Dynamic input match correction in R.F. low noise amplifiers

An R.F. circuit that recognizes its faults, and then corrects its performance in real-time has been the holy-grail of RFIC design. This work presents, for the first time, a complete architecture and successful implementation of such a circuit. It is the first step towards the grand vision of fault-free, package independent, integrated R.F. Front End circuitry. The performance of R.F. front-end circuitry can degrade significantly due to process faults and parasitic package inductances at its input. These inductances have wide tolerances and are difficult to co-design for. A novel methodology, which overcomes current obstacles plaguing such an objective, is proposed wherein the affected performance metric of the circuit is quantified, and the appropriate design parameter is modified in real-time, thus enabling self-correction. This proof of concept is demonstrated by designing a cascode LNA and the complete self-correction circuit in IBM 0.25 µm CMOS RF process. The self-correction circuitry ascertains the input match frequency of the circuit by measuring its performance and determines the frequency interval by which it needs to be shifted to restore it to the desired value. It then feeds back a digital word to the LNA which adaptively corrects its input-match. It offers the additional flexibility of using different packages for the front-end since it renders the circuitry independent of package parasitics, by re-calibrating the input match on-the-fly. The circuitry presented in this work offers the advantages of low power, robustness, absence of DSP cores or processors, reduction in design cycle times, guaranteed optimal performance under varying conditions and fast correction times (less than 30 µs)

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

Electrochemical noise limits of femtoampere-sensing, CMOS-integrated transimpedance amplifiers

Low-noise operational amplifiers are an important tool in the life sciences. Biosensor measurements typically rely on low-noise transimpedance amplifiers to record biological signals. Two different techniques were used to leverage the advantages of low-noise circuitry for bioelectronics. A CMOS-integrated system for measuring redox-active substrates using electrochemical read-out at very low noise levels is presented. The system incorporates 112 amplifier channels capable of current sensing with noise levels below 1 fArms in a 3.5-Hz bandwidth. The amplifier is externally connected to a gold microelectrode with a radius of 15 µm. The amplifier enables measurement of redox-couples such as potassium ferrocyanide/ferricyanide with concentrations down to 10 nM at current levels of only 300 fA. The electrochemical noise that sets the limits of detection is also measured and analyzed based on redox mass transfer equation and electrochemical impedance spectroscopy. Secondly, CMOS-integrated low noise junction field-effect transistors (JFETs) were developed in a standard 0.18-µm CMOS process. These JFETs reduce input referred flicker noise power by more than a factor of 10 when compared with equally sized n-channel MOS devices by eliminating oxide interfaces in contact with the channel. We show that this improvement in device performance translates into a factor-of-10 reduction in the input-referred noise of integrated CMOS operational amplifiers when JFET devices are used at the input

High-speed Analog-to-digital Converters For Modern Satellite Receivers: Design Verification Test And Sensitivity Analysis

Mixed-signal System-on-chip devices such as analog-to-digital converters (ADCs) have become increasingly prevalent in the semiconductor industry. Since the complexity and applications are different for each device, complex testing and characterization methods are required. Specifically, signal integrity in I/O interfaces requires that standard RF design and test techniques must be integrated into mixed signal processes. While such techniques may be difficult to implement, on-chip test-vehicles and RF circuitry offer the possibility of wireless approaches to chip testing. This would eliminate expensive wafer probing solution to verify the design of high-speed ADC functionality currently required for high-speed product evaluation. This thesis describes a new high-speed analog-to-digital converter test methodology. The target systems used on-chip digital de-multiplexing and clock distribution. A detail sequence of performance testing operations is presented. Digital outputs are post processed and fed into a computer-aided ADC performance characterization tool which is custom-developed in a MATLAB GUI. The problems of high sampling rate ADC testing are described. The test methodologies described reduce test costs and overcome many test hardware limitations. As our focus is on satellite receiver systems, we emphasize the measurement of inter-modulation distortion and effective resolution bandwidth. As a primary characterization component, Fourier analysis is used and we address the issue of sample window adjustment to eliminate spectral leakage and false spur generation. A 6-bit 800 MSamples/sec dual channel SiGe-based ADC is used as a target example and investigated on the corner lot process variations to determine the impact of process variations and the sensitivity of the ADCs to critical process parameter variations

