Delay Extraction Based Equivalent Elmore Model For RLC On-Chip Interconnects

As feature sizes for VLSI technology is shrinking, associated with higher operating frequency, signal integrity analysis of on-chip interconnects has become a real challenge for circuit designers. For this purpose, computer-aided-design (CAD) tools are necessary to simulate signal propagation of on-chip interconnects which has been an active area for research. Although SPICE models exist which can accurately predict signal degradation of interconnects, they are computationally expensive. As a result, more effective and analytic models for interconnects are required to capture the response at the output of high speed VLSI circuits. This thesis contributes to the development of efficient and closed form solution models for signal integrity analysis of on-chip interconnects. The proposed model uses a delay extraction algorithm to improve the accuracy of two-pole Elmore based models used in the analysis of on-chip distributed RLC interconnects. In the proposed scheme, the time of fight signal delay is extracted without increasing the number of poles or affecting the stability of the transfer function. This algorithm is used for both unit step and ramp inputs. From the delay rational approximation of the transfer function, analytic fitted expressions are obtained for the 50% delay and rise time for unit step input. The proposed algorithm is tested on point to point interconnections and tree structure networks. Numerical examples illustrate improved 50% delay and rise time estimates when compared to traditional Elmore based two-pole models

Modeling and Analysis of Noise and Interconnects for On-Chip Communication Link Design

This thesis considers modeling and analysis of noise and interconnects in onchip communication. Besides transistor count and speed, the capabilities of a modern design are often limited by on-chip communication links. These links typically consist of multiple interconnects that run parallel to each other for long distances between functional or memory blocks. Due to the scaling of technology, the interconnects have considerable electrical parasitics that affect their performance, power dissipation and signal integrity. Furthermore, because of electromagnetic coupling, the interconnects in the link need to be considered as an interacting group instead of as isolated signal paths. There is a need for accurate and computationally effective models in the early stages of the chip design process to assess or optimize issues affecting these interconnects. For this purpose, a set of analytical models is developed for on-chip data links in this thesis. First, a model is proposed for modeling crosstalk and intersymbol interference. The model takes into account the effects of inductance, initial states and bit sequences. Intersymbol interference is shown to affect crosstalk voltage and propagation delay depending on bus throughput and the amount of inductance. Next, a model is proposed for the switching current of a coupled bus. The model is combined with an existing model to evaluate power supply noise. The model is then applied to reduce both functional crosstalk and power supply noise caused by a bus as a trade-off with time. The proposed reduction method is shown to be effective in reducing long-range crosstalk noise. The effects of process variation on encoded signaling are then modeled. In encoded signaling, the input signals to a bus are encoded using additional signaling circuitry. The proposed model includes variation in both the signaling circuitry and in the wires to calculate the total delay variation of a bus. The model is applied to study level-encoded dual-rail and 1-of-4 signaling. In addition to regular voltage-mode and encoded voltage-mode signaling, current-mode signaling is a promising technique for global communication. A model for energy dissipation in RLC current-mode signaling is proposed in the thesis. The energy is derived separately for the driver, wire and receiver termination.Siirretty Doriast

Analytic Delay Model of RLC Interconnects using Numerical Inversion of the Laplace Transform

Signal integrity analysis for on-chip interconnect becomes increasingly important in high-speed designs. SPICE, a conventional circuit simulator, can provide accurate prediction for interconnects, however, using SPICE is extremely computationally expensive. On the other hand, explicit moment matching technique can produce unstable poles for highly accurate approximations and implicit moment matching technique can obtain more accurate approximations at the expense of computational complexity. This thesis presents an analytic model to efficiently estimate the signal delays of RLC on-chip interconnects. It uses the numerical inversion of Laplace transform (NILT) to obtain time function, suitable for transient analysis. Since the integration formula of the NILT is numerically stable for higher order approximations, the developed algorithm provides a mechanism to increase the accuracy for delay estimation. Numerical examples are implemented and compared with HSPICE, two-pole model and Passive Reduced-Order Interconnect Macromodeling Algorithm (PRIMA) to illustrate the efficiency and validity of the proposed work

