoder is minimized. In addition, the chip size and energy consumption of the decoder were compared with those of two Bose-Chaudhuri-Hocquenghem (BCH) decoding circuits showing the comparable error performance and the throughput. We also propose an LDPC decoder-assisted precision selection method that needs virtually no overhead. This dissertation is intended to develop high-performance and low-power error correction circuits for NAND flash memory by studying improved decoding and scheduling algorithms, VLSI architecture, and a read precision selection method.1 Introduction 1 1.1 NAND Flash Memory 1 1.2 LDPC Codes 4 1.3 Outline of the Dissertation 6 2 LDPC Decoding and Scheduling Algorithms 8 2.1 Introduction 8 2.2 Decoding Algorithms for LDPC Codes 10 2.2.1 Belief Propagation Algorithm 10 2.2.2 Simplified Belief Propagation Algorithms 12 2.3 Message-Passing Schedules for Decoding of LDPC Codes 15 2.3.1 Static Schedules 15 2.3.2 Dynamic Schedules 17 3 Improved Dynamic Scheduling Algorithms for Decoding of LDPC Codes 22 3.1 Introduction 22 3.2 Improved Residual Belief Propagation Algorithm 23 3.3 Syndrome-Based Mixed Scheduling of iRBP and NS 26 3.4 Complexity Analysis and Simulation Results 28 3.4.1 Complexity Analysis 28 3.4.2 Simulation Results 29 3.5 Concluding Remarks 33 4 A Pipelined Parallel Architecture for Decoding of Finite-Geometry LDPC Codes 36 4.1 Introduction 36 4.2 Finite-Geometry LDPC Codes and Conditional Variable Node Update Algorithm 38 4.2.1 Finite-Geometry LDPC codes 38 4.2.2 Conditional Variable Node Update Algorithm for Fixed-Point Normalized APP-Based Algorithm 40 4.3 Decoder Architecture 46 4.3.1 Baseline Sequential Architecture 46 4.3.2 Pipelined-Parallel Architecture 54 4.3.3 Memory Capacity Reduction 57 4.4 Implementation Results 60 4.5 Concluding Remarks 64 5 Low-Energy Error Correction of NAND Flash Memory through Soft-Decision Decoding 66 5.1 Introduction 66 5.2 Energy Consumption of Read Operations in NAND Flash Memory 67 5.2.1 Voltage Sensing Scheme for Soft-Decision Data Output 67 5.2.2 LSB and MSB Concurrent Access Scheme for Low-Energy Soft-Decision Data Output 72 5.2.3 Energy Consumption of Read Operations in NAND Flash Memory 73 5.3 The Performance of Soft-Decision Error Correction over a NAND Flash Memory Channel 76 5.4 Hardware Performance of the (68254, 65536) LDPC Decoder 81 5.4.1 Energy Consumption of the LDPC Decoder 81 5.4.2 Performance Comparison of the LDPC Decoder and Two BCH Decoders 83 5.5 Low-Energy Error Correction Scheme for NAND Flash Memory 87 5.5.1 Optimum Precision for Low-Energy Decoding 87 5.5.2 Iteration Count-Based Precision Selection 90 5.6 Concluding Remarks 91 6 Conclusion 94 Bibliography 96 Abstract in Korean 110 감사의 글 112Docto

Data reliability and error correction for NAND Flash Memory System

NAND flash memory has been widely used for data storage due to its high density, high throughput, and low power. However, as the flash memory scales to smaller process technologies and stores more bits per cell, its reliability is decreasing. The error correction coding can be used to significantly improve the data reliability; nevertheless, the advanced ECCs such as low-density parity-check (LDPC) codes generally demand soft decisions while NAND flash memory channel provides hard-decisions only. Extracting the soft information requires the accurate characterization of flash memory channel and the effective design of coding schemes. To this end, we have presented a novel LDPC-TCM coding scheme for the Multilevel Cell (MLC) flash memories. The a posteriori TCM decoding algorithm is used in the scheme to generate soft information, which is fed to the LDPC decoder for further correction of data bits. It has been demonstrated that the proposed scheme can achieve higher error correction performance than the traditional hard-decisions based flash coding algorithms, and is feasible in the design practice. Further with the LDPC-TCM, we believe it is important to characterize the flash memory channel and investigate a method to calculate the soft decision for each bit, with the available channel outputs. We studied the various noises and interferences occurring in the memory channel and mathematically formulated the probability density function of the overall noise distribution. Based on the results we derived the final distribution for the cell threshold voltages, which can be used to instruct the calculation of soft decisions. The discoveries on the theoretical level have been demonstrated to be consistent with the real channel behaviours. The channel characterization and model provided in this dissertation can enable more design of soft-decisions based ECCs for future NAND flash memories. The data pattern processing algorithm deals with the write patterns and targets to lower the proportion of patterns that would introduce data errors. On the other hand, the voltages applied to the memory cells charges the MOSFET capacitances frequently on programming these data patterns, leading to the power problem. The high energy consumption and current spikes also cause reliability issue to the data stored in the flash memory. This dissertation proposes a write pattern formatting algorithm (WPFA) attempting to solve the two problems together. We have designed and implemented the algorithm and evaluated its performance through both the software simulations and hardware synthesis