A power efficient 2Gb/s transceiver in 90nm CMOS for 10mm On-Chip interconnect

Global on-chip data communication is becoming a concern as the gap between transistor speed and interconnect bandwidth increases with CMOS process scaling. In this paper a low-swing transceiver for 10mm long 0.54μm wide on-chip interconnect is presented, which achieves a similar data rate as previous designs (a few Gb/s), but at much lower power than recently published work. Both low static power and low dynamic power (low energy per bit) is aimed for. A capacitive pre-emphasis transmitter lowers the voltage swing and increases the bandwidth using a simple inverter based transceiver and capacitive coupling to the interconnect. The receiver uses Decision Feedback Equalization with a power-efficient continuous-time feedback filter. A low power latch-type voltage sense amplifier is used. The transceiver, fabricated in a 1.2V 90nm CMOS process, achieves 2Gb/s. It consumes only 0.28pJ/b, which is 7 times lower than earlier work

40.4fJ/bit/mm Low-Swing On-Chip Signaling with Self-Resetting Logic Repeaters Embedded within a Mesh NoC in 45nm SOI CMOS

Mesh NoCs are the most widely-used fabric in high-performance many-core chips today. They are, however, becoming increasingly power-constrained with the higher on-chip bandwidth requirements of high-performance SoCs. In particular, the physical datapath of a mesh NoC consumes significant energy. Low-swing signaling circuit techniques can substantially reduce the NoC datapath energy, but existing low-swing circuits involve huge area footprints, unreliable signaling or considerable system overheads such as an additional supply voltage, so embedding them into a mesh datapath is not attractive. In this paper, we propose a novel low-swing signaling circuit, a self-resetting logic repeater, to meet these design challenges. The SRLR enables single-ended low-swing pulses to be asynchronously repeated, and hence, consumes less energy than differential, clocked low-swing signaling. To mitigate global process variations while delivering high energy efficiency, three circuit techniques are incorporated. Fabricated in 45nm SOI CMOS, our 10mm SRLR-based low-swing datapath achieves 6.83Gb/s/µm bandwidth density with 40.4fJ/bit/mm energy at 4.1Gb/s data rate at 0.8V.United States. Defense Advanced Research Projects Agency. The Ubiquitous High-Performance Computing Progra

Low-swing signaling for energy efficient on-chip networks

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p. 65-69).On-chip networks have emerged as a scalable and high-bandwidth communication fabric in many-core processor chips. However, the energy consumption of these networks is becoming comparable to that of computation cores, making further scaling of core counts difficult. This thesis makes several contributions to low-swing signaling circuit design for the energy efficient on-chip networks in two separate projects: on-chip networks optimized for one-to-many multicasts and broadcasts, and link designs that allow on-chip networks to approach an ideal interconnection fabric. A low-swing crossbar switch, which is based on tri-state Reduced-Swing Drivers (RSDs), is presented for the first project. Measurement results of its test chip fabricated in 45nm SOI CMOS show that the tri-state RSD-based crossbar enables 55% power savings as compared to an equivalent full-swing crossbar and link. Also, the measurement results show that the proposed crossbar allows the broadcast-optimized on-chip networks using a single pipeline stage for physical data transmission to operate at 21% higher data rate, when compared with the full-swing networks. For the second project, two clockless low-swing repeaters, a Self-Resetting Logic Repeater (SRLR) and a Voltage-Locked Repeater (VLR), have been proposed and analyzed in simulation only. They both require no reference clock, differential signaling, and bias current. Such digital-intensive properties enable them to approach energy and delay performance of a point-to-point interconnect of variable lengths. Simulated in 45nm SOI CMOS, the 10mm SRLR featured with high energy efficiency consumes 338fJ/b at 5.4Gb/s/ch while the 10mm VLR raises its data rate up to 16.OGb/s/ch with 427fJ/b.by Sunghyun Park.S.M

High-Speed and Low-Energy On-Chip Communication Circuits.

