61 research outputs found
A Transient Enhanced Capacitor-less Low dropout Regulator Using 180nm CMOS technology
Demand for system on-chip (SoC) designs and portable electronics has risen quickly in recent years. The dual loop architecture serves as the foundation for the capacitorless LDO described in this research. In order to overcome the difficulties in establishing stability, including quick transient performance and minimal voltage spikes under rapid loadcurrent fluctuations, the regulator uses two feedback loops. The suggested design runs with a 0-100 pF capacitive load and does not require a decoupling capacitor to be placed at the output. A 0.18 µm CMOS technology is used for performing the simulations on the design. The Capacitor-less LDO is given an input voltage of 1.0 - 1.4V, and it gives an output of 0.9 V. Line and Load Regulation obtained are 0.821 mV/V and 0.1122 mA/V respectively. The Capacitor-less LDO has a phase margin of 87.55o , making it more stable whereas phase margin of Conventional LDO is just 43.78o . The transient response of Capacitor less LDO is enhanced succesfully. The overshoot and undershoot of the Capacitorless LDO are 16.38 mV and 16.9 mV respectively while the conventional LDO shows 27 mV and 33.6 mV respectively. Settling time of Capacitor-less LDO is 1.54 µs, which is much better than settling time of conventional LDO, which is 8 µ
A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications
This paper presents an output capacitor-less low-dropout regulator (LDO) with
a bias switching scheme for biomedical applications with dual-range load
currents. Power optimization is crucial for systems with multiple activation
modes such as neural interfaces, IoT and edge devices with varying load
currents. To enable rapid switching between low and high current states, a
flipped voltage follower (FVF) configuration is utilized, along with a super
source follower buffer to drive the power transistor. Two feedback loops and an
on-chip compensation capacitor Cc maintain the stability of the regulator under
various load conditions. The LDO was implemented in a 65nm CMOS process with
1.5V input and 1.2V output voltages. The measured quiescent current is as low
as 3uA and 50uA for the 0-500uA and 5-15mA load current ranges, respectively.
An undershoot voltage of 100mV is observed when the load current switches from
0 to 15mA within 80ns, with a maximum current efficiency of 99.98%. Our design
achieved a low Figure-of-Merit of 0.21ps, outperforming state-of-the-art analog
LDOs
Design consideration in low dropout voltage regulator for batteryless power management unit
Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology
FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation
A new internally compensated low drop-out voltage
regulator based on the cascoded flipped voltage follower is
presented in this paper. Adaptive biasing current and fast
charging/discharging paths have been added to rapidly
charge and discharge the parasitic capacitance of the pass
transistor gate, thus improving the transient response. The
proposed regulator was designed with standard 65-nm
CMOS technology. Measurements show load and line
regulations of 433.80 μV/mA and 5.61 mV/V, respectively.
Furthermore, the output voltage spikes are kept under
76 mV for 0.1 mA to 100 mA load variations and 0.9 V to
1.2 V line variations with rise and fall times of 1 μs. The
total current consumption is 17.88 μA (for a 0.9 V supply
voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186
Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies
Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC
allows various small and large electronic systems to be implemented in a single chip. This
approach enables the miniaturization of design blocks that leads to high density transistor
integration, faster response time, and lower fabrication costs. To reap the benefits of SOC
and uphold the miniaturization of transistors, innovative power delivery and power
dissipation management schemes are paramount. This dissertation focuses on on-chip
integration of power delivery systems and managing power dissipation to increase the
lifetime of energy storage elements. We explore this problem from two different angels:
On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce
parasitic effects, and allow faster and efficient power delivery for microprocessors. Power
gating techniques, on the other hand, reduce the power loss incurred by circuit blocks
during standby mode.
Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide
semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic
dependency on the dynamic switching power and a more than linear dependency on static
power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power
loss, the supply power should be reduced. A significant reduction in power dissipation
occurs when portions of a microprocessor operate at a lower voltage level. This reduction
in supply voltage is achieved via voltage regulators or converters. Voltage regulators are
used to provide a stable power supply to the microprocessor. The conventional off-chip
switching voltage regulator contains a passive floating inductor, which is difficult to be
implemented inside the chip due to excessive power dissipation and parasitic effects.
Additionally, the inductor takes a very large chip area while hampering the scaling process.
These limitations make passive inductor based on-chip regulator design very unattractive
for SOC integration and multi-/many-core environments. To circumvent the challenges,
three alternative techniques based on active circuit elements to replace the passive LC filter
of the buck convertor are developed. The first inductorless on-chip switching voltage
regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass
filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse
with modulation (PWM). The second approach is a supplementary design utilizing a hybrid
low drop-out scheme to lower the output ripple of the switching regulator over a wider
frequency range. The third design approach allows the integration of an entire power
management system within a single chipset by combining a highly efficient switching
regulator with an intermittently efficient linear regulator (area efficient), for robust and
highly efficient on-chip regulation.
