Design of PVT Tolerant Inverter Based Circuits for Low Supply Voltages

University of Minnesota Ph.D. dissertation. June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xiv, 187 pages.Rapid advances in the field of integrated circuit design has been advantageous from the point of view of cost and miniaturization. Although technology scaling is advantageous to digital circuits in terms of increased speed and lower power, analog circuits strongly suffer from this trend. This is becoming a crucial bottle neck in the realization of a system on chip in scaled technology merging high-density digital parts, with high performance analog interfaces. This is because scaled technologies reduce the output impedance (gain) and supply voltage which limits the dynamic range (output swing). One way to mitigate the power supply restrictions is to move to current mode circuit circuit design rather than voltage mode designs. This thesis focuses on designing Process Voltage and Temperature (PVT) tolerant base band circuits at lower supply voltages and in lower technologies. Inverter amplifiers are known to have better transconductance efficiency, better noise and linearity performance. But inverters are prone to PVT variations and has poor CMRR and PSRR. To circumvent the problem, we have proposed various biasing schemes for inverter like semi constant current biasing, constant current biasing and constant gm biasing. Each biasing technique has its own advantages, like semi constant current biasing allows to select different PMOS and NMOS current. This feature allows for higher inherent inverter linearity. Similarly constant current and constant gm biasing allows for reduced PVT sensitivity. The inverter based OTA achieves a measured THD of -90.6 dB, SNR of 78.7 dB, CMRR 97dB, PSRR 61 dB wile operating from a nominal power of 0.9V and at output swing of 0.9V{pp,diff} in TSMC 40nm general purpose process. Further the measured third harmonic distortion varies approximately by 11.5dB with 120C variation in temperature and 9dB with a 18% variation in supply voltage. The linearity can be increased by increasing the loop gain and bandwidth in a negative feedback circuit or by increasing the over drive voltage in open loop architectures. However both these techniques increases the noise contribution of the circuit. There exist a trade off between noise and linearity in analog circuits. To circumvent this problem, we have introduced nonlinear cancellation techniques and noise filtering techniques. An analog-to-digital converter (ADC) driver which is capable of amplifying the continuous time signal with a gain of 8 and sample onto the input capacitor(1pF) of 1 10 bit successive approximation register (SAR) ADC is designed in TSMC 65nm general purpose process. This exploits the non linearity cancellation in current mirror and also allows for higher bandwidth operation by decoupling closed loop gain from the negative feedback loop. The noise from the out of band is filtered before sampling leading to low noise operation. The measured design operates at 100MS/s and has an OIP_3 of 40dBm at the nyquist rate, noise power spectral density of 17nV/sqrt{Hz} and inter modulation distortion of 65dB. The intermodulation distortion variation across 10 chips is 6dB and 4dB across a temperature variation of 120C. Non linearity cancellation is exploited in designing two filters, an anti alias filter and a continuously tunable channel select filter. Traditional active RC filters are based on cascade of integrators. These create multiple low impedance nodes in the circuit which results in a higher noise. We propose a real low pass filter based filter architecture rather than traditional integrator based approach. Further the entire filtering operation takes place in current domain to circumvent the power supply limitations. This also facilitates the use of tunable non linear metal oxide semiconductor capacitor (MOSCAP) as filter capacitors. We introduce techniques of self compensation to use the filter resistor and capacitor as compensation capacitor for lower power. The anti alias filter designed for 50MHz bandwidth is fabricated in IBM 65nm process achieves an IIP3 of 33dBm, while consuming 1.56mW from 1.2 V supply. The channel select filter is tunable from 34MHz to 314MHz and is fabricated in TSMC 65nm general purpose process. This filter achieves an OIP3 of 25.24 dBm at the maximum frequency while drawing 4.2mA from 1.1V supply. The measured intermodulation distortion varies by 5dB across 120C variation in temperature and 6.5dB across a 200mV variation in power supply. Further this filter presents a high impedance node at the input and a low impedance node at the output easing system integration. SAR ADCs are becoming popular at lower technologies as they are based on device switching rather than amplifying circuits. But recent SAR ADCs that have good energy efficiency have had relatively large input capacitance increasing the driver power. We present a 2X time interleaved (TI) SAR ADC which has the lowest input capacitance of 133fF in literature. The sampling capacitor is separated from the capacitive digital to analog converter (DAC) array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in charge domain. The proposed ADC is fabricated in TSMC's 65nm general purpose process and occupies an area of 0.0338 mm^2. The measured ADC spurious free dynamic range (SFDR) is 57dB and the measured effective number of bits (ENOB) at nyquist rate is 7.55 bit while using 1.55mW power from 1 V supply. A sub 1V reference circuit is proposed, that exploits the complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Chopper stabilization is employed to reduce the flicker noise of the reference circuit. The prototype was simulated in TSMC 65nm process and we obtain the nominal output of 236mW, while consuming 0.7mW from power supply. Simulations show a temperature coefficient of 18 ppmC from -40 to 100C and with a power supply ranging from 0.8 to 2V

