Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals

Multimedia applications are driving wireless network operators to add high-speed data services such as Edge (E-GPRS), WCDMA (UMTS) and WLAN (IEEE 802.11a,b,g) to the existing GSM network. This creates the need for multi-mode cellular handsets that support a wide range of communication standards, each with a different RF frequency, signal bandwidth, modulation scheme etc. This in turn generates several design challenges for the analog and digital building blocks of the physical layer. In addition to the above-mentioned protocols, mobile devices often include Bluetooth, GPS, FM-radio and TV services that can work concurrently with data and voice communication. Multi-mode, multi-band, and multi-standard mobile terminals must satisfy all these different requirements. Sharing and/or switching transceiver building blocks in these handsets is mandatory in order to extend battery life and/or reduce cost. Only adaptive circuits that are able to reconfigure themselves within the handover time can meet the design requirements of a single receiver or transmitter covering all the different standards while ensuring seamless inter-interoperability. This paper presents analog and digital base-band circuits that are able to support GSM (with Edge), WCDMA (UMTS), WLAN and Bluetooth using reconfigurable building blocks. The blocks can trade off power consumption for performance on the fly, depending on the standard to be supported and the required QoS (Quality of Service) leve

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

CMOS design enhancement techniques for RF receivers. Analysis, design and implementation of RF receivers with component enhancement and component reduction for improved sensitivity and reduced cost, using CMOS technology.

Silicon CMOS Technology is now the preferred process for low power wireless communication devices, although currently much noisier and slower than comparable processes such as SiGe Bipolar and GaAs technologies. However, due to ever-reducing gate sizes and correspondingly higher speeds, higher Ft CMOS processes are increasingly competitive, especially in low power wireless systems such as Bluetooth, Wireless USB, Wimax, Zigbee and W-CDMA transceivers. With the current 32 nm gate sized devices, speeds of 100 GHz and beyond are well within the horizon for CMOS technology, but at a reduced operational voltage, even with thicker gate oxides as compensation. This thesis investigates newer techniques, both from a systems point of view and at a circuit level, to implement an efficient transceiver design that will produce a more sensitive receiver, overcoming the noise disadvantage of using CMOS Silicon. As a starting point, the overall components and available SoC were investigated, together with their architecture. Two novel techniques were developed during this investigation. The first was a high compression point LNA design giving a lower overall systems noise figure for the receiver. The second was an innovative means of matching circuits with low Q components, which enabled the use of smaller inductors and reduced the attenuation loss of the components, the resulting smaller circuit die size leading to smaller and lower cost commercial radio equipment. Both these techniques have had patents filed by the University. Finally, the overall design was laid out for fabrication, taking into account package constraints and bond-wire effects and other parasitic EMC effects

Canadian Hydrogen Intensity Mapping Experiment (CHIME) Pathfinder

A pathfinder version of CHIME (the Canadian Hydrogen Intensity Mapping Experiment) is currently being commissioned at the Dominion Radio Astrophysical Observatory (DRAO) in Penticton, BC. The instrument is a hybrid cylindrical interferometer designed to measure the large scale neutral hydrogen power spectrum across the redshift range 0.8 to 2.5. The power spectrum will be used to measure the baryon acoustic oscillation (BAO) scale across this poorly probed redshift range where dark energy becomes a significant contributor to the evolution of the Universe. The instrument revives the cylinder design in radio astronomy with a wide field survey as a primary goal. Modern low-noise amplifiers and digital processing remove the necessity for the analog beamforming that characterized previous designs. The Pathfinder consists of two cylinders 37\,m long by 20\,m wide oriented north-south for a total collecting area of 1,500 square meters. The cylinders are stationary with no moving parts, and form a transit instrument with an instantaneous field of view of $\sim$100\,degrees by 1-2\,degrees. Each CHIME Pathfinder cylinder has a feedline with 64 dual polarization feeds placed every $\sim$30\,cm which Nyquist sample the north-south sky over much of the frequency band. The signals from each dual-polarization feed are independently amplified, filtered to 400-800\,MHz, and directly sampled at 800\,MSps using 8 bits. The correlator is an FX design, where the Fourier transform channelization is performed in FPGAs, which are interfaced to a set of GPUs that compute the correlation matrix. The CHIME Pathfinder is a 1/10th scale prototype version of CHIME and is designed to detect the BAO feature and constrain the distance-redshift relation.Comment: 20 pages, 12 figures. submitted to Proc. SPIE, Astronomical Telescopes + Instrumentation (2014