The static power (Pstatic) or subthreshold leakage power (Pleak) increases with
technology scaling. To mitigate static power dissipation, power gating techniques are
implemented. Power gating is one of the popular methods to manage leakage power during
standby periods in low-power high-speed IC design. It works by using transistor based
switches to shut down part of the circuit block and put them in the idle mode. The efficiency
of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A
conventional sleep transistor circuit design requires an additional header, footer, or both
switches to turn off the logic block. This additional transistor causes signal delay and
increases the chip area. We propose two innovative designs for next generation sleep
transistor designs. For an above threshold operation, we present a sleep transistor design
based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit
operation, we implement a sleep transistor utilizing the newly developed silicon-on
ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability
to control the threshold voltage via bias voltage at the back gate makes both devices more
flexible for sleep transistors design than a bulk MOSFET. The proposed approaches
simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep
transistor, and improve power dissipation. In addition, the design provides a dynamically
controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio
High Performance Power Management Integrated Circuits for Portable Devices
abstract: Portable devices often require multiple power management IC (PMIC) to power different sub-modules, Li-ion batteries are well suited for portable devices because of its small size, high energy density and long life cycle. Since Li-ion battery is the major power source for portable device, fast and high-efficiency battery charging solution has become a major requirement in portable device application.
In the first part of dissertation, a high performance Li-ion switching battery charger is proposed. Cascaded two loop (CTL) control architecture is used for seamless CC-CV transition, time based technique is utilized to minimize controller area and power consumption. Time domain controller is implemented by using voltage controlled oscillator (VCO) and voltage controlled delay line (VCDL). Several efficiency improvement techniques such as segmented power-FET, quasi-zero voltage switching (QZVS) and switching frequency reduction are proposed. The proposed switching battery charger is able to provide maximum 2 A charging current and has an peak efficiency of 93.3%. By configure the charger as boost converter, the charger is able to provide maximum 1.5 A charging current while achieving 96.3% peak efficiency.
The second part of dissertation presents a digital low dropout regulator (DLDO) for system on a chip (SoC) in portable devices application. The proposed DLDO achieve fast transient settling time, lower undershoot/overshoot and higher PSR performance compared to state of the art. By having a good PSR performance, the proposed DLDO is able to power mixed signal load. To achieve a fast load transient response, a load transient detector (LTD) enables boost mode operation of the digital PI controller. The boost mode operation achieves sub microsecond settling time, and reduces the settling time by 50% to 250 ns, undershoot/overshoot by 35% to 250 mV and 17% to 125 mV without compromising the system stability.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201
ULTRA LOW POWER FSK RECEIVER AND RF ENERGY HARVESTER
This thesis focuses on low power receiver design and energy harvesting techniques as methods for intelligently managing energy usage and energy sources. The goal is to build an inexhaustibly powered communication system that can be widely applied, such as through wireless sensor networks (WSNs). Low power circuit design and smart power management are techniques that are often used to extend the lifetime of such mobile devices. Both methods are utilized here to optimize power usage and sources.
RF energy is a promising ambient energy source that is widely available in urban areas and which we investigate in detail. A harvester circuit is modeled and analyzed in detail at low power input. Based on the circuit analysis, a design procedure is given for a narrowband energy harvester. The antenna and harvester co-design methodology improves RF to DC energy conversion efficiency. The strategy of co-design of the antenna and the harvester creates opportunities to optimize the system power conversion efficiency. Previous surveys have found that ambient RF energy is spread broadly over the frequency domain; however, here it is demonstrated that it is theoretically impossible to harvest RF energy over a wide frequency band if the ambient RF energy source(s) are weak, owing to the voltage requirements. It is found that most of the ambient RF energy lies in a series of narrow bands.
Two different versions of harvesters have been designed, fabricated, and tested. The simulated and measured results demonstrate a dual-band energy harvester that obtains over 9% efficiency for two different bands (900MHz and 1800MHz) at an input power as low as -19dBm. The DC output voltage of this harvester is over 1V, which can be used to recharge the battery to form an inexhaustibly powered communication system.
A new phase locked loop based receiver architecture is developed to avoid the significant conversion losses associated with OOK architectures. This also helps to minimize power consumption. A new low power mixer circuit has also been designed, and a detailed analysis is provided. Based on the mixer, a low power phase locked loop (PLL) based receiver has been designed, fabricated and measured.
A power management circuit and a low power transceiver system have also been co-designed to provide a system on chip solution. The low power voltage regulator is designed to handle a variety of battery voltage, environmental temperature, and load conditions. The whole system can work with a battery and an application specific integrated circuit (ASIC) as a sensor node of a WSN network
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