Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes

Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress. Indeed the current flow induce local heating and then mechanical stress. This paper deals with electro thermal stress under steady and transient current states. The main objective is to test bonded wires with active current cycle. Consequently, the thermo mechanical stress is obtained. A numerical 3D finite element model is presented and some experimental results are given. Indeed an infrared system monitors the temperature dispatching from an experimental test bench under active current cycle. The overall study is a first step before a global simulation (electrical thermal-mechanical) in order to optimize some geometric parameters of the packaging

Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages

In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Saxony's capital Dresden: On the way to become Eastern Germany's first Innovative Milieu?

In this paper, the chances of Saxonys capital city Dresden to become Eastern Germanys first high-tech-region is discussed. A presentation of the theoretical background of innovative milieux is followed by an overview of the regions universities, R&D institutes and other facilities relevant for milieu formation. Afterwards, the establishment of high-tech enterprises in the Dresden area is analyzed. The paper concludes giving a view of the regions further development potential. --

Enhancement of polar phases in PVDF by forming PVDF/SiC nanowire composite

Different contents of silicon carbide (SiC) nanowires were mixed with Poly(vinylidene fluoride) (PVDF) to facilitate the polar phase crystallization. It was shown that the annealing temperature and SiC content affected on the phase and crystalline structures of PVDF/SiC samples. Furthermore, the addition of SiC nanowire enhanced the transformation of non-polar α phase to polar phases and increased the relative fraction of β phase in PVDF. Due to the nucleating agent mechanism of SiC nanowires, the ion-dipole interaction between the negatively charged surface of SiC nanowires and the positive CH2 groups in PVDF facilitated the formation of polar phases in PVDF

VLSI Revisited - Revival in Japan

This paper describes the abundance of semiconductor consortia that have come into existence in Japan since the mid-1990s. They clearly reflect the ambition of the government - through its reorganized ministry METI and company initiatives - to regain some of the industrial and technological leadership that Japan has lost. The consortia landscape is very different in Japan compared with EU and the US. Outside Japan the universities play a much bigger and very important role. In Europe there has emerged close collaboration, among national government agencies, companies and the EU Commission in supporting the IT sector with considerable attention to semiconductor technologies. Another major difference, and possibly the most important one, is the fact that US and EU consortia include and mix partners from different areas of the semiconductor landscape including wafer makers, material suppliers, equipment producers and integrated device makers.semiconductors, Hitachi, Sony, Toshiba, Elpida, Renesas, Sematech, VLSI, JESSI, MEDEA, ASPLA, MIRAI, innovation system

VLSI REVISITED – REVIVAL IN JAPAN

This paper describes the abundance of semiconductor consortia that have come into existence in Japan since the mid-1990s. They clearly reflect the ambition of the government – through its reorganized ministry METI and company initiatives - to regain some of the industrial and technological leadership that Japan has lost. The consortia landscape is very different in Japan compared with EU and the US. Outside Japan the universities play a much bigger and very important role. In Europe there has emerged close collaboration, among national government agencies, companies and the EU Commission in supporting the IT sector with considerable attention to semiconductor technologies. Another major difference, and possibly the most important one, is the fact that US and EU consortia include and mix partners from different areas of the semiconductor landscape including wafer makers, material suppliers, equipment producers and integrated device makers.semiconductors; Hitachi; Sony; Toshiba; Elpida; Renesas; Sematech; VLSI; JESSI; MEDEA; ASPLA; MIRAI; innovation system