Ka-band Ga-As FET noise receiver/device development

The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm

Effective mass in quantum effects of radiation pressure

We study the quantum effects of radiation pressure in a high-finesse cavity with a mirror coated on a mechanical resonator. We show that the optomechanical coupling can be described by an effective susceptibility which takes into account every acoustic modes of the resonator and their coupling to the light. At low frequency this effective response is similar to a harmonic response with an effective mass smaller than the total mass of the mirror. For a plano-convex resonator the effective mass is related to the light spot size and becomes very small for small optical waists, thus enhancing the quantum effects of optomechanical coupling.Comment: 11 pages, 4 figures, RevTe

Dynamics of a pulsed continuous variable quantum memory

We study the transfer dynamics of non-classical fluctuations of light to the ground-state collective spin components of an atomic ensemble during a pulsed quantum memory sequence, and evaluate the relevant physical quantities to be measured in order to characterize such a quantum memory. We show in particular that the fluctuations stored into the atoms are emitted in temporal modes which are always different than those of the readout pulse, but which can nevertheless be retrieved efficiently using a suitable temporal mode-matching technique. We give a simple toy model - a cavity with variable transmission - which accounts for the behavior of the atomic quantum memory.Comment: 6 pages, 5 figure

Probing the Interatomic Potential of Solids by Strong-Field Nonlinear Phononics

Femtosecond optical pulses at mid-infrared frequencies have opened up the nonlinear control of lattice vibrations in solids. So far, all applications have relied on second order phonon nonlinearities, which are dominant at field strengths near 1 MVcm-1. In this regime, nonlinear phononics can transiently change the average lattice structure, and with it the functionality of a material. Here, we achieve an order-of-magnitude increase in field strength, and explore higher-order lattice nonlinearities. We drive up to five phonon harmonics of the A1 mode in LiNbO3. Phase-sensitive measurements of atomic trajectories in this regime are used to experimentally reconstruct the interatomic potential and to benchmark ab-initio calculations for this material. Tomography of the Free Energy surface by high-order nonlinear phononics will impact many aspects of materials research, including the study of classical and quantum phase transitions

Practical Characterization of Cell-Electrode Electrical Models in Bio-Impedance Assays

This paper presents the fitting process followed to adjust the parameters of the electrical model associated to a cell-electrode system in Electrical Cell-substrate Impedance Spectroscopy (ECIS) technique, to the experimental results from cell-culture assays. A new parameter matching procedure is proposed, under the basis of both, mismatching between electrodes and time-evolution observed in the system response, as consequence of electrode fabrication processes and electrochemical performance of electrode-solution interface, respectively. The obtained results agree with experimental performance, and enable the evaluation of the cell number in a culture, by using the electrical measurements observed at the oscillation parameters in the test circuits employed.Ministerio de Economía y Competitividad TEC2013-46242-C3-1-