Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters

We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

ポータビリティを意識したCMOSミックスドシグナルVLSI回路設計手法に関する研究

本研究は、半導体上に集積されたアナログ・ディジタル・メモリ回路から構成されるミクストシグナルシステムを別の製造プロセスへ移行することをポーティングとして定義し、効率的なポーティングを行うための設計方式と自動回路合成アルゴリズムを提案し、いくつかの典型的な回路に対する設計事例を示し、提案手法の妥当性を立証している。北九州市立大

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models

Reduction in static-power dissipation (gate leakage) by using nitrided oxides comes at the expense of enhanced negative-bias temperature instability (NBTI). Therefore, determining the nitrogen content in gate oxides that can simultaneously optimize gate-leakage and NBTI degradation is a problem of significant technological relevance. In this paper, we experimentally and theoretically analyze wide range of gate-leakage and NBTI stress data from a variety of plasma-oxynitride gate dielectric devices to establish an optimization scheme for gate-leakage and NBTI degradation. Calculating electric fields and leakage current both numerically and using simple analytical expressions, we demonstrate a design diagram for arbitrary nitrogen concentration and effective oxide thickness that may be used for process and IC design

Semi-Analytical Approach Towards Design and Optimization of Induction Machines for Electric Vehicles

Electric machine design is a comprehensive task depending on the several factors, such as material resource limitations and economic factors. Therefore, an induction machine is a promising candidate because of the absence of magnetic material in the rotor. However, the conventional design approach can neither reflect the advances of the induction machine(IM) design nor exploit the trade-offs between design factors and the multi-physics nature of the electrical machine. Therefore, proposing fast and accurate novel methods to design, develop and analyze IMs using electromagnetic field oriented approaches is competitive to the old-fashion numerical methods. To achieve improved IM design from a baseline design to an optimal design, this dissertation: (1) Investigates the challenges of the high speed IM design specified for the electric vehicle application at the rated operating condition considering electromagnetic boundaries for the reasonable saturation level within a compact volume; (2) Proposes a new design approach of IM using modified equivalent circuit parameters to reduce spatial harmonics because of slotting effect and skewing effect; and also presents the importance of the 3-D analysis over 2-D analysis while developing the IM; (3) Proposes a novel electromagnetic field oriented mathematical model considering the slotting effect and axial flux variation because of skewing rotor bars to evaluate the IM performance with a lower and precise computational effort; (4) developed baseline IM is optimized with genetic algorithm incorporated in proposed subdomain model to improve the torque-speed profile. In order to further simplify the optimization procedure, a parametric and sensitivity based design approach is implemented to reduce the design variables. To evaluate the proposed optimal IM with extended constant power region and high torque density within a compact volume using novel 3-D subdomain model, the machine has been prototyped and tested from low to high speed under no-load and loaded condition. Electrical circuit parameter variation is demonstrated and compared to the one simulated in the FEA environment. This innovation can be applied to a family of electric machines with various topologies

Electro-Thermal Codesign in Liquid Cooled 3D ICs: Pushing the Power-Performance Limits