NASA Tech Briefs, August 2008

Customizable Digital Receivers for Radar Two-Camera Acquisition and Tracking of a Flying Target Visual Data Analysis for Satellites A Data Type for Efficient Representation of Other Data Types Hand-Held Ultrasonic Instrument for Reading Matrix Symbols Broadband Microstrip-to-Coplanar Strip Double-Y Balun A Topographical Lidar System for Terrain-Relative Navigation Programmable Low-Voltage Circuit Breaker and Tester Electronic Switch Arrays for Managing Microbattery Arrays Topics covered include: Lower-Dark-Current, Higher-Blue-Response CMOS Imagers; Fabricating Large-Area Sheets of Single-Layer Graphene by CVD; Support for Diagnosis of Custom Computer Hardware; Providing Goal-Based Autonomy for Commanding a Spacecraft; Dynamic Method for Identifying Collected Sample Mass; Optimal Planning and Problem-Solving; Attitude-Control Algorithm for Minimizing Maneuver Execution Errors; Grants Document-Generation System; Heat-Storage Modules Containing LiNO3 3H2O and Graphite Foam; Precipitation-Strengthened, High-Temperature, High-Force Shape Memory Alloys; Improved Relief Valve Would Be Less Susceptible to Failure; Safety Modification of Cam-and-Groove Hose Coupling; Using Composite Materials in a Cryogenic Pump; Using Electronic Noses to Detect Tumors During Neurosurgery; Producing Newborn Synchronous Mammalian Cells; Smaller, Lower-Power Fast-Neutron Scintillation Detectors; Rotationally Vibrating Electric-Field Mill; Estimating Hardness from the USDC Tool-Bit Temperature Rise; Particle-Charge Spectrometer; Automated Production of Movies on a Cluster of Computers; FIDO-Class Development Rover; and Tone-Based Command of Deep Space Probes Using Ground Antennas

