506 research outputs found

    Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review

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    The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER

    Via-configurable transistors array: a regular design technique to improve ICs yield

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    Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our proposal is a new regular layout design technique called Via-Configurable Transistors Array (VCTA) that pushes to the limit circuit layout regularity for devices and interconnects in order to maximize regularity benefits. VCTA is predicted to perform worse than the Standard Cell approach designs for a certain technology node but it will allow the use of a future technology on an earlier time. Our objective is to optimize VCTA for it to be comparable to the Standard Cell design in an older technology. Simulations for the first unoptimized version of our VCTA of delay and energy consumption for a Full Adder circuit in the 90 nm technology node are presented and also the extrapolation for Carry-Ripple Adders from 4 bits to 64 bits.Peer ReviewedPostprint (published version

    FOCSI: A new layout regularity metric

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    Technical ReportDigital CMOS Integrated Circuits (ICs) suffer from serious layout features printability issues associated to the lithography manufacturing process. Regular layout designs are emerging as alternative solutions to reduce these ICs systematic subwavelength lithography failures. However, there is no metric to evaluate and compare the layout regularity of those regular designs. In this paper we propose a new layout regularity metric called Fixed Origin Corner Square Inspection (FOCSI). FOCSI allows the comparison and quantification of designs in terms of regularity and for any given degree of granularity. When FOCSI is oriented to the evaluation of regularity while applying Lithography Enhancement Techniques, it comprehends layout layers measurements considering the optical interaction length and combines them to obtain the complete layout regularity measure. Examples are provided for 32-bit adders in the 90 nm technology node for the Standard Cell approach and for Via-Configurable Transistor Array regular designs. We show how layouts can be sorted accurately even if their degree of regularity is similar.Preprin

    Regular Fabric Design with Ambipolar CNTFETs for FPGA and Structured ASIC Applications

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    In this paper, we propose for the first time the application of ambipolar CNTFETs with in-field controllable polarities to design regular fabrics with static logic. We exploit the high expressive power provided by complementary static logic built with ambipolar CNTFETs to design compact and efficient configurable gates. After evaluating a polarity-aware logic design for the configurable gates, we selected a number of gates with an And-Or-Inverter structure and produced a first comparison with existent medium-grained logic blocks, like the Actel ACT1 and 4-input LUTs [1]. Preliminary evaluation of our gates indicates improvements of around 47% over the ACT1 and of about 18× with respect to 4-input LUTs in terms of area×normalized delay

    On Regularity and Integrated DFM Metrics

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    Transistor geometries are well into the nanometer regime, keeping with Moore's Law. With this scaling in geometry, problems not significant in the larger geometries have come to the fore. These problems, collectively termed variability, stem from second-order effects due to the small geometries themselves and engineering limitations in creating the small geometries. The engineering obstacles have a few solutions which are yet to be widely adopted due to cost limitations in deploying them. Addressing and mitigating variability due to second-order effects comes largely under the purview of device engineers and to a smaller extent, design practices. Passive layout measures that ease these manufacturing limitations by regularizing the different layout pitches have been explored in the past. However, the question of the best design practice to combat systematic variations is still open. In this work we explore considerations for the regular layout of the exclusive-OR gate, the half-adder and full-adder cells implemented with varying degrees of regularity. Tradeoffs like complete interconnect unidirectionality, and the inevitable introduction of vias are qualitatively analyzed and some factors affecting the analysis are presented. Finally, results from the Calibre Critical Feature Analysis (CFA) of the cells are used to evaluate the qualitative analysis

    Reconfiguration of field programmable logic in embedded systems

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    A Survey on Reconfigurable System-on-Chips

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    The requirements for high performance and low power consumption are becoming more and more inevitable when designing modern embedded systems, especially for the next generation multi-mode multimedia or communication standards. Ultra large-scale integration reconfigurable System-on-Chips (SoCs) have been proposed to achieve not only better performance and lower energy consumption but also higher flexibility and versatility in comparison with the conventional architectures. The unique characteristic of such systems is integration of many types of heterogeneous reconfigurable processing fabrics based on a Network-on-Chip. This paper analyzes and emphasizes the key research trends of the reconfigurable System-on-Chips (SoCs). Firstly, the emerging hardware architecture of SoCs is highlighted. Afterwards, the key issues of designing the reconfigurable SoCs are discussed, with the focus on the challenges when designing reconfigurable hardware fabrics and reconfigurable Network-on-Chips. Finally, some state-of-the-art reconfigurable SoCs are briefly discussed

    Polarity Control at Runtime:from Circuit Concept to Device Fabrication

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    Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to overcome physical limitations affecting conventional CMOS technology. Here, we propose a novel Schottky barrier device concept based on electrostatic polarity control. Specifically, this device can behave as p- or n-type by simply changing an electric input bias. This device combines More-than-Moore and Beyond CMOS elements to create an efficient technology with a viable path to Very Large Scale Integration (VLSI). This thesis proposes a device/circuit/architecture co-optimization methodology, where aspects of device technology to logic circuit and system design are considered. At device level, a full CMOS compatible fabrication process is presented. In particular, devices are demonstrated using vertically stacked, top-down fabricated silicon nanowires with gate-all-around electrode geometry. Source and drain contacts are implemented using nickel silicide to provide quasi-symmetric conduction of either electrons or holes, depending on the mode of operation. Electrical measurements confirm excellent performance, showing Ion/Ioff > 10^7 and subthreshold slopes approaching the thermal limit, SS ~ 60mV/dec (~ 63mV/dec) for n(p)-type operation in the same physical device. Moreover, the shown devices behave as p-type for a polarization bias (polarity gate voltage, Vpg) of 0V, and n-type for a Vpg = 1V, confirming their compatibility with multi-level static logic circuit design. At logic gate level, two- and four-transistor logic gates are fabricated and tested. In particular, the first fully functional, two-transistor XOR logic gate is demonstrated through electrical characterization, confirming that polarity control can enable more compact logic gate design with respect to conventional CMOS. Furthermore, we show for the first time fabricated four- transistors logic gates that can be reconfigured as NAND or XOR only depending on their external connectivity. In this case, logic gates with full swing output range are experimentally demonstrated. Finally, single device and mixed-mode TCAD simulation results show that lower Vth and more optimized polarization ranges can be expected in scaled devices implementing strain or high-k technologies. At circuit and system level, a full semi-custom logic circuit design tool flow was defined and configured. Using this flow, novel logic libraries based on standard cells or regular gate fabrics were compared with standard CMOS. In this respect, results were shown in comparison to CMOS, including a 40% normalized area-delay product reduction for the analyzed standard cell libraries, and improvements of over 2× in terms of normalized delay for regular Controlled Polarity (CP)-based cells in the context of Structured ASICs. These results, in turn, confirm the interest in further developing and optimizing CP devices, as promising candidates for future digital circuit technology

    High-radix Packet-Switching Architecture for Data Center Networks

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    We propose a highly scalable packet-switching architecture that suits for demanding Data center Networks (DCNs). The design falls into the category of buffered multistage switches. It affiliates a three-stage Clos-network and the Networks-on-Chip (NoC) paradigm. We also suggest a congestion-aware routing algorithm that shares the traffic load among the switch's central modules via interleaved connecting links. Unlike conventional switches, the current proposal provides better path diversity, simple scheduling, speedup and robustness to load variation. Simulation results show that the switch is scalable with the portcount and traffic fluctuation, and that it outperforms different switches under many traffic patterns
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