Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp3d5s* tight-binding model, is presented. The effect of insertion on the interband transitions is compared with existing experimental data. As for intersubband transitions, we show that in a GaAs/AlGaAs quantum well including two AlAs and one InAs insertions, a three level {e1 , e2 , e3 } system where the transition energy e3-e2 is lower and the transition energy e2-e1 larger than the longitudinal optical phonon energy (36 meV) can be engineered together with a e3-e2 transition energy widely tunable through the TeraHertz range

Interplay between disorder and intersubband collective excitations in the two-dimensional electron gas

Intersubband absorption in modulation-doped quantum wells is usually appropriately described as a collective excitation of the confined two-dimensional electron gas. At sufficiently low electron density and low temperatures, however, the in-plane disorder potential is able to damp the collective modes by mixing the intersubband charge-density excitation with single-particle localized modes. Here we show experimental evidence of this transition. The results are analyzed within the framework of the density functional theory and highlight the impact of the interplay between disorder and the collective response of the two-dimensional electron gas in semiconductor heterostructures.Comment: 5 pages, 4 figures, RevTeX. Accepted for publication in Phys. Rev. B (Rapid. Comm.

Self-consistent analysis of carrier-transport and carrier-capture dynamics in quantum cascade intersubband semiconductor lasers

A methodology for the self-consistent analysis of carrier transport and carrier capture aspects of the dynamics of quantum cascade intersubband semiconductor lasers is described in this paper. The approach is used to analyze two prototype quantum cascade lasers. The self-consistent analysis incorporates the calculation of the electron densities and temperatures in each subband, together with the intersubband relaxation time. In the calculation of the relaxation time, we take into account the electron interaction with polar optical and acoustic phonons, as well as electron degeneracy. In addition, we also calculate the capture time, considering backward processes that play a role in the electron transition from an injection into an active region. The calculations indicate intersubband relaxation times of order 1 ps and capture times of order 100 f

Electric‐field dependence of interband transitions in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum wells by room‐temperature electrotransmittance

Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic transitions in a 250‐Å‐thick In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single‐quantum‐well system as a function of an externally applied electric field. Parity forbidden transitions, involving conduction‐band states with quantum numbers up to n=5, which become more pronounced at high electric fields were observed. The ground‐state and the forbidden transitions showed a significant red shift due to the quantum confined Stark effect. A comparison with previously reported results on thinner InGaAs/InAlAs quantum wells indicated that the wide‐well sample exhibits the largest shift, as expected from theory. Despite the appreciable Stark shift, the rather large, field‐induced linewidth broadening and the relatively low electric field at which the ground‐state exciton is ionized poses limitations on using this wide‐quantum‐well system for electro‐optic applications

Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption

The design of ZnCdSe–ZnMnSe-based quantum wells is considered, in order to obtain a large shift of the peak absorption wavelength in the far infrared range, due to a giant Zeeman splitting with magnetic field, while maintaining a reasonably large value of peak absorption. A triple quantum-well structure with a suitable choice of parameters has been found to satisfy such requirements. A maximal tuning range between 14.6 and 34.7 meV is obtained, when the magnetic field varies from zero to 5 T, so the wavelength of the absorbed radiation decreases from 85.2 to 35.7 μm with absorption up to 1.25% at low temperatures. These structures might form the basis for magnetic field tunable photodetectors and quantum cascade lasers in the terahertz range

Second harmonic generation at the quantum-interference induced transparency in semiconductor quantum wells: The influence of permanent dipole moments

The influence of permanent dipole moments of quantized states on intersubband second harmonic generation based on quantum-interference induced transparency in semiconductor quantum wells is explored using the harmonic balance method. The permanent moments are found to be quite important: they affect the transparency condition, especially at larger pump intensities. Hence, both the conversion efficiency and the optimal interaction path length change significantly when accounting for the permanent moments, and the conversion efficiency is reduced