2,168 research outputs found

    Energy Detection UWB Receiver Design using a Multi-resolution VHDL-AMS Description

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    Ultra Wide Band (UWB) impulse radio systems are appealing for location-aware applications. There is a growing interest in the design of UWB transceivers with reduced complexity and power consumption. Non-coherent approaches for the design of the receiver based on energy detection schemes seem suitable to this aim and have been adopted in the project the preliminary results of which are reported in this paper. The objective is the design of a UWB receiver with a top-down methodology, starting from Matlab-like models and refining the description down to the final transistor level. This goal will be achieved with an integrated use of VHDL for the digital blocks and VHDL-AMS for the mixed-signal and analog circuits. Coherent results are obtained using VHDL-AMS and Matlab. However, the CPU time cost strongly depends on the description used in the VHDL-AMS models. In order to show the functionality of the UWB architecture, the receiver most critical functions are simulated showing results in good agreement with the expectations

    A Multi-objective Simulation Based Tool: Application to the Design of High Performance LC-VCOs

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    Part 16: Optimization Techniques in EnergyInternational audienceThe continuing size reduction of electronic devices imposes design challenges to optimize the performances of modern electronic systems, such as: wireless services, telecom and mobile computing. Fortunately, those design challenges can be overcome thanks to the development of Electronic Design Automation (EDA) tools. In the analog, mixed signal and radio-frequency (AMS/RF) domains, circuit optimization tools have demonstrated their usefulness in addressing design problems taking into account downscaling technological aspects. Recent advances in EDA have shown that the simulation-based sizing technique is a very interesting solution to the ‘complex’ modelling task in the circuit design optimization problem. In this paper we propose a multi-objective simulation-based optimization tool. A CMOS LC-VCO circuit is presented to show the viability of this tool. The tool is used to generate the Pareto front linking two conflicting objectives, namely the VCO Phase Noise and Power Consumption. The accuracy of the results is checked against HSPICE/RF simulations

    Methoden und Beschreibungssprachen zur Modellierung und Verifikation vonSchaltungen und Systemen: MBMV 2015 - Tagungsband, Chemnitz, 03. - 04. MĂ€rz 2015

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    Der Workshop Methoden und Beschreibungssprachen zur Modellierung und Verifikation von Schaltungen und Systemen (MBMV 2015) findet nun schon zum 18. mal statt. Ausrichter sind in diesem Jahr die Professur Schaltkreis- und Systementwurf der Technischen UniversitĂ€t Chemnitz und das Steinbeis-Forschungszentrum Systementwurf und Test. Der Workshop hat es sich zum Ziel gesetzt, neueste Trends, Ergebnisse und aktuelle Probleme auf dem Gebiet der Methoden zur Modellierung und Verifikation sowie der Beschreibungssprachen digitaler, analoger und Mixed-Signal-Schaltungen zu diskutieren. Er soll somit ein Forum zum Ideenaustausch sein. Weiterhin bietet der Workshop eine Plattform fĂŒr den Austausch zwischen Forschung und Industrie sowie zur Pflege bestehender und zur KnĂŒpfung neuer Kontakte. Jungen Wissenschaftlern erlaubt er, ihre Ideen und AnsĂ€tze einem breiten Publikum aus Wissenschaft und Wirtschaft zu prĂ€sentieren und im Rahmen der Veranstaltung auch fundiert zu diskutieren. Sein langjĂ€hriges Bestehen hat ihn zu einer festen GrĂ¶ĂŸe in vielen Veranstaltungskalendern gemacht. Traditionell sind auch die Treffen der ITGFachgruppen an den Workshop angegliedert. In diesem Jahr nutzen zwei im Rahmen der InnoProfile-Transfer-Initiative durch das Bundesministerium fĂŒr Bildung und Forschung geförderte Projekte den Workshop, um in zwei eigenen Tracks ihre Forschungsergebnisse einem breiten Publikum zu prĂ€sentieren. Vertreter der Projekte Generische Plattform fĂŒr SystemzuverlĂ€ssigkeit und Verifikation (GPZV) und GINKO - Generische Infrastruktur zur nahtlosen energetischen Kopplung von Elektrofahrzeugen stellen Teile ihrer gegenwĂ€rtigen Arbeiten vor. Dies bereichert denWorkshop durch zusĂ€tzliche Themenschwerpunkte und bietet eine wertvolle ErgĂ€nzung zu den BeitrĂ€gen der Autoren. [... aus dem Vorwort