Circuit solutions to compensate for device degradation in analog design in scaled technologies

The continued aggressive scaling of semiconductor devices has had detrimental effects on the performance of those devices as used in analog circuitry. Specifically, the maximum intrinsic gain (MIG) of the devices continues to degrade as the device channel lengths are reduced below 100 nm and beyond. MIG is shown to degrade from 21.6 dB in a 180 nm technology to 12.2 dB in a 65 nm technology despite the application of traditional design techniques including device size scaling and bias voltage increases. This reduction in MIG along with other process scaling effects significantly complicates the design of linear amplifiers in these technologies. This work proposes the use of positive feedback to compensate for MIG degradation in linear amplifier design in scaled technologies. Criteria for stable and process tolerant design are derived and examined in the context of amplifier models of varying degrees of complexity. This analysis defines an all-encompassing positive feedback design methodology for use in linear amplifier design of low-gain high-frequency amplifier design. Additionally, the effects of positive feedback are compared and contrasted to the effects of the commonly studied negative feedback design methodology. Finally, the methodology is applied to a differential amplifier stage in TSMC\u27s 65 nm process using standard threshold voltage, thin oxide CMOS devices. These amplifiers were fabricated and tested to validate the positive feedback design methodology. Simulation shows that 98.4% of positive feedback amplifiers have improved gain over the baseline differential amplifier with an average improvement in gain of 10.3 dB. Silicon measurements of the amplifier gain show improvements of 17.1 dB on average. Similar to the application of negative feedback, gain improvement is achieved at the cost of frequency response. The gain-bandwidth product of the amplifier is reduced by an average of 18.4 GHz from 44.6 GHz. The circuitry required to implement this technique represent a meager 6% increase in silicon area from 460 μm2 to 488 μm2

Uranium Dioxide Actinide Detection Device Support Design for Space Applications

Attention concerning the proliferation of nuclear weapons and materials has generated many research initiatives to detect, identify, and locate radiation emitted by actinides. In support of this effort, the `Fission Induced Neutron Detection of Nuclear Materials\u27 (FIND\u27NM) program was established to comprise a joint effort to explore this issue. The objective also co-extends the Air Force Research Laboratory uranium dioxide (UO2) detection sample growth, characterization, and electrical interface research. AFIT\u27s study accomplishes the design and fabrication of a space-tolerant PCB to support a UO2-based neutron detector. Further design considerations are made with the expectation of the platform to be inside an in-orbit satellite. The PCB will interface a satellite, which in turn will relay transferred data to researchers on the ground for later processing. The scope of the research is to provide a low-cost commercial-off-the-shelf solution with signal integrity and operational stability in mind. The study performed by LTC Dugan [16] and Lt Col Young [44] provided the basis from which the project stems. These circuit behavioral characteristics narrowed the components considered to accommodate the low-amplitude and fast-pulse output required from a device. Three distinct amplifier designs were required due to changes in the accepted theoretical electrical characteristics of the sensor. By circuit simulation, the three presented amplifier systems demonstrate the desired output for each sensor model, within a particular envelope of operation. The system can capture, collate, and disseminate data generated while operating within specified parameters. The completed and operational PCB presents a proof-of-concept that Space compliance devices can be made more cost-efficient by utilizing design aspects already included in larger system designs. The flexibility of the FPGA signal processing system can be used to try multiple operating configurations, ultimately resulting in an ASIC to further reduce the cost given large scale deployment of a unique design. Small detection devices like this could be installed on most orbital satellites and transmit data about areas of interest where actinide particle activity is detected

Application and design manual for High Performance RF products

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Feedback methods for inductorless bandwidth extension and linearisation of post-amplifiers in optical receiver frontends