Continuous technology scaling sharply reduces transistor delays, while fixed-length global wire delays have increased due to less wiring pitch with higher resistance and coupling capacitance. Due to this ever growing gap, long on-chip interconnects pose well-known latency, bandwidth, and energy challenges to high-performance VLSI systems. Repeaters effectively mitigate wire RC effects but do little to improve their energy costs. Moreover, the increased complexity and high level of integration requires higher wire densities, worsening crosstalk noise and power consumption of conventionally repeated interconnects. Such increasing concerns in global on-chip wires motivate circuits to improve wire performance and energy while reducing the number of repeaters. This work presents circuit techniques and investigation for high-performance and energy-efficient on-chip communication in the aspects of encoding, data compression, self-timed current injection, signal pre-emphasis, low-swing signaling, and technology mapping. The improved bus designs also consider the constraints of robust operation and performance/energy gains across process corners and design space. Measurement results from 5mm links on 65nm and 90nm prototype chips validate 2.5-3X improvement in energy-delay product.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/75800/1/jseo_1.pd

Design Techniques for Energy Efficient Multi-GB/S Serial I/O Transceivers

Total I/O bandwidth demand is growing in high-performance systems due to the emergence of many-core microprocessors and in mobile devices to support the next generation of multi-media features. High-speed serial I/O energy efficiency must improve in order to enable continued scaling of these parallel computing platforms in applications ranging from data centers to smart mobile devices. The first work, a low-power forwarded-clock I/O transceiver architecture is presented that employs a high degree of output/input multiplexing, supply-voltage scaling with data rate, and low-voltage circuit techniques to enable low-power operation. The transmitter utilizes a 4:1 output multiplexing voltage-mode driver along with 4-phase clocking that is efficiently generated from a passive poly-phase filter. The output driver voltage swing is accurately controlled from 100-200 mV_(ppd) using a low-voltage pseudo-differential regulator that employs a partial negative-resistance load for improved low frequency gain. 1:8 input de-multiplexing is performed at the receiver equalizer output with 8 parallel input samplers clocked from an 8-phase injection-locked oscillator that provides more than 1UI de-skew range. Low-power high-speed serial I/O transmitters which include equalization to compensate for channel frequency dependent loss are required to meet the aggressive link energy efficiency targets of future systems. The second work presents a low power serial link transmitter design that utilizes an output stage which combines a voltage-mode driver, which offers low static-power dissipation, and current-mode equalization, which offers low complexity and dynamic-power dissipation. The utilization of current-mode equalization decouples the equalization settings and termination impedance, allowing for a significant reduction in pre-driver complexity relative to segmented voltage-mode drivers. Proper transmitter series termination is set with an impedance control loop which adjusts the on-resistance of the output transistors in the driver voltage-mode portion. Further reductions in dynamic power dissipation are achieved through scaling the serializer and local clock distribution supply with data rate. Finally, it presents that a scalable quarter-rate transmitter employs an analog-controlled impedance-modulated 2-tap voltage-mode equalizer and achieves fast power-state transitioning with a replica-biased regulator and ILO clock generation. Capacitively-driven 2 mm global clock distribution and automatic phase calibration allows for aggressive supply scaling

Design of Energy-Efficient A/D Converters with Partial Embedded Equalization for High-Speed Wireline Receiver Applications