    Fiabilisation de convertisseurs analogique-numérique à modulation Sigma-Delta

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    This thesis concentrates on reliability-aware methodology development, reliability analysis based on simulation as well as failure prediction of CMOS 65nm analog and mixed signal (AMS) ICs. Sigma-Delta modulators are concerned as the object of reliability study at system level. A hierarchical statistical approach for reliability is proposed to analysis the performance of Sigma-Delta modulators under ageing effects and process variations. Statistical methods are combined into this analysis flow.Ce travail de thÚse a porté sur des problÚmes de fiabilité de circuits intégrés en technologie CMOS 65 nm, en particulier sur la conception en vue de la fiabilité, la simulation et l'amélioration de la fiabilité. Les mécanismes dominants de vieillissement HCI et NBTI ainsi que la variation du processus ont été étudiés et évalués quantitativement au niveau du circuit et au niveau du systÚme. Ces méthodes ont été appliquées aux modulateurs Sigma-Delta afin de déterminer la fiabilité de ce type de composant qui est trÚs utilisé

    Fiabilisation de Convertisseurs Analogique-NumÂŽerique a Modulation Sigma-Delta

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    Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit®e des ICs est d®efinie ainsi : la capacit®e d’un circuit ou un syst`eme int®egr®e `amaintenir ses param`etres durant une p®eriode donn®ee sous des conditions d®efinies. Les rapportsITRS 2011 consid`ere la fiabilit®e comme un aspect critique du processus d’int®egration.Par cons®equent, il faut faire appel des m®ethodologies innovatrices prenant en comptela fiabilit®e afin d’assurer la fonctionnalit®e du SoCs et la fiabilit®e dans les technologiesCMOS `a l’®echelle nanom®etrique. Cela nous permettra de d®evelopper des m®ethodologiesind®ependantes du design et de la technologie CMOS, en revanche, sp®ecialis®ees en fiabilit®e

    Thermal profiling in CMOS/memristor hybrid architectures

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    CMOS/memristor hybrid architectures combine conventional CMOS processing elements with thin-film memristor-based crossbar circuits for high-density reconfigurable systems. These architectures have received an explosive growth in research over the past few years due to the first practical demonstration of a thin-film memristor in 2008. The reliability and lifetimes of both the CMOS and memristor partitions of these architectures are severely affected by temperature variations across the chip. Therefore, it is expected that dynamic thermal management (DTM) mechanisms will be needed to improve their reliability and lifetime. This thesis explores one aspect of DTM--thermal profiling--in a CMOS/memristor memory architecture. A temperature sensing resistive random access memory (TSRRAM) was designed. Temperature information is extracted from the TSRRAM by measuring the write time of thin-film memristors. Active and passive sensing mechanisms are also introduced as means for DTM algorithms to determine the thermal profile of the chip. Crosstherm, a simulation framework, was developed to analyze the effects of temperature variations in CMOS/memristor architectures. The TSRRAM design was simulated using the Crosstherm framework for four CMOS processor benchmarks. Passive sensing produced a mean absolute sensor error across all benchmarks of 2.14 K. The size of the DTM unit\u27s memory was also shown to have a significant impact on the accuracy of extracted thermal data during passive sensing. Active sensing was also demonstrated to show the effect of dynamic adjustment of sensor resolution on the accuracy of hotspot temperature estimations
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