Analytical and numerical modeling to address signal integrity issues in mixed signal applications

Signal integrity issues are a major concern in highly integrated and compact mixed signal IC\u27s. This work presents a numerical and analytical method for analyzing and assessing signal integrity issues relating to discontinuities, interconnects, and irregularly shaped power planes through the development of two independent methods. To address the coupling issue the finite difference time domain (FDTD) technique has been used, which is an accurate and robust algorithm capable of analyzing an arbitrary geometry in both the frequency and time domains. The analysis of signal integrity issues is carried out using examples such as transmission lines placed in close proximity, co-planar to co-planar transitions, and board level via interconnects. To take advantage of FDTD\u27s ability to work natively in the time domain an analysis of two closely spaced transmission lines made where a series of digital pulses were applied to one transmission line while a low RF power analog signal is present on the other. Using voltage and current extraction techniques the corruption of the RF signal due to the coupling of the digital waveform is obtained. To address the resonances occurring in a power plane cavity excited due to ground/Vdd bounce an analytical method based on a segmentation technique in conjunction with the cavity model with arbitrary port placement has been developed for irregularly shaped power planes. Using this technique the resonant frequencies and noise coupling for irregular power planes can be accurately computed. Some popular power plane configurations such as the L-shaped and rectangular ring shape are considered and comparisons have been made with the equivalent circuit based transmission line matrix (TLM) method, HFSS, and experimental results. A design methodology has also been developed to shape the power planes so that no resonances occur within the frequency range of interest

Investigation of Interconnect and Device Designs for Emerging Post-MOSFET and Beyond Silicon Technologies

Title from PDF of title page viewed May 31, 2017Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (pages 94-108)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2016The integrated circuit industry has been pursuing Moore’s curve down to deep nanoscale dimensions that would lead to the anticipated delivery of 100 billion transistors on a 300 mm² die operating below 1V supply in the next 5-10 years. However, the grand challenge is to reliably and efficiently take the full advantage of the unprecedented computing power offered by the billions of nanoscale transistors on a single chip. To mitigate this challenge, the limitations of both the interconnecting wires and semiconductor devices in integrated circuits have to be addressed. At the interconnect level, the major challenge in current high density integrated circuit is the electromagnetic and electrostatic impacts in the signal carrying lines. Addressing these problems require better analysis of interconnect resistance, inductance, and capacitance. Therefore, this dissertation has proposed a new delay model and analyzed the time-domain output response of complex poles, real poles, and double poles for resistance-inductance capacitance interconnect network based on a second order approximate transfer function. Both analytical models and simulation results show that the real poles model is much faster than the complex poles model, and achieves significantly higher accuracy in order to characterize the overshoot and undershoot of the output responses. On the other hand, the semiconductor industry is anticipating that within a decade silicon devices will be unable to meet the demands at nanoscale due to dimension and material scaling. Recently, molybdenum disulfide (MoS₂) has emerged as a new super material to replace silicon in future semiconductor devices. Besides, conventional field effect transistor technology is also reaching its thermodynamic limit. Breaking this thermal and physical limit requires adoption of new devices based on tunneling mechanism. Keeping the above mentioned trends, this dissertation also proposed a multilayer MoS₂ channel-based tunneling transistor and identifies the fundamental parameters and design specifications that need to be optimized in order to achieve higher ON-currents. A simple analytical model of the proposed device is derived by solving the time-independent Schrodinger equation. It is analytically proven that the proposed device can offer an ON-current of 80 A/m, a subthreshold swing (S) of 9.12 mV/decade, and a / ratio of 10¹².Introduction -- Previous models on interconnect designs -- Proposed delay model for interconnect design -- Investigation of tunneling for field effect transistor -- Study of molybdenum disulfide for FET applications -- Proposed molybdenum disulfide based tunnel transistor -- Conclusion -- Appendix A. Derivation of time delay model -- Appendix B. Derivation of tunneling current model Appendix C. Derivation of subthreshold swing mode