Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110) heterojunction. In (100)-oriented structures, we find both valence- and conduction-band related near-band edge states localized at the Si/GaAs interface. In the (110) systems, instead, interface states occur deeper in the valence band; the highest valence-related resonances being about 1 eV below the GaAs valence-band maximum. Using their characteristic bonding properties and atomic character, we are able to follow the evolution of the localized states and resonances from the fully developed Si/GaAs binary junction to the ternary GaAs/Si/GaAs (110) systems incorporating 2 or 1 ML of Si. This approach also allows us to show the link between the interface states of the (110) and (100) systems. Finally, the conditions for the existence of localized states at the Si/GaAs (110) interface are discussed based on a Koster-Slater model developed for the interface-state problem.Comment: REVTeX 4, 14 pages, 15 EPS figure

Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica

Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures

We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. (\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as concentric wires. Using a pseudopotential plane-wave calculation, we identified theoretically a set of numbers ($m,n,p$ and $q$) such that charge separation can exist in ``cylindrical Russian Dolls'': the CBM is localized in the inner GaAs layer, while the VBM is localized in the outer GaAs layer.Comment: latex, 8 page

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.Comment: 8 pages, 3 figure

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given

Sequential nature of damage annealing and activation in implanted GaAs

Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomes n- or p-type, or remains semi-insulating, commensurate to the chemical nature of the implanted ion. Such a two-step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors