Theory of coherent acoustic phonons in InGaN/GaN multi-quantum wells

A microscopic theory for the generation and propagation of coherent LA phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump laser and is treated theoretically using the density matrix formalism. We use realistic wurzite bandstructures taking valence-band mixing and strain-induced piezo- electric fields into account. In addition, the many-body Coulomb ineraction is treated in the screened time-dependent Hartree-Fock approximation. We find that under typical experimental conditions, our microscopic theory can be simplified and mapped onto a loaded string problem which can be easily solved.Comment: 20 pages, 17 figure

Neutron scattering study of spin ordering and stripe pinning in superconducting La1.93_{1.93}Sr0.07_{0.07}CuO4_4

The relationships among charge order, spin fluctuations, and superconductivity in underdoped cuprates remain controversial. We use neutron scattering techniques to study these phenomena in La$_{1.93}$Sr$_{0.07}$CuO$_4$, a superconductor with a transition temperature of $T_c = 20$~K. At $T\ll T_c$, we find incommensurate spin fluctuations with a quasielastic energy spectrum and no sign of a gap within the energy range from 0.2 to 15 meV. A weak elastic magnetic component grows below $\sim10$~K, consistent with results from local probes. Regarding the atomic lattice, we have discovered unexpectedly strong fluctuations of the CuO$_6$ octahedra about Cu-O bonds, which are associated with inequivalent O sites within the CuO$_2$ planes. Furthermore, we observed a weak elastic $(3\bar{3}0)$ superlattice peak that implies a reduced lattice symmetry. The presence of inequivalent O sites rationalizes various pieces of evidence for charge stripe order in underdoped \lsco. The coexistence of superconductivity with quasi-static spin-stripe order suggests the presence of intertwined orders; however, the rotation of the stripe orientation away from the Cu-O bonds might be connected with evidence for a finite gap at the nodal points of the superconducting gap function.Comment: 13 pages, 11 figures; accepted versio

Electron transport and terahertz gain in quantum-dot cascades

Electron transport through quantum-dot (QD) cascades was investigated using the formalism of nonequilibrium Green's functions within the self-consistent Born approximation. Polar coupling to optical phonons, deformation potential coupling to acoustic phonons, as well as anharmonic decay of longitudinal optical phonons were included in the simulation. A QD cascade laser structure comprising two QDs per period was designed and its characteristics were simulated. Significant values of population inversion enabling lasing in the terahertz frequency range were predicted, with operating current densities being more than an order of magnitude smaller than in existing terahertz quantum-well-based quantum-cascade lasers

Coherent and robust high-fidelity generation of a biexciton in a quantum dot by rapid adiabatic passage

A biexciton in a semiconductor quantum dot is a source of polarization-entangled photons with high potential for implementation in scalable systems. Several approaches for non-resonant, resonant and quasi-resonant biexciton preparation exist, but all have their own disadvantages, for instance low fidelity, timing jitter, incoherence or sensitivity to experimental parameters. We demonstrate a coherent and robust technique to generate a biexciton in an InGaAs quantum dot with a fidelity close to one. The main concept is the application of rapid adiabatic passage to the ground state-exciton-biexciton system. We reinforce our experimental results with simulations which include a microscopic coupling to phonons.Comment: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, accepted as a Rapid Communication in PRB. arXiv admin note: text overlap with arXiv:1701.0130

Engineering and Manipulating Exciton Wave Packets

When a semiconductor absorbs light, the resulting electron-hole superposition amounts to a uncontrolled quantum ripple that eventually degenerates into diffusion. If the conformation of these excitonic superpositions could be engineered, though, they would constitute a new means of transporting information and energy. We show that properly designed laser pulses can be used to create such excitonic wave packets. They can be formed with a prescribed speed, direction and spectral make-up that allows them to be selectively passed, rejected or even dissociated using superlattices. Their coherence also provides a handle for manipulation using active, external controls. Energy and information can be conveniently processed and subsequently removed at a distant site by reversing the original procedure to produce a stimulated emission. The ability to create, manage and remove structured excitons comprises the foundation for opto-excitonic circuits with application to a wide range of quantum information, energy and light-flow technologies. The paradigm is demonstrated using both Tight-Binding and Time-Domain Density Functional Theory simulations.Comment: 16 figure

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among chalcogenide phase-change materials, Ge2Sb2Te5 (GST) is most widely used because of its reliability. We use a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Depending on the parameters of the second pump-pulse, ultrafast nonthermal phase-change occurred within only few-cycles (~ 1 ps) of the coherent motion corresponding to a GeTe4 local vibration. Using the ultrafast switch in chalcogenide alloy memory could lead to a major paradigm shift in memory devices beyond the current generation of silicon-based flash-memory.Comment: 11 pages, 7 figures, accepted for publication in Optics Expres