Ultra High Speed Short Circuit Protection for IGBT with Gate Charge Sensing

Short circuit (SC) protection for IGBT has been crucial issue since IGBTs have become major switching devices for power electronics applications. According to the IGBT performance improvement, chip current density has been increased and the chip has become as thin as 100μm. The high current density and thin wafer chip result in high temperature rising speed during SC condition and hence high speed protection scheme for IGBT is highly required. Conventional methods, such as sense IGBT configuration, have the response time of 5 micro second, for example, which is not sufficient to protect advanced IGBTs. In this paper, we propose a novel protection method with response time shorter than 1 micro second.The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, International Conference Center Hiroshima, Hiroshima, Japa

Full Digital Short Circuit Protection for Advanced IGBTs

A full digital short circuit protection method for advanced IGBTs has been proposed and experimentally demonstrated for the first time. The method employs combination of digital circuit, the gate charge sense instead of the conventional sense IGBT and analog circuit configuration. Digital protection scheme has significant advantages in thevprotection speed and flexibility.2011 23rd International Symposium on Power Semiconductor Devices & Ics (ISPSD. 2011), May 23?26, 2011, San Diego, California, US

Full Digital Short Circuit Protection for Advanced IGBTs

2011 23rd International Symposium on Power Semiconductor Devices & Ics (ISPSD. 2011), May 23?26, 2011, San Diego, California, USAA full digital short circuit protection method for advanced IGBTs has been proposed and experimentally demonstrated for the first time. The method employs combination of digital circuit, the gate charge sense instead of the conventional sense IGBT and analog circuit configuration. Digital protection scheme has significant advantages in thevprotection speed and flexibility

Load Short-Circuit Protection with Detecting the Gate Voltage and Gate Charge of an IGBT

This paper proposes a new load short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, AD converters, and DA converters, is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.半導体電力変換／モータドライブ合同研究会, 1月24日25日, 2014年, 神戸大学 六甲台キャンパス 滝川記念学術交流会館大会議室, 神戸

Short-Circuit Protection for an IGBT with Detecting the Gate Voltage and Gate Charge

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.ESREF 2014, 25th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES,FAILURE PHYSICS AND ANALYSIS, Sep 29–Oct 3, 2014, Technische Universität Berli

Development of fast short-circuit protection system for advanced IGBT

The higher current density of IGBTs has made it difficult to achieve high short-circuit withstand capability as well as good conduction characteristics. Therefore, a fast and reliable protection system is required for the safe operation of IGBT. This paper determines the short-circuit safe protection area (SCSPA) for advanced IGBT that has no short-circuit withstand capability and proposes the protection system satisfied this SCSPA. The fast protection is brought by PCB Rogowski coil and digital gate driver using digital circuit (FPGA). Experimental results verify that short-circuit detection time is 70 ns, shut-down time is reduced by controlling the gate resistance at turn-off

Full Digital Short Circuit Protection for Advanced IGBTs

A full digital short circuit protection method for advanced IGBTs has been proposed and experimentally demonstrated for the first time. The method employs combination of digital circuit, the gate charge sense instead of the conventional sense IGBT and analog circuit configuration. Digital protection scheme has significant advantages in the protection speed and flexibility.電子デバイス/半導体電力変換合同研究会, 10月27日-28日, 2011年, くにびきメッセ, 島根

Design and Implementation of a High Temperature Fully-Integrated BCD-on-SOI Under Voltage Lock Out Circuit

As concern about the environment has grown in recent years, alternatives in the automotive industry have become an important topic for researchers. One alternative being considered is electric vehicles, which utilize electric motors. DC/AC inverters and DC/DC power converters control these electric motors. A logic circuit is needed to power these converters; however, the logic generators inherently operate at a voltage too low to power the motors. A device known as the gate driver is the interface between the logic generators (or microcontroller) and the power devices (power converter). The gate driver provides the power needed to drive the power devices. Circuits are susceptible to voltage and temperature changes though. For this reason, protection circuits must be implemented as an integral part of the gate driver circuits. The Under Voltage Lock Out (UVLO) circuit provides important detection of under voltage conditions in the power supply thus preventing malfunctions. There are multiple power supplies in the gate driver circuit, and it is important to monitor all of these supplies for both surges and reductions in power. If the power supply should drop below the threshold (nominally 80%) there could be issues in the gate driver’s functionality. Since the gate driver will be located under the hood of a hybrid electric vehicles, operating temperatures can reach extremely high values. For this reason, circuit designs must provide reliable operation of the circuits in an extreme environment