Letter from the Special Issue Editor

Editorial work for DEBULL on a special issue on data management on Storage Class Memory (SCM) technologies

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Extending Memory Capacity in Consumer Devices with Emerging Non-Volatile Memory: An Experimental Study

The number and diversity of consumer devices are growing rapidly, alongside their target applications' memory consumption. Unfortunately, DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices. As a potential solution, manufacturers have introduced emerging non-volatile memories (NVMs) into the market, which can be used to increase the memory capacity of consumer devices by augmenting or replacing DRAM. Since entirely replacing DRAM with NVM in consumer devices imposes large system integration and design challenges, recent works propose extending the total main memory space available to applications by using NVM as swap space for DRAM. However, no prior work analyzes the implications of enabling a real NVM-based swap space in real consumer devices. In this work, we provide the first analysis of the impact of extending the main memory space of consumer devices using off-the-shelf NVMs. We extensively examine system performance and energy consumption when the NVM device is used as swap space for DRAM main memory to effectively extend the main memory capacity. For our analyses, we equip real web-based Chromebook computers with the Intel Optane SSD, which is a state-of-the-art low-latency NVM-based SSD device. We compare the performance and energy consumption of interactive workloads running on our Chromebook with NVM-based swap space, where the Intel Optane SSD capacity is used as swap space to extend main memory capacity, against two state-of-the-art systems: (i) a baseline system with double the amount of DRAM than the system with the NVM-based swap space; and (ii) a system where the Intel Optane SSD is naively replaced with a state-of-the-art (yet slower) off-the-shelf NAND-flash-based SSD, which we use as a swap space of equivalent size as the NVM-based swap space

Improving Storage Performance with Non-Volatile Memory-based Caching Systems

University of Minnesota Ph.D. dissertation. April 2017. Major: Computer Science. Advisor: David Du. 1 computer file (PDF); ix, 104 pages.With the rapid development of new types of non-volatile memory (NVRAM), e.g., 3D Xpoint, NVDIMM, and STT-MRAM, these technologies have been or will be integrated into current computer systems to work together with traditional DRAM. Compared with DRAM, which can cause data loss when the power fails or the system crashes, NVRAM's non-volatile nature makes it a better candidate as caching material. In the meantime, storage performance needs to keep up to process and accommodate the rapidly generated amounts of data around the world (a.k.a the big data problem). Throughout my Ph.D. research, I have been focusing on building novel NVRAM-based caching systems to provide cost-effective ways to improve storage system performance. To show the benefits of designing novel NVRAM-based caching systems, I target four representative storage devices and systems: solid state drives (SSDs), hard disk drives (HDDs), disk arrays, and high-performance computing (HPC) parallel file systems (PFSs). For SSDs, to mitigate their wear out problem and extend their lifespan, we propose two NVRAM-based buffer cache policies which can work together in different layers to maximally reduce SSD write traffic: a main memory buffer cache design named Hierarchical Adaptive Replacement Cache (H-ARC) and an internal SSD write buffer design named Write Traffic Reduction Buffer (WRB). H-ARC considers four factors (dirty, clean, recency, and frequency) to reduce write traffic and improve cache hit ratios in the host. WRB reduces block erasures and write traffic further inside an SSD by effectively exploiting temporal and spatial localities. For HDDs, to exploit their fast sequential access speed to improve I/O throughput, we propose a buffer cache policy, named I/O-Cache, that regroups and synchronizes long sets of consecutive dirty pages to take advantage of HDDs' fast sequential access speed and the non-volatile property of NVRAM. In addition, our new policy can dynamically separate the whole cache into a dirty cache and a clean cache, according to the characteristics of the workload, to decrease storage writes. For disk arrays, although numerous cache policies have been proposed, most are either targeted at main memory buffer caches or manage NVRAM as write buffers and separately manage DRAM as read caches. To the best of our knowledge, cooperative hybrid volatile and non-volatile memory buffer cache policies specifically designed for storage systems using newer NVRAM technologies have not been well studied. Based on our elaborate study of storage server block I/O traces, we propose a novel cooperative HybrId NVRAM and DRAM Buffer cACHe polIcy for storage arrays, named Hibachi. Hibachi treats read cache hits and write cache hits differently to maximize cache hit rates and judiciously adjusts the clean and the dirty cache sizes to capture workloads' tendencies. In addition, it converts random writes to sequential writes for high disk write throughput and further exploits storage server I/O workload characteristics to improve read performance. For modern complex HPC systems (e.g., supercomputers), data generated during checkpointing are bursty and so dominate HPC I/O traffic that relying solely on PFSs will slow down the whole HPC system. In order to increase HPC checkpointing speed, we propose an NVRAM-based burst buffer coordination system for PFSs, named collaborative distributed burst buffer (CDBB). Inspired by our observations of HPC application execution patterns and experimentations on HPC clusters, we design CDBB to coordinate all the available burst buffers, based on their priorities and states, to help overburdened burst buffers and maximize resource utilization

異種の不揮発性メモリで構成される半導体ストレージシステムに関する研究

【学位授与の要件】中央大学学位規則第4条第1項【論文審査委員主査】竹内　健　（中央大学理工学部教授）【論文審査委員副査】山村　清隆（中央大学理工学部教授）、築山　修治（中央大学理工学部教授）、首藤　一幸（東京工業大学大学院情報理工学研究科准教授）博士（工学）中央大

Survey on Deduplication Techniques in Flash-Based Storage

Data deduplication importance is growing with the growth of data volumes. The domain of data deduplication is in active development. Recently it was influenced by appearance of Solid State Drive. This new type of disk has significant differences from random access memory and hard disk drives and is widely used now. In this paper we propose a novel taxonomy which reflects the main issues related to deduplication in Solid State Drive. We present a survey on deduplication techniques focusing on flash-based storage. We also describe several Open Source tools implementing data deduplication and briefly describe open research problems related to data deduplication in flash-based storage systems