The performance improvement of today's computer systems is usually accompanied by increased chip power consumption and system temperature. Modern CPUs dissipate an average of 70-100W power while spatial and temporal power variations result in hotspots with even higher power density (up to 300W/cm^2). The coming years will continue to witness a significant increase in CPU power dissipation due to advanced multi-core architectures and 3D integration technologies. Nowadays the problems of increased chip power density, leakage power and system temperatures have become major obstacles for further improvement in chip performance. The conventional air cooling based heat sink has been proved to be insufficient for three dimensional integrated circuits (3D-ICs). Hence better cooling solutions are necessary. Micro-fluidic cooling, which integrates micro-channel heat sinks into silicon substrates of the chip and uses liquid flow to remove heat inside the chip, is an effective active cooling scheme for 3D-ICs. While the micro-fluidic cooling provides excellent cooling to 3D-ICs, the associated overhead (cooling power consumed by the pump to inject the coolant through micro-channels) is significant. Moreover, the 3D-IC structure also imposes constraints on micro-channel locations (basically resource conflict with through-silicon-vias TSVs or other structures). In this work, we investigate optimized micro-channel configurations that address the aforementioned considerations. We develop three micro-channel structures (hotspot optimized cooling configuration, bended micro-channel and hybrid cooling network) that can provide sufficient cooling to 3D-IC with minimum cooling power overhead, while at the same time, compatible with the existing electrical structure such as TSVs. These configurations can achieve up to 70% cooling power savings compared with the configuration without any optimization. Based on these configurations, we then develop a micro-fluidic cooling based dynamic thermal management approach that maintains the chip temperature through controlling the fluid flow rate (pressure drop) through micro-channels. These cooling configurations are designed after the electrical parts, and therefore, compatible with the current standard IC design flow. Furthermore, the electrical, thermal, cooling and mechanical aspects of 3D-IC are interdependent. Hence the conventional design flow that designs the cooling configuration after electrical aspect is finished will result in inefficiencies. In order to overcome this problem, we then investigate electrical-thermal co-design methodology for 3D-ICs. Two co-design problems are explored: TSV assignment and micro-channel placement co-design, and gate sizing and fluidic cooling co-design. The experimental results show that the co-design enables a fundamental power-performance improvement over the conventional design flow which separates the electrical and cooling design. For example, the gate sizing and fluidic cooling co-design achieves 12% power savings under the same circuit timing constraint and 16% circuit speedup under the same power budget

To develop an efficient variable speed compressor motor system

This research presents a proposed new method of improving the energy efficiency of a Variable Speed Drive (VSD) for induction motors. The principles of VSD are reviewed with emphasis on the efficiency and power losses associated with the operation of the variable speed compressor motor drive, particularly at low speed operation.The efficiency of induction motor when operated at rated speed and load torque is high. However at low load operation, application of the induction motor at rated flux will cause the iron losses to increase excessively, hence its efficiency will reduce dramatically. To improve this efficiency, it is essential to obtain the flux level that minimizes the total motor losses. This technique is known as an efficiency or energy optimization control method. In practice, typical of the compressor load does not require high dynamic response, therefore improvement of the efficiency optimization control that is proposed in this research is based on scalar control model.In this research, development of a new neural network controller for efficiency optimization control is proposed. The controller is designed to generate both voltage and frequency reference signals imultaneously. To achieve a robust controller from variation of motor parameters, a real-time or on-line learning algorithm based on a second order optimization Levenberg-Marquardt is employed. The simulation of the proposed controller for variable speed compressor is presented. The results obtained clearly show that the efficiency at low speed is significant increased. Besides that the speed of the motor can be maintained. Furthermore, the controller is also robust to the motor parameters variation. The simulation results are also verified by experiment

Thermally Aware, Energy-Based Techniques for Improving Data Center Energy Efficiency

This work investigates the practical implementation of so-called thermally aware, energy optimized load placement in air-cooled, raised floor data centers to reduce the overall energy consumption, while maintaining the reliability of the IT equipment. The work takes a systematic approach to modeling the data center\u27s airflow, thermodynamic and heat transfer characteristics - beginning with simplified, physics-inspired models and eventually developing a high-fidelity, experimentally validated thermo-hydraulic model of the data center\u27s cooling and power infrastructure. The simplified analysis was able to highlight the importance of considering the trade-off between low air supply temperature and increased airflow rate, as well as the deleterious effect of temperature non-uniformity at the inlet of the racks on the data center\u27s cooling infrastructure power consumption. The analysis enabled the development of a novel approach to reducing the energy consumption in enclosed aisle data centers using bypass recirculation. The development and experimental validation of a high-fidelity thermo-hydraulic model proceeded using the insights gained from the simple analysis. Using these tools, the study of optimum load placement is undertaken using computational fluid dynamics as the primary tool for analyzing the complex airflow and temperature patterns in the data center and is used to develop a rich dataset for the development of a reduced order model using proper orthogonal decomposition. The outcome of this work is the development of a robust set of rules that facilitate the energy efficient placement of the IT load amongst the operating servers in the data center and operation of the cooling infrastructure. The approach uses real-time temperature measurements at the inlet of the racks to remove IT load from the servers with the warmest inlet temperature (or add load to the servers with the coldest inlet temperature). These strategies are compared to conventional load placement techniques and show superior performance by considering the holistic optimization of the data center and cooling infrastructure for a range of data center IT utilization levels, operating strategies and ambient conditions