LOW-VOLTAGE LOW-POWER ANALOG-TO-DIGITAL CONVERTERS

Ph.DDOCTOR OF PHILOSOPH

Design of a 125 mhz tunable continuous-time bandpass modulator for wireless IF applications

Bandpass sigma-delta modulators combine oversampling and noise shaping to get very high resolution in a limited bandwidth. They are widely used in applications that require narrowband high-resolution conversion at high frequencies. In recent years interests have been seen in wireless system and software radio using sigma-delta modulators to digitize signals near the front end of radio receivers. Such applications necessitate clocking the modulators at a high frequency (MHz or above). Therefore a loop filter is required in continuous-time circuits (e.g., using transconductors and integrators) rather than discretetime circuits (e.g., using switched capacitors) where the maximum clocking rate is limited by the bandwidth of Opamp, switchÂs speed and settling-time of the circuitry. In this work, the design of a CMOS fourth-order bandpass sigma-delta modulator clocking at 500 MHz for direct conversion of narrowband signals at 125 MHz is presented. A new calibration scheme is proposed for the best signal-to-noise-distortion-ratio (SNDR) of the modulator. The continuous-time loop filter is based on Gm-C resonators. A novel transconductance amplifier has been developed with high linearity at high frequency. Qfactor of filter is enhanced by tunable negative impedance which cancels the finite output impendence of OTA. The fourth-order modulator is implemented using 0.35 mm triplemetal standard analog CMOS technology. Postlayout simulation in CADENCE demonstrates that the modulator achieves a SNDR of 50 dB (~8 bit) performance over a 1 MHz bandwidth. The modulatorÂs power consumption is 302 mW from supply power of ± 1.65V

Re-thinking Analog Integrated Circuits in Digital Terms: A New Design Concept for the IoT Era

A steady trend towards the design of mostly-digital and digital-friendly analog circuits, suitable to integration in mainstream nanoscale CMOS by a highly automated design flow, has been observed in the last years to address the requirements of the emerging Internet of Things (IoT) applications. In this context, this tutorial brief presents an overview of concepts and design methodologies that emerged in the last decade, aimed to the implementation of analog circuits like Operational Transconductance Amplifiers, Voltage References and Data Converters by digital circuits. The current design challenges and application scenarios as well as the future perspectives and opportunities in the field of digital-based analog processing are finally discussed

Design of Highly Efficient Analog-To-Digital Converters

The demand of higher data rates in communication systems is reflected in the constant evolution of communication standards. LTE-A and WiFi 802.11ac promote the use of carrier aggregation to increase the data rate of a wireless receiver. Recent DTV receivers promote the concept of full band capture to avoid the implementation of complex analog operations such as: filtering, equalization, modulation/demodulation, etc. All these operations can be implemented in a robust manner in the digital domain. Analog-to-Digital Converters (ADCs) are located at the heart of such architectures and require to have larger bandwidths and higher dynamic ranges. However, at higher data rates the power efficiency of ADCs tends to degrade. Moreover, while the scale of channel length in CMOS devices directly benefits the power, speed and area of digital circuits, analog circuits suffer from lower intrinsic gain and higher device mismatch. Thus, it has been difficult to design high-speed ADCs with low-power operation using traditional architectures without relying on increasingly complex digital calibration algorithms. This research presents three ADCs that introduce novel architectures to relax the specifications of the analog circuits and reduce the complexity of the digital calibration algorithms. A low-pass sigma delta ADC with 15 MHz of bandwidth is introduced. The system uses a low-power 7-bit quantizer from which the four most significant bits are used for the operation of the sigma delta ADC. The remaining three least significant bits are used for the realization of a frequency domain algorithm for quantization noise improvement. The prototype was implemented in 130 nm CMOS technology. For this prototype, the use of the 7-bit quantizer and algorithm improved the SNDR from 69 dB to 75 dB. The obtained FoM was 145 fJ/conversion-step. In a second project, the problem of high power consumption demanded from closed loop operational amplifiers operating at Giga hertz frequency is addressed. Especially the dependency of the power consumption to the closed loop gain. This project presents a low-pass sigma delta ADC with 75 MHz bandwidth. The traditional summing amplifier used for excess loop compensation delay is substituted by a summing amplifier with current buffer that decouples the power consumption dependency with the closed loop gain. The prototype was designed in 40 nm CMOS technology achieving 64.9 dB peak SNDR. The operating frequency was 3.2 GHz, the total power consumption was 22 mW and FoM of 106 fJ/conversion-step. In a third project, the same approach of decoupling the power consumption requirements from the closed loop gain is applied to a pipelined ADC. The traditional capacitive multiplying DAC used in the residual amplifier is substituted by a current mode DAC and a transimpedance amplifier. The prototype was implemented in 40 nm CMOS technology achieving 58 dB peak SNDR and 76 dB SFDR with 200 MHz sampling frequency. The ADC consumes 8.4 mW with a FoM of 64 fJ/Conversion-step