As the data rates of wireline communication links increases, channel impairments such as skin effect, dielectric loss, fiber dispersion, reflections and cross-talk become more pronounced. This warrants more interest in analog-to-digital converter (ADC)-based serial link receivers, as they allow for more complex and flexible back-end digital signal processing (DSP) relative to binary or mixed-signal receivers. Utilizing this back-end DSP allows for complex digital equalization and more bandwidth-efficient modulation schemes, while also displaying reduced process/voltage/temperature (PVT) sensitivity. Furthermore, these architectures offer straightforward design translation and can directly leverage the area and power scaling offered by new CMOS technology nodes. However, the power consumption of the ADC front-end and subsequent digital signal processing is a major issue. Embedding partial equalization inside the front-end ADC can potentially result in lowering the complexity of back-end DSP and/or decreasing the ADC resolution requirement, which results in a more energy-effcient receiver. This dissertation presents efficient implementations for multi-GS/s time-interleaved ADCs with partial embedded equalization. First prototype details a 6b 1.6GS/s ADC with a novel embedded redundant-cycle 1-tap DFE structure in 90nm CMOS. The other two prototypes explain more complex 6b 10GS/s ADCs with efficiently embedded feed-forward equalization (FFE) and decision feedback equalization (DFE) in 65nm CMOS. Leveraging a time-interleaved successive approximation ADC architecture, new structures for embedded DFE and FFE are proposed with low power/area overhead. Measurement results over FR4 channels verify the effectiveness of proposed embedded equalization schemes. The comparison of fabricated prototypes against state-of-the-art general-purpose ADCs at similar speed/resolution range shows comparable performances, while the proposed architectures include embedded equalization as well

Wireline equalization using pulse-width modulation

Abstract-High-speed data links over copper cables can be effectively equalized using pulse-width modulation (PWM) pre-emphasis. This provides an alternative to the usual 2-tap FIR filters. The use of PWM pre-emphasis allows a channel loss at the Nyquist frequency of ~30dB, compared to ~20dB for a 2-tap symbol-spaced FIR filter. The use of PWM fits well with future high-speed low-voltage CMOS processes. The filter has only one ‘knob’, which is the duty-cycle. This makes convergence of an algorithm for automatic adaptation straightforward. Spectral analysis illustrates that, compared to a 2-tap FIR filter, the steeper PWM filter transfer function fits better to the copper channel. This applies to both half-symbol-spaced and symbol-spaced 2-tap FIR filters. Circuits for implementation are as straightforward as for FIR pre-emphasis. In this paper new measurements are presented for a previous transmitter chip, and a new high-swing transmitter chip is presented. Both coaxial and differential cables are used for the tests. A bit rate of 5 Gb/s (2-PAM) was achieved with all cable assemblies, over a cable length of up to 130 m. Measured BER at this speed is <10-12

A novel low-swing voltage driver design and the analysis of its robustness to the effects of process variation and external disturbances

