Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit

Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improved to develop high precision gas sensors for automotive and space applications. The proposed model aids in systematical study of the sensor performance and prediction of sensitivities. The linear relation of threshold voltage shift at thermal equilibrium is used in predicting the sensor response. Numerical model for the reaction rates and the electrical dipole at the adsorption sites at the surface and metal/semiconductor interface have been developed and the sensor performance is analyzed for various gas concentrations. The validation of the model has been achieved through surface and interfacial charge adsorption-based gate electrode work function, Schottky barrier, 2DEG and threshold voltage deduction using MATLAB and SILVACO ATLAS TCAD. Further the applicability of gd (channel conductance) as gas sensing metric is also presented. With high ID and gd percentile sensitivities of 118.5% and 92 % for 10 ppm hydrogen concentration. The sensor shows capability for detection in sub-ppm levels by exhibiting a response of 0.043% for 0.01ppm (10 ppb) hydrogen concentration. The detection limit of the sensor (1% sensitivity) presented here is 169 ppb and the device current increases by 34.2 μA for 1ppb hydrogen concentration

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time

Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

International audienceWe report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real tim

Investigation of Wear Mechanism of Gallium Nitride

The optoelectronic properties of gallium nitride (GaN) has been extensively studied for decades, which has facilitated its application in many different areas, cementing it as one of the most important semiconductor materials in the world. However, in comparison to the study of its optoelectronic properties, there are few studies of its mechanical properties - especially the tribological performance. Knowing the tribological properties of GaN, such as friction and wear, is crucial for understanding its machinability, the implementation of GaN in MEMS, solar cells, and other devices, as well as the wear performance of these GaN-based devices when working under harsh environments. In our study, we reveal that GaN has an ultralow wear nature, and that its wear rate can approach that of diamond. We also discover that the wear rate of GaN is affected by its crystallographic orientation, humidity, and composition.For the crystallographic orientation dependence, we look into the physics by both experimental and computational methods. We demonstrate that both the friction coefficient and wear rate of GaN exhibits a 60° periodicity. We conclude that these periodic variations of wear rate and friction coefficient are the results of a periodic variation of the energy barrier.The moisture dependent wear mechanism of GaN has been investigated under dry, low humidity, and high humidity environments. The results show that the wear rate of GaN perfectly follows an increasing of the humidity which spans over two orders of magnitude when the testing environment switches from dry nitrogen to humid lab air. On the contrary, the friction coefficient gave a contrary response, i.e., the lowest friction coefficient was found under low humidity environment, dry nitrogen had the highest friction coefficient, and the humid environment had its friction in the middle. Various characterization techniques, including SEM/EDS, AFM and TEM were employed to interrogate the worn surfaces under each condition. Based on the results, we hypothesize that the wear under dry nitrogen environment is adhesive in nature whereas grooving abrasive wear dominates the wear behavior of GaN under a humid environment.The compositional study of GaN wear revealed that by alloying different elements into the GaN system, one can not only tune the bandgap, but also modify the wear rate. This finding can be useful for applications and design that require suitable electronic properties while keep the wear rate within an acceptable range.Furthermore, during the investigation of the GaN wear mechanism, we discovered that the tribological sliding can also alter the surface band bending of this material. Our results demonstrate that the environment, number of sliding cycles, and normal loads can effectively tune the surface band bending of GaN. This finding shows the capability of mechanical dynamic contact for surface electronic property modification, which can be used in various applications, such as gas sensing, photocatalysis, and photochemistry.Understanding of the wear mechanism of GaN as well as the shear-induced band bending on GaN can remarkably promote the applications of GaN in various fields other than the optoelectronic area. This also reinforces the important message that tribology is not only a discipline that focuses on investigation of protective coating and lubrication but also can be used in device design and fabrication