Indium substitution effect on the topological crystalline insulator family (Pb1−x_{1-x}Snx_{x})1−y_{1-y}Iny_{y}Te: Topological and superconducting properties

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb$_{1-x}$Sn$_{x}$)$_{1-y}$In$_{y}$Te. For samples with a tin concentration $x\le50\%$, the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping the samples show weak-metallic behavior, similar to their parent compounds; with ~6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, Tc, positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.Comment: 16 pages, 8 figure

Method for attaching a fused-quartz mirror to a conductive metal substrate

A fused-quartz mirror is attached to a conductive metal substrate by the following steps: tinning one surface of a fused-quartz mirror with a solder of substantially pure indium; tinning a metallic substrate with an indium eutectic alloy consisting essentially of indium bismuth, lead and tin having a melting point substantially below that of indium; heating the eutectic alloy to a temperature substantially above its melting point, but below that of the solder; floating the mirror into place, and subsequently cooling the alloy to a temperature substantially below its melting point

Competitive segregation of gallium and indium at heterophase Cu–MnO interfaces studied with transmission electron microscopy

This paper concentrates on the possible segregation of indium and gallium and competitive segregation of gallium and indium at atomically flat parallel {111}-oriented Cu–MnO interfaces. The segregation of gallium at Cu–MnO interfaces after introduction of gallium in the copper matrix of internally oxidized Cu–1 at.%Mn could be hardly detected with energy-dispersive spectrometry in a field emission gun transmission electron microscope. After a heat treatment to dissolve indium in the copper matrix, gallium has a weak tendency to segregate, that is 2.5 at.% Ga per monolayer at the interface compared with 2 at.% in the copper matrix. The striking result is that this gallium segregation is observable because it does not occur at the metal side of the interface but in the first two monolayers at the oxide side. Using the same heat treatment as for introducing indium in the sample, but without indium present, gallium segregates strongly at the oxide side of the Cu–MnO interface with a concentration of about 14.3 at.% in each monolayer of the two. In contrast, the presence of gallium has no influence on the segregation of indium towards Cu–MnO interfaces, because the outermost monolayer at the metal side of the interface contains 17.6 at.% In, that is similar to previously found results. This leads to the intriguing conclusions, firstly, that, in contrast with antimony and indium, gallium segregates at the oxide side of the interface and, secondly, that the presence of indium strongly hampers gallium segregation. The results from analytical transmission electron microscopy on gallium segregation are supported by high-resolution transmission electron microscopy observations.

Direct Observation of Early-stage Quantum Dot Growth Mechanisms with High-temperature Ab Initio Molecular Dynamics

Colloidal quantum dots (QDs) exhibit highly desirable size- and shape-dependent properties for applications from electronic devices to imaging. Indium phosphide QDs have emerged as a primary candidate to replace the more toxic CdSe QDs, but production of InP QDs with the desired properties lags behind other QD materials due to a poor understanding of how to tune the growth process. Using high-temperature ab initio molecular dynamics (AIMD) simulations, we report the first direct observation of the early stage intermediates and subsequent formation of an InP cluster from separated indium and phosphorus precursors. In our simulations, indium agglomeration precedes formation of In-P bonds. We observe a predominantly intercomplex pathway in which In-P bonds form between one set of precursor copies while the carboxylate ligand of a second indium precursor in the agglomerated indium abstracts a ligand from the phosphorus precursor. This process produces an indium-rich cluster with structural properties comparable to those in bulk zinc-blende InP crystals. Minimum energy pathway characterization of the AIMD-sampled reaction events confirms these observations and identifies that In-carboxylate dissociation energetics solely determine the barrier along the In-P bond formation pathway, which is lower for intercomplex (13 kcal/mol) than intracomplex (21 kcal/mol) mechanisms. The phosphorus precursor chemistry, on the other hand, controls the thermodynamics of the reaction. Our observations of the differing roles of precursors in controlling QD formation strongly suggests that the challenges thus far encountered in InP QD synthesis optimization may be attributed to an overlooked need for a cooperative tuning strategy that simultaneously addresses the chemistry of both indium and phosphorus precursors.Comment: 40 pages, 9 figures, submitted for publicatio

Indium adhesion provides quantitative measure of surface cleanliness

Indium tipped probe measures hydrophobic and hydrophilic contaminants on rough and smooth surfaces. The force needed to pull the indium tip, which adheres to a clean surface, away from the surface provides a quantitative measure of cleanliness