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    Memristors and more

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    Everything You Wish to Know About Memristors But Are Afraid to Ask

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    This paper classifies all memristors into three classes called Ideal, Generic, or Extended memristors. A subclass of Generic memristors is related to Ideal memristors via a one-to-one mathematical transformation, and is hence called Ideal Generic memristors. The concept of non-volatile memories is defined and clarified with illustrations. Several fundamental new concepts, including Continuum-memory memristor, POP (acronym for Power-Off Plot), DC V-I Plot, and Quasi DC V-I Plot, are rigorously defined and clarified with colorful illustrations. Among many colorful pictures the shoelace DC V-I Plot stands out as both stunning and illustrative. Even more impressive is that this bizarre shoelace plot has an exact analytical representation via 2 explicit functions of the state variable, derived by a novel parametric approach invented by the author

    Memristors for the Curious Outsiders

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    We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.Comment: Perpective paper for MDPI Technologies; 43 page

    Asymptotic behavior of memristive circuits

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    The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points of the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.Comment: 20 pages, 8 figures; proofs corrected, figures changed; results substantially unchanged; to appear in Entrop
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