Optical communication is increasingly important in today's telecommunications. It is not only a key component in long-haul infrastructure, but is also being brought into new applications within the datacentre, at the circuit board and integrated circuit level, and in next generation mobile networks. This thesis proposes feedback tuning approaches in order to address two challenges within optical receiver analog frontend circuits: a) the dynamic response of a prior bandwidth extension technique; and b) linearity optimisation. To address dynamic response, we begin with an inductorless method of bandwidth extension using positive feedback loops. In a multi-stage post-amplifier with local positive feedback loops, we propose an approach which tunes each positive feedback gain separately, and demonstrate that this achieves better dynamic response and eye opening than the prior equal-feedback-gain approach. We additionally propose root-locus analysis as a means of characterising dynamic response, and suggest some design guidelines based on this analysis. To address linearity optimisation, we propose the use of an interleaving negative-feedback post-amplifier topology, previously proposed only for bandwidth extension. We investigate the relationship between the feedback gains and linearity and develop a design approach for linearity optimisation. We then designed and fabricated two 70 dB 6 GHz optical receiver circuits, making use of two different post-amplifiers, in order to compare different design approaches. We achieved a linearity of 0.08 dBVrms OIP3 (quasi-static) and a THD of 0.195\% at 1 GHz

CMOS Front-End Circuits in 45-nm SOI Suitable for Modular Phased-Array 60-GHz Radios

Next Fifth-generation (5G) wireless technologies enabling ultra-wideband spectrum availability and increased system capacity can achieve multi-gigabit/s (Gbps) data rates suitable for ultra-high-speed internet access around the 60-GHz band (i.e., Wi-Gig Technology). This mm-wave band is unlicensed and experiences high propagation power losses. Therefore, it is suitable for short-range communications and requires antenna arrays to satisfy the link budget requirements. Half-duplex reconfigurable phased-array transceivers require wideband, low-cost, highly integrated front-end circuits such as bilateral RF switches, low-noise/power amplifiers, passive RF splitters/combiners, and phase shifters implemented in deep sub-micron CMOS. In this dissertation, analysis, design, and verification of essential CMOS front-end components are covered and fabricated in GlobalFoundries 45-nm RF-SOI CMOS technology. Firstly, a fully-differential, single-pole, single-throw (SPST) switch capable of high isolation in broadband CMOS transceivers is described. The SPST switch realizes better than 50-dB isolation (ISO) across DC to 43 GHz while maintaining an insertion loss (IL) below 3 dB. Measured RF input power for 1-dB compression (IP1dB) of the IL is +19.6 dBm, and the measured input third-order intercept point (IIP3) is +30.4 dBm (both assuming differential inputs at 20 GHz). The prototype has an active area of 0.0058 mm^2. Secondly, a single-pole double-throw (SPDT) switch is implemented using the SPST concept by using a balun to convert the shared differential path to a single-ended antenna port. The SPDT simulations predict less than 3.5-dB IL and greater than 40-dB ISO across 55 to 65 GHz frequency band. An IP1dB of +21 dBm is expected from large-signal simulations. The prototype has an active area of 0.117 mm^2. Thirdly, a fully-differential switched-LC topology adopted with slow-wave artificial transmission line concept, and phase inversion network is described for a 360-degree phase shift range with 11.25-degree phase resolution. The average IL of the complete phase shifter is 5.3 dB with less than 1-dB rms IL error. Furthermore, the IP1dB of the phase shifter is +16 dBm. The prototype has an active area of 0.245 mm^2. Lastly, a fully-differential, 2-stage, common-source (CS) low-noise amplifier (LNA) is developed with wideband matching from 57.8 GHz to 67 GHz, a maximum simulated forward power gain of 20.8 dB, and a minimum noise figure of 3.07 dB. The LNA consumes 21 mW and predicts an OP1dB of 4.8 dBm from the 1-V supply. The LNA consumes an active area of 0.028 mm^2