Automated Synthesis of Unconventional Computing Systems

Despite decades of advancements, modern computing systems which are based on the von Neumann architecture still carry its shortcomings. Moore\u27s law, which had substantially masked the effects of the inherent memory-processor bottleneck of the von Neumann architecture, has slowed down due to transistor dimensions nearing atomic sizes. On the other hand, modern computational requirements, driven by machine learning, pattern recognition, artificial intelligence, data mining, and IoT, are growing at the fastest pace ever. By their inherent nature, these applications are particularly affected by communication-bottlenecks, because processing them requires a large number of simple operations involving data retrieval and storage. The need to address the problems associated with conventional computing systems at the fundamental level has given rise to several unconventional computing paradigms. In this dissertation, we have made advancements for automated syntheses of two types of unconventional computing paradigms: in-memory computing and stochastic computing. In-memory computing circumvents the problem of limited communication bandwidth by unifying processing and storage at the same physical locations. The advent of nanoelectronic devices in the last decade has made in-memory computing an energy-, area-, and cost-effective alternative to conventional computing. We have used Binary Decision Diagrams (BDDs) for in-memory computing on memristor crossbars. Specifically, we have used Free-BDDs, a special class of binary decision diagrams, for synthesizing crossbars for flow-based in-memory computing. Stochastic computing is a re-emerging discipline with several times smaller area/power requirements as compared to conventional computing systems. It is especially suited for fault-tolerant applications like image processing, artificial intelligence, pattern recognition, etc. We have proposed a decision procedures-based iterative algorithm to synthesize Linear Finite State Machines (LFSM) for stochastically computing non-linear functions such as polynomials, exponentials, and hyperbolic functions

Approximate In-memory computing on RERAMs

Computing systems have seen tremendous growth over the past few decades in their capabilities, efficiency, and deployment use cases. This growth has been driven by progress in lithography techniques, improvement in synthesis tools, architectures and power management. However, there is a growing disparity between computing power and the demands on modern computing systems. The standard Von-Neuman architecture has separate data storage and data processing locations. Therefore, it suffers from a memory-processor communication bottleneck, which is commonly referred to as the \u27memory wall\u27. The relatively slower progress in memory technology compared with processing units has continued to exacerbate the memory wall problem. As feature sizes in the CMOS logic family reduce further, quantum tunneling effects are becoming more prominent. Simultaneously, chip transistor density is already so high that all transistors cannot be powered up at the same time without violating temperature constraints, a phenomenon characterized as dark-silicon. Coupled with this, there is also an increase in leakage currents with smaller feature sizes, resulting in a breakdown of \u27Dennard\u27s\u27 scaling. All these challenges cannot be met without fundamental changes in current computing paradigms. One viable solution is in-memory computing, where computing and storage are performed alongside each other. A number of emerging memory fabrics such as ReRAMS, STT-RAMs, and PCM RAMs are capable of performing logic in-memory. ReRAMs possess high storage density, have extremely low power consumption and a low cost of fabrication. These advantages are due to the simple nature of its basic constituting elements which allow nano-scale fabrication. We use flow-based computing on ReRAM crossbars for computing that exploits natural sneak paths in those crossbars. Another concurrent development in computing is the maturation of domains that are error resilient while being highly data and power intensive. These include machine learning, pattern recognition, computer vision, image processing, and networking, etc. This shift in the nature of computing workloads has given weight to the idea of approximate computing , in which device efficiency is improved by sacrificing tolerable amounts of accuracy in computation. We present a mathematically rigorous foundation for the synthesis of approximate logic and its mapping to ReRAM crossbars using search based and graphical methods

Oxide Memristive Devices

Resistive switching in metal oxide materials has recently renewed the interest of many researchers due to the many application in non-volatile memory and neuromorphic computing. A memristor or a memristive device in general, is a device behaving as nonlinear resistor with memory which depends on the amount of charges that passes through it. A novel idea of combining the physical resistive switching phenomenon and the circuit-theoretic formalism of memristors was proposed in 2008. The physical mechanism on how resistive switching occurs is still under debate. A physical understanding of the switching phenomenon is of much importance in order to tailor specific properties for memory applications. To investigate the resistive switching in oxide materials, memristive devices were fabricated starting from materials processing: low-pressure chemical vapor deposition of ZnO nanowires (NWs), low-temperature atomic layer deposition (ALD) of TiO2 thin films and micro-pulse ALD of Fe2O3 thin films. The distinct geometry of ZnO NWs makes it possible to investigate the effect of the electrode material, surface states and compliance to the memristive properties. A simpler method of fabricating TiO2-based devices was explored using low-temperature atomic layer deposition. This approach is very promising for device application using photoresist and polymeric substrates without thermal degradation during and after device fabrication. ALD of pure phase Fe2O3 thin films was demonstrated using cyclic micro-pulses. Based on the performance of the fabricated devices, the oxide materials under this study have promising properties for the next-generation memory devices

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Nano-intrinsic security primitives for internet of everything

With the advent of Internet-enabled electronic devices and mobile computer systems, maintaining data security is one of the most important challenges in modern civilization. The innovation of physically unclonable functions (PUFs) shows great potential for enabling low-cost low-power authentication, anti-counterfeiting and beyond on the semiconductor chips. This is because secrets in a PUF are hidden in the randomness of the physical properties of desirably identical devices, making it extremely difficult, if not impossible, to extract them. Hence, the basic idea of PUF is to take advantage of inevitable non-idealities in the physical domain to create a system that can provide an innovative way to secure device identities, sensitive information, and their communications. While the physical variation exists everywhere, various materials, systems, and technologies have been considered as the source of unpredictable physical device variation in large scales for generating security primitives. The purpose of this project is to develop emerging solid-state memory-based security primitives and examine their robustness as well as feasibility. Firstly, the author gives an extensive overview of PUFs. The rationality, classification, and application of PUF are discussed. To objectively compare the quality of PUFs, the author formulates important PUF properties and evaluation metrics. By reviewing previously proposed constructions ranging from conventional standard complementary metal-oxide-semiconductor (CMOS) components to emerging non-volatile memories, the quality of different PUFs classes are discussed and summarized. Through a comparative analysis, emerging non-volatile redox-based resistor memories (ReRAMs) have shown the potential as promising candidates for the next generation of low-cost, low-power, compact in size, and secure PUF. Next, the author presents novel approaches to build a PUF by utilizing concatenated two layers of ReRAM crossbar arrays. Upon concatenate two layers, the nonlinear structure is introduced, and this results in the improved uniformity and the avalanche characteristic of the proposed PUF. A group of cell readout method is employed, and it supports a massive pool of challenge-response pairs of the nonlinear ReRAM-based PUF. The non-linear PUF construction is experimentally assessed using the evaluation metrics, and the quality of randomness is verified using predictive analysis. Last but not least, random telegraph noise (RTN) is studied as a source of entropy for a true random number generation (TRNG). RTN is usually considered a disadvantageous feature in the conventional CMOS designs. However, in combination with appropriate readout scheme, RTN in ReRAM can be used as a novel technique to generate quality random numbers. The proposed differential readout-based design can maintain the quality of output by reducing the effect of the undesired noise from the whole system, while the controlling difficulty of the conventional readout method can be significantly reduced. This is advantageous as the differential readout circuit can embrace the resistance variation features of ReRAMs without extensive pre-calibration. The study in this thesis has the potential to enable the development of cost-efficient and lightweight security primitives that can be integrated into modern computer mobile systems and devices for providing a high level of security