XNOR Neural Engine: a Hardware Accelerator IP for 21.6 fJ/op Binary Neural Network Inference

Binary Neural Networks (BNNs) are promising to deliver accuracy comparable to conventional deep neural networks at a fraction of the cost in terms of memory and energy. In this paper, we introduce the XNOR Neural Engine (XNE), a fully digital configurable hardware accelerator IP for BNNs, integrated within a microcontroller unit (MCU) equipped with an autonomous I/O subsystem and hybrid SRAM / standard cell memory. The XNE is able to fully compute convolutional and dense layers in autonomy or in cooperation with the core in the MCU to realize more complex behaviors. We show post-synthesis results in 65nm and 22nm technology for the XNE IP and post-layout results in 22nm for the full MCU indicating that this system can drop the energy cost per binary operation to 21.6fJ per operation at 0.4V, and at the same time is flexible and performant enough to execute state-of-the-art BNN topologies such as ResNet-34 in less than 2.2mJ per frame at 8.9 fps.Comment: 11 pages, 8 figures, 2 tables, 3 listings. Accepted for presentation at CODES'18 and for publication in IEEE Transactions on Computer-Aided Design of Circuits and Systems (TCAD) as part of the ESWEEK-TCAD special issu

Programming Quantum Computers Using Design Automation

Recent developments in quantum hardware indicate that systems featuring more than 50 physical qubits are within reach. At this scale, classical simulation will no longer be feasible and there is a possibility that such quantum devices may outperform even classical supercomputers at certain tasks. With the rapid growth of qubit numbers and coherence times comes the increasingly difficult challenge of quantum program compilation. This entails the translation of a high-level description of a quantum algorithm to hardware-specific low-level operations which can be carried out by the quantum device. Some parts of the calculation may still be performed manually due to the lack of efficient methods. This, in turn, may lead to a design gap, which will prevent the programming of a quantum computer. In this paper, we discuss the challenges in fully-automatic quantum compilation. We motivate directions for future research to tackle these challenges. Yet, with the algorithms and approaches that exist today, we demonstrate how to automatically perform the quantum programming flow from algorithm to a physical quantum computer for a simple algorithmic benchmark, namely the hidden shift problem. We present and use two tool flows which invoke RevKit. One which is based on ProjectQ and which targets the IBM Quantum Experience or a local simulator, and one which is based on Microsoft's quantum programming language Q$\#$.Comment: 10 pages, 10 figures. To appear in: Proceedings of Design, Automation and Test in Europe (DATE 2018

A Robust 96.6-dB-SNDR 50-kHz-Bandwidth Switched-Capacitor Delta-Sigma Modulator for IR Imagers in Space Instrumentation

Infrared imaging technology, used both to study deep-space bodies' radiation and environmental changes on Earth, experienced constant improvements in the last few years, pushing data converter designers to face new challenges in terms of speed, power consumption and robustness against extremely harsh operating conditions. This paper presents a 96.6-dB-SNDR (Signal-to-Noise-plus-Distortion Ratio) 50-kHz-bandwidth fourth-order single-bit switched-capacitor delta-sigma modulator for ADC operating at 1.8 V and consuming 7.9 mW fit for space instrumentation. The circuit features novel Class-AB single-stage switched variable-mirror amplifiers (SVMAs) enabling low-power operation, as well as low sensitivity to both process and temperature deviations for the whole modulator. The physical implementation resulted in a 1.8-mm 2 chip integrated in a standard 0.18-μm 1-poly-6-metal (1P6M) CMOS technology, and it reaches a 164.6-dB Schreier figure of merit from experimental SNDR measurements without making use of any clock bootstrapping, analog calibration, nor digital compensation technique. When coupled to a IR imager, the current design allows more than 50 frames per minute with a resolution of 16 effective number of bits (ENOB) while consuming less than 300 mW

Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

A Zero Bias Pixel Sensor and its Zero-Bias Column Buffer-Direct-Injection Circuit

Two pixel sensors, namely active pixel sensor (APS) and pseudo-active pixel sensor (PAPS), are reviewed to show that APS suffers from dark current while PAPS suffers from leakage current. Then a new pixel sensor called  zero bias pixel sensor (ZBPS) in which only two MOS switches in addition to the photodiode are used, one for connecting the pixel’s photodiode to a column bus and the other for bypassing it. A zero-bias column buffer-direct-injection (ZCBDI) circuit, which is similar to a regulated cascode amplifier, is used to control the voltage at column bus at zero. All ZBPS pixels are guaranteed to work at zero voltage at all times to eliminate the dark current as well as leakage current. A case of a 10 µm x 10 µm ZBPS pixel designed with standard 0.18 µm CMOS process is studied through simulation. This pixel generates a photocurrent within a range from 1 pA to 100 nA. To handle a large variation of photocurrent while maintaining zero column voltage, the ZCBDI is designed using differential cascode, common source, and buffer stages and then compensated for 50 degree phase margin. Transient simulation shows that the pixel steady state response time is around 1.406 ms, leading to at most 5.5 frames per second for an image of 128 x 128 ZBPS pixels. The fill factor of ZBPS for this case is around 59%