Blocker Tolerant Radio Architectures

Future radio platforms have to be inexpensive and deal with a variety of co- existence issues. The technology trend during the last few years is towards system- on-chip (SoC) that is able to process multiple standards re-using most of the digital resources. A major bottle-neck to this approach is the co-existence of these standards operating at different frequency bands that are hitting the receiver front-end. So the current research is focused on the power, area and performance optimization of various circuit building blocks of a radio for current and incoming standards. Firstly, a linearization technique for low noise amplifiers (LNAs) called, Robust Derivative Superposition (RDS) method is proposed. RDS technique is insensitive to Process Voltage and Temperature (P.V.T.) variations and is validated with two low noise transconductance amplifier (LNTA) designs in 0.18µm CMOS technology. Measurement results from 5 dies of a resistive terminated LNTA shows that the pro- posed method improves IM3 over 20dB for input power up to -18dBm, and improves IIP_(3) by 10dB. A 2V inductor-less broadband 0.3 to 2.8GHz balun-LNTA employing the proposed RDS linearization technique was designed and measured. It achieves noise figure of 6.5dB, IIP3 of 16.8dBm, and P1dB of 0.5dBm having a power consumption of 14.2mW. The balun LNTA occupies an active area of 0.06mm2. Secondly, the design of two high linearity, inductor-less, broadband LNTAs employing noise and distortion cancellation techniques is presented. Main design issues and the performance trade-offs of the circuits are discussed. In the fully differential architecture, the first LNTA covers 0.1-2GHz bandwidth and achieves a minimum noise figure (NFmin) of 3dB, IIP_(3) of 10dBm and a P_(1dB) of 0dBm while dissipating 30.2mW. The 2^(nd) low power bulk driven LNTA with 16mW power consumption achieves NFmin of 3.4dB, IIP3 of 11dBm and 0.1-3GHz bandwidth. Each LNTA occupy an active area of 0.06mm2 in 45nm CMOS. Thirdly, a continuous-time low-pass ∆ΣADC equipped with design techniques to provide robustness against loop saturation due to blockers is presented. Loop over- load detection and correction is employed to improve the ADC’s tolerance to blockers; a fast overload detector activates the input attenuator, maintaining the ADC in linear operation. To further improve ADC’s blocker tolerance, a minimally-invasive integrated low-pass filter that reduces the most critical adjacent/alternate channel blockers is implemented. An ADC prototype is implemented in a 90nm CMOS technology and experimentally it achieves 69dB dynamic range over a 20MHz bandwidth with a sampling frequency of 500MHz and 17.1mW of power consumption. The alternate channel blocker tolerance at the most critical frequency is as high as -5.5dBFS while the conventional feed-forward modulator becomes unstable at -23.5dBFS of blocker power. The proposed blocker rejection techniques are minimally-invasive and take less than 0.3µsec to settle after a strong agile blocker appears. Finally, a new radio partitioning methodology that gives robust analog and mixed signal radio development in scaled technology for SoC integration, and the co-design of RF FEM-antenna system is presented. Based on the proposed methodology, a CMOS RF front-end module (FEM) with power amplifier (PA), LNA and transmit/receive switch, co-designed with antenna is implemented. The RF FEM circuit is implemented in a 32nm CMOS technology. Post extracted simulations show a noise figure < 2.5dB, S_(21) of 14dB, IIP3 of 7dBm and P1dB of -8dBm for the receiver. Total power consumption of the receiver is 11.8mW from a 1V supply. On the trans- mitter side, PA achieves peak RF output power of 22.34dBm with peak power added efficiency (PAE) of 65% and PAE of 33% with linearization at -6dB power back off. Simulations show an efficiency of 80% for the miniaturized dipole antenna

