Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems

The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. Several research and industrial organizations are aiming towards 400 Gb Ethernet and beyond, which brings new challenges to the field of high-speed broadband electronic circuit design. Replacing OOK with higher M-ary modulation formats and using higher datarates increases network capacity but at the cost of power. With datacenters rapidly becoming significant energy consumers on the global scale, the energy efficiency of the optical interconnect transceivers takes a primary role in the development of novel systems. There are several additional challenges unique in the design of a broadband shortreach fiber-optical receiver system. The sensitivity of the receiver depends on the noise performance of the PD and the electronics. The overall system noise must be optimized for the specific application, modulation scheme, PD and VCSEL characteristics. The topology of the transimpedance amplifier affects the noise and frequency response of the PD, so the system must be optimized as a whole. Most state-of-the-art receivers are built on high-end semiconductor SiGe and InP technologies. However, there are still several design decisions to be made in order to get low noise, high energy efficiency and adequate bandwidth. In order to overcome the frequency limitations of the optoelectronic components, bandwidth enhancement and channel equalization techniques are used. In this work several different blocks of a receiver system are designed and characterized. A broadband, 50 GHz bandwidth CB-based TIA and a tunable gain equalizer are designed in a 130 nm SiGe BiCMOS process. An ultra-broadband traveling wave amplifier is presented, based on a 250 nm InP DHBT technology demonstrating a 207 GHz bandwidth. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback, based on a 130 nm InP DHBT technology are designed and compared

SiGe EAM-based transceivers for datacenter interconnects and radio over fiber

Silicon photonics is a key-enabling technology leveraging decades of effort and infrastructure of the microelectronics CMOS industry resulting in high yield, low cost and potential high volume manufacturing. Furthermore, due to the high index contrast of the platform, very compact, high-complexity photonic integrated circuits can be devised. To benefit from these advantages, high-speed modulators should also be compatible with silicon technology. In this respect, SiGe electro-absorption modulators (EAM) are considered as a promising candidate since they are CMOS-compatible and offer high-speed, compact, low-loss and low-power modulation. In this paper, we discuss SiGe EAM-based transceivers for next-generation datacenter interconnects (DCI) and radio-over-fiber (RoF) fronthaul in next-generation cellular networks

Investigation of High-Speed Optoelectronic Receivers in Silicon-Germanium (SiGe)

Silicon Germanium (Si1-xGex) is considered the choice for analog/mixed-signal RF and optoelectronic systems due to its high speed, low noise and compatibility with standard CMOS processes. The goal of this thesis is to investigate photo-detection in SiGe and optical receiver circuits in the commercially available IBM 5HP SiGe BiCMOS process. The study of photodetectors based on SiGe is of interest because of its high absorption capability at wavelengths between 1.1-1.5um. In this thesis several designs of receiver circuits and front-end transimpedance amplifiers (TIA) were designed and fabricated in the IBM 5HP (0.5µm) SiGe technology exhibiting high transit (fT) and maximum oscillation frequency (fMAX). Spectre simulations for both the transimpedance amplifiers and the complete receiver circuits are conducted at the single supply voltage of 3.3V in the Cadence Analog Affirma design environment. The analog mixed signal design tools NeoCircuit/NeoCell from Neolinear Inc. and Analog Affirma from Cadence Inc. are used for the optimization of the complete receiver circuits consisting of a transimpedance amplifier, a cascaded multi-stage differential amplifier and a decision circuit

Design and experimental verification of a transimpedance amplifier for 64-Gb/s PAM-4 optical links

The use of four-level pulse-amplitude modulation (PAM-4) has emerged as a solution to increase the serial rate in short-range optical links, offering twice the data throughput but requiring similar bandwidth as on-off keying. However, the receiver design should take into account the increased susceptibility of PAM-4 to noise, intersymbol interference, and nonlinearity. This papers explores these challenges, and details the design of a transimpedance amplifier (TIA) for 64-Gb/s PAM-4 optical links. The TIA was implemented in 0.13-mu m SiGe BiCMOS, and has a power consumption of 180 mW. It contains a digital gain controller, which allows switching between four gain modes, to tradeoff sensitivity against linearity. Bit error rate (BER) measurements show that the dynamic range is significantly extended: Optical modulation amplitudes between -7 dBm and at least -0.2 dBm yield a BER lower than 10(-3)

Center for Space Microelectronics Technology. 1993 Technical Report

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents