Metodologia Per la Caratterizzazione di amplificatori a basso rumore per UMTS

In questo lavoro si presenta una metodologia di progettazione elettronica a livello di sistema, affrontando il problema della caratterizzazione dello spazio di progetto dell' amplificatore a basso rumore costituente il primo stadio di un front end a conversione diretta per UMTS realizzato in tecnologia CMOS con lunghezza di canale .18u. La metodologia è sviluppata al fine di valutare in modo quantititativo le specifiche ottime di sistema per il front-end stesso e si basa sul concetto di Piattaforma Analogica, che prevede la costruzione di un modello di prestazioni per il blocco analogico basato su campionamento statistico di indici di prestazioni del blocco stesso, misurati tramite simulazione di dimensionamenti dei componenti attivi e passivi soddisfacenti un set di equazioni specifico della topologia circuitale. Gli indici di prestazioni vengono successivamente ulizzati per parametrizzare modelli comportamentali utilizzati nelle fasi di ottimizzazione a livello di sistema. Modelli comportamentali atti a rappresentare i sistemi RF sono stati pertanto studiati per ottimizzare la scelta delle metriche di prestazioni. L'ottimizzazione dei set di equazioni atti a selezionare le configurazione di interesse per il campionamento ha al tempo stesso richiesto l'approfondimento dei modelli di dispositivi attivi validi in tutte le regioni di funzionamento, e lo studio dettagliato della progettazione degli amplificatori a basso rumore basati su degenerazione induttiva. Inoltre, il problema della modellizzazione a livello di sistema degli effetti della comunicazione tra LNA e Mixer è stato affrontato proponendo e analizzando diverse soluzioni. Il lavoro ha permesso di condurre un'ottimizzazione del front-end UMTS, giungendo a specifiche ottime a livello di sistema per l'amplificatore stesso

CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit

This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper proposes a synthesis approach for PWL dynamic systems, based on state-variable methods, and identifies the associated analog operators. The GmC approach, combining quasi-linear VCCS's, PWL VCCS's, and capacitors is then explored regarding the implementation of these operators. CMOS basic building blocks for the realization of the quasi-linear VCCS's and PWL VCCS's are presented and applied to design a Chua's circuit IC. The influence of GmC parasitics on the performance of dynamic PWL systems is illustrated through this example. Measured chaotic attractors from a Chua's circuit prototype are given. The prototype has been fabricated in a 2.4- mu m double-poly n-well CMOS technology, and occupies 0.35 mm/sup 2/, with a power consumption of 1.6 mW for a +or-2.5-V symmetric supply. Measurements show bifurcation toward a double-scroll Chua's attractor by changing a bias current

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors

CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a Correlated Double Sampling readout. It reveals new noise sources which become the major contributors. This paper presents noise measurements on low-noise CMOS image sensor. Image sensor noise is analyzed and optimization is done in order to reach an input referred noise of 1 electron rms by column gain amplifier insertion and dark current noise optimization. Pixel array noise histograms are analyzed to determine noise impact of dark current and column gain amplifier insertion. Transfer noise impact, due to the use of pinned photodiode (4T photodiode), is also measured and analyzed by a specific readout sequence

A 0.35 μm CMOS 17-bit@40-kS/s cascade 2-1 ΣΔ modulator with programmable gain and programmable chopper stabilization

This paper describes a 0.35μm CMOS chopper-stabilized Switched-Capacitor 2-1 cascade ΣDelta; modulator for automotive sensor interfaces. For a better fitting to the characteristics of different sensor outputs, the modulator includes a programmable set of gains (x0.5, x1, x2, and x4) and a programmable set of chopper frequencies (fs/16, fs/8, fs/4 and fs/2). It has also been designed to operate within the restrictive environmental conditions of automotive electronics (-40°C, 175°C). The modulator architecture has been selected after an exhaustive comparison among multiple ΣΔM topologies in terms of resolution, speed and power dissipation. The design of the modulator building blocks is based upon a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12MHz and consumes, all together, 14.7mW from a single 3.3-V supply. Experimental measurements result in 99.77dB of Dynamic Range (DR), which combined with the gain programmability leads to an overall DR of 112dB. This puts the presented design beyond the state-of-the-art according with the existing bibliography

Low-Power, High-Speed Transceivers for Network-on-Chip Communication

Networks on chips (NoCs) are becoming popular as they provide a solution for the interconnection problems on large integrated circuits (ICs). But even in a NoC, link-power can become unacceptably high and data rates are limited when conventional data transceivers are used. In this paper, we present a low-power, high-speed source-synchronous link transceiver which enables a factor 3.3 reduction in link power together with an 80% increase in data-rate. A low-swing capacitive pre-emphasis transmitter in combination with a double-tail sense-amplifier enable speeds in excess of 9 Gb/s over a 2 mm twisted differential interconnect, while consuming only 130 fJ/transition without the need for an additional supply. Multiple transceivers can be connected back-to-back to create a source-synchronous transceiver-chain with a wave-pipelined clock, operating with 6sigma offset reliability at 5 Gb/s

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems

In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and -6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as -37.21 and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between -6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm(2) on Si substrate, including DC, digital and RF pads

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

The PreAmplifier ShAper for the ALICE TPC-Detector

In this paper the PreAmplifier ShAper (PASA) for the Time Projection Chamber (TPC) of the ALICE experiment at LHC is presented. The ALICE TPC PASA is an ASIC that integrates 16 identical channels, each consisting of Charge Sensitive Amplifiers (CSA) followed by a Pole-Zero network, self-adaptive bias network, two second-order bridged-T filters, two non-inverting level shifters and a start-up circuit. The circuit is optimized for a detector capacitance of 18-25 pF. For an input capacitance of 25 pF, the PASA features a conversion gain of 12.74 mV/fC, a peaking time of 160 ns, a FWHM of 190 ns, a power consumption of 11.65 mW/ch and an equivalent noise charge of 244e + 17e/pF. The circuit recovers smoothly to the baseline in about 600 ns. An integral non-linearity of 0.19% with an output swing of about 2.1 V is also achieved. The total area of the chip is 18 mm$^2$ and is implemented in AMS's C35B3C1 0.35 micron CMOS technology. Detailed characterization test were performed on about 48000 PASA circuits before mounting them on the ALICE TPC front-end cards. After more than two years of operation of the ALICE TPC with p-p and Pb-Pb collisions, the PASA has demonstrated to fulfill all requirements