Low-Power High Data-Rate Wireless Transmitter For Medical Implantable Devices

RÉSUMÉ Les émetteurs-récepteurs radiofréquences (RF) sont les circuits de communication les plus communs pour établir des interfaces home-machine dédiées aux dispositifs médicaux implantables. Par exemple, la surveillance continue de paramètres de santé des patients souffrant d'épilepsie nécessite un étage de communication sans-fil capable de garantir un transfert de données rapide, en temps réel, à faible puissance tout en étant implémenté dans un faible volume. La consommation de puissance des dispositifs implantables implique une durée de vie limitée de la batterie qui nécessite alors une chirurgie pour son remplacement, a moins qu’une technique de transfert de puissance sans-fil soit utilisée pour recharger la batterie ou alimenter l’implant a travers les tissus humains. Dans ce projet, nous avons conçu, implémenté et testé un émetteur RF à faible puissance et haut-débit de données opérant à 902-928 MHz de la bande fréquentielle industrielle-scientifique-médicale (ISM) d’Amérique du Nord. Cet émetteur fait partie d'un système de communication bidirectionnel dédié à l’interface sans-fil des dispositifs électroniques implantables et mettables et bénéficie d’une nouvelle approche de modulation par déplacement de fréquence (FSK). Les différentes étapes de conception et d’implémentation de l'architecture proposée pour l'émetteur sont discutées et analysées dans cette thèse. Les blocs de circuits sont réalisés suivant les équations dérivées de la modulation FSK proposée et qui mènera à l'amélioration du débit de données et de la consommation d'énergie. Chaque bloc est implémenté de manière à ce que la consommation d'énergie et la surface de silicium nécessaires soient réduites. L’étage de modulation et le circuit mélangeur ne nécessitent aucun courant continu grâce à leur structure passive.Parmi les circuits originaux, un oscillateur en quadrature contrôlé-en-tension (QVCO) de faible puissance est réalisé pour générer des signaux différentiels en quadrature, rail-à-rail avec deux gammes de fréquences principales de 0.3 à 11.5 MHz et de 3 à 40 MHz. L'étage de sortie énergivore est également amélioré et optimisé pour atteindre une efficacité de puissance de ~ 37%. L'émetteur proposé a été implémenté et fabriqué à la suite de simulations post-layout approfondies.----------ABSTRACT Wireless radio frequency (RF) transceivers are the most common communication front-ends used to realize the human-machine interfaces of medical devices. Continuous monitoring of body behaviour of patients suffering from Epilepsy, for example, requires a wireless communication front-end capable of maintaining a fast, real-time and low-power data communication while implemented in small size. Power budget limitation of the implantable and wearable medical devices obliges engineers to replace or recharge the battery cell through frequent medial surgeries or other power transfer techniques. In this project, a low-power and high data-rate RF transmitter (Tx) operating at North-American Industrial-Scientific-Medical (ISM) frequency band (902-928 MHz) is designed, implemented and tested. This transmitter is a part of a bi-directional transceiver dedicated to the wireless interface of implantable and wearable medical devices and benefits from a new efficient Frequency-Shift Keying (FSK) modulation scheme. Different design and implementation stages of the proposed transmitter architecture are discussed and analyzed in this thesis. The building blocks are realized according to the equations derived from the proposed FSK modulation, which results in improvement in data-rate and power consumption. Each block is implemented such that the power consumption and needed chip area are lowered while the modulation block and the mixer circuit require no DC current due to their passive structure. Among the original blocks, a low-power quadrature voltage-controlled oscillator (QVCO) is achieved to provide differential quadrature rail-to-rail signals with two main frequency ranges of 0.3-11.5 MHz and 3-40 MHz. The power-hungry output stage is also improved and optimized to achieve power efficiency of ~37%. The proposed transmitter was implemented and fabricated following deep characterisation by post-layout simulation. Both simulation and measurement results are discussed and compared with state-of-the-art transmitters showing the contribution of this work in this very popular research field. The Figure-Of-Merit (FOM) was improved, meaning mainly increasing the data-rate and lowering the power consumption of the circuit. The transmitter is implemented using 130 nm CMOS technology with 1.2 V supply voltage. A data-rate of 8 Mb/s was measured while consuming 1.4 mA and resulting in energy consumption of 0.21 nJ/b. The fabricated transmitter has small active silicon area of less than 0.25 mm2

Receiver Front-Ends in CMOS with Ultra-Low Power Consumption

Historically, research on radio communication has focused on improving range and data rate. In the last decade, however, there has been an increasing demand for low power and low cost radios that can provide connectivity with small devices around us. They should be able to offer basic connectivity with a power consumption low enough to function extended periods of time on a single battery charge, or even energy scavenged from the surroundings. This work is focused on the design of ultra-low power receiver front-ends intended for a receiver operating in the 2.4GHz ISM band, having an active power consumption of 1mW and chip area of 1mm². Low power consumption and small size make it hard to achieve good sensitivity and tolerance to interference. This thesis starts with an introduction to the overall receiver specifications, low power radio and radio standards, front-end and LO generation architectures and building blocks, followed by the four included papers. Paper I demonstrates an inductorless front-end operating at 915MHz, including a frequency divider for quadrature LO generation. An LO generator operating at 2.4GHz is shown in Paper II, enabling a front-end operating above 2GHz. Papers III and IV contain circuits with combined front-end and LO generator operating at or above the full 2.45GHz target frequency. They use VCO and frequency divider topologies that offer efficient operation and low quadrature error. An efficient passive-mixer design with improved suppression of interference, enables an LNA-less design in Paper IV capable of operating without a SAW-filter