Barrel Shifter Physical Unclonable Function Based Encryption

Physical Unclonable Functions (PUFs) are circuits designed to extract physical randomness from the underlying circuit. This randomness depends on the manufacturing process. It differs for each device enabling chip-level authentication and key generation applications. We present a protocol utilizing a PUF for secure data transmission. Parties each have a PUF used for encryption and decryption; this is facilitated by constraining the PUF to be commutative. This framework is evaluated with a primitive permutation network - a barrel shifter. Physical randomness is derived from the delay of different shift paths. Barrel shifter (BS) PUF captures the delay of different shift paths. This delay is entangled with message bits before they are sent across an insecure channel. BS-PUF is implemented using transmission gates; their characteristics ensure same-chip reproducibility, a necessary property of PUFs. Post-layout simulations of a common centroid layout 8-level barrel shifter in 0.13 {\mu}m technology assess uniqueness, stability and randomness properties. BS-PUFs pass all selected NIST statistical randomness tests. Stability similar to Ring Oscillator (RO) PUFs under environment variation is shown. Logistic regression of 100,000 plaintext-ciphertext pairs (PCPs) failed to successfully model BS- PUF behavior

Power Optimization of Combinational Quaternary Logic Circuits

Design of the binary logic circuits is restricted by the need of the interconnections. Interconnections increase delay, area and energy consumption in CMOS digital circuits. A possible solution could be here at by using a bigger set of signals over the same chip area. Multiple-valued logic can decrease the average power required for level transitions and reduces the number of necessary interconnections. In this paper we design various combinational circuits using quaternary logic. Various combinational circuit such as multi valued logic full adder using unique encoding technique, quaternary encoder and quaternary multiplexer. This design is target to reduce the transistor used to implement the circuit and dropping the power dissipation. Power optimization is achieved using MTCMOS technique. Simulation has been done in Tanner 13 EDA tool on BSIM3 180 nm CMOS Technology. DOI: 10.17762/ijritcc2321-8169.15026

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Circuit-level modelling and simulation of carbon nanotube devices

The growing academic interest in carbon nanotubes (CNTs) as a promising novel class of electronic materials has led to significant progress in the understanding of CNT physics including ballistic and non-ballistic electron transport characteristics. Together with the increasing amount of theoretical analysis and experimental studies into the properties of CNT transistors, the need for corresponding modelling techniques has also grown rapidly. This research is focused on the electron transport characteristics of CNT transistors, with the aim to develop efficient techniquesto model and simulate CNT devices for logic circuit analysis.The contributions of this research can be summarised as follows. Firstly, to accelerate the evaluation of the equations that model a CNT transistor, while maintaining high modelling accuracy, three efficient numerical techniques based on piece-wise linear, quadratic polynomial and cubic spline approximation have been developed. The numerical approximation simplifies the solution of the CNT transistor’s self-consistent voltage such that the calculation of the drain-source current is accelerated by at least two orders of magnitude. The numerical approach eliminates complicated calculations in the modelling process and facilitates the development of fast and efficient CNT transistor models for circuit simulation.Secondly, non-ballistic CNT transistors have been considered, and extended circuit-level models which can capture both ballistic and non-ballistic electron transport phenomena, including elastic scattering, phonon scattering, strain and tunnelling effects, have been developed. A salient feature of the developed models is their ability to incorporate both ballistic and non-ballistic transport mechanisms without a significant computational cost. The developed models have been extensively validated against reported transport theories of CNT transistors and experimental results.Thirdly, the proposed carbon nanotube transistor models have been implemented on several platforms. The underlying algorithms have been developed and tested in MATLAB, behaviourallevel models in VHDL-AMS, and improved circuit-level models have been implemented in two versions of the SPICE simulator. As the final contribution of this work, parameter variation analysis has been carried out in SPICE3 to study the performance of the proposed circuit-level CNT transistor models in logic circuit analysis. Typical circuits, including inverters and adders, have been analysed to determine the dependence of the circuit’s correct operation on CNT parameter variation