arket forces are continually demanding devices with increased functionality/unit area; these demands have been satisfied through aggressive technology scaling which, unfortunately, has impacted adversely on the global interconnect delay subsequently reducing system performance. Line drivers have been used to mitigate the problems with delay; however, these have a large power consumption. A solution to reducing the power dissipation of the drivers is to use lower supply voltages. However, by adopting a lower power supply voltage, the performance of the line drivers for global interconnects is impaired unless low-swing signalling techniques are implemented. Low-swing signalling techniques can provide high speed signalling with low power consumption and hence can be used to drive global on-chip interconnect. Most of the proposed low-swing signalling schemes are immune to noise as they have a good SNR. However, they tend to have a large penalty in area and complexity as they require additional circuitry such as voltage generators and low-Vth devices. Most of the schemes also incorporate multiple Vdd and reference voltages which increase the overall circuit complexity. A diode-connected driver circuit has the best attributes over other low-swing signalling techniques in terms of low power, low delay, good SNR and low area overhead. By incorporating a diode-connected configuration at the output, it can provide high speed signalling due to its high driving capability. However, this configuration also has its limitations as it has issues with its adaptability to process variations, as well as an issue with leakage currents. To address these limitations, two novel driver schemes have been designed, namely, nLVSD and mLVSD, which, additionally, have improvements in performance and power consumption. Comparisons between the proposed schemes with the existing diode-connected driver circuits (MJ and DDC) showed that the nLVSD and mLVSD drivers have approximately 46% and 50% less delay. The name MJ originates from the driver’s designer called Juan A. Montiel-Nelson, while DDC stands for dynamic diode-connected. In terms of power consumption, the nLVSD and mLVSD drivers also produce 43% and 7% improvement. Additionally, the mLVSD driver scheme is the most robust as its SNR is 14 to 44% higher compared to other diode-connected driver circuits. On the other hand, the nLVSD driver has 6% lower SNR compared to the MJ driver, even though it is 19% more robust than the DDC driver. However, since its SNR is still above 1, its improved performance and reduced power consumption, as well other advantages it has over other diode-connected driver circuits can compensate for this limitation. Regarding the robustness to external disturbances, the proposedmdriver circuits are more robust to crosstalk effects as the nLVSD and mLVSD drivers are approximately 35% and 7% more robust than other diode-connected drivers. Furthermore, the mLVSD driver is 5%, 33% and 47% more tolerant to SEUs compared to the nLVSD, MJ and DDC driver circuits respectively, whilst the MJ and DDC drivers are 26% and 40% less tolerant to SEUs iii compared to the nLVSD circuit. A comparison between the four schemes was also undertaken in the presence of ±3σ process and voltage (PV) variations. The analysis indicated that both proposed driver schemes are more robust than other diode-connected driver schemes, namely, the MJ and DDC driver circuits. The MJ driver scheme deviates approximately 18% and 35% more in delay and power consumption compared to the proposed schemes. The DDC driver has approximately 20% and 57% more variations in delay and power consumption in comparison to the proposed schemes. In order to further improve the robustness of the proposed driver circuits against process variation and environmental disturbances, they were further analysed to identify which process variables had the most impact on circuit delay and power consumption, as well as identifying several design techniques to mitigate problems with environmental disturbances. The most significant process parameters to have impact on circuit delay and power consumption were identified to be Vdd, tox, Vth, s, w and t. The impact of SEUs on the circuit can be reduced by increasing the bias currents whilst design methods such as increasing the interconnect spacing can help improve the circuit robustness against crosstalk. Overall it is considered that the proposed nLVSD and mLVSD circuits advance the state of the art in driver design for on-chip signalling applications.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

High Peformance and Low Power On-Die Interconnect Fabrics.

Increasing power density with technology scaling has caused stagnation in operating frequency of modern day microprocessors. This has led designers to prefer multicore architectures over complex monolithic processors to keep up with the demand for rising computing throughput. Although processing units are getting smaller and simpler, the dramatic rise of their count on a single die has made the fabric that connects these processing units increasingly complex. These interconnect fabrics have become a bottleneck in improving overall system effciency. As a result, the design paradigm for multi-core chips is gradually shifting from a core-centric architecture towards an interconnect-centric architecture, where system efficiency is limited by the fabric rather than the processing ability of any individual core. This dissertation introduces three novel and synergistic circuit techniques to improve scalability of switch fabrics to make on-die integration of hundreds to thousands of cores feasible. 1) A matrix topology is proposed for designing a fully connected switch fabric that re-uses output buses for programming, and stores shue congurations at cross points. This significantly reduces routing congestion, lowers area/power, and improves per- formance. Silicon measurements demonstrate 47% energy savings in a 64-lane SIMD processor fabricated in 65nm CMOS over a conventional implementation. 2) A novel approach to handle high radix arbitration along with data routing is proposed. It optimally uses existing cross-bar interconnect resources without requiring any additional overhead. Bandwidth exceeding 2Tb/s is recorded in a test prototype fabricated in 65nm. 3) Building on the later, a new circuit topology to manage and update priority adaptively within the switch fabric without incurring additional delay or area is then proposed. Several assist circuit techniques, such as a thyristor based sense amplifier and self regenerating bi-directional repeaters are proposed for high speed energy efficient signaling to and from the switch fabric to improve overall routing efficiency. Using these techniques a 64 x 64 switch fabric with 128b data bus fabricated in 45nm achieves a throughput of 4.5Tb/s at single cycle latency while operating at 559MHz.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91506/1/sudhirks_1.pd