Surface wave control for large arrays of microwave kinetic inductance detectors

Large ultra-sensitive detector arrays are needed for present and future observatories for far infra-red, submillimeter wave (THz), and millimeter wave astronomy. With increasing array size, it is increasingly important to control stray radiation inside the detector chips themselves, the surface wave. We demonstrate this effect with focal plane arrays of 880 lens-antenna coupled Microwave Kinetic Inductance Detectors (MKIDs). Presented here are near field measurements of the MKID optical response versus the position on the array of a reimaged optical source. We demonstrate that the optical response of a detector in these arrays saturates off-pixel at the $\sim-30$ dB level compared to the peak pixel response. The result is that the power detected from a point source at the pixel position is almost identical to the stray response integrated over the chip area. With such a contribution, it would be impossible to measure extended sources, while the point source sensitivity is degraded due to an increase of the stray loading. However, we show that by incorporating an on-chip stray light absorber, the surface wave contribution is reduced by a factor $>$10. With the on-chip stray light absorber the point source response is close to simulations down to the $\sim-35$ dB level, the simulation based on an ideal Gaussian illumination of the optics. In addition, as a crosscheck we show that the extended source response of a single pixel in the array with the absorbing grid is in agreement with the integral of the point source measurements.Comment: accepted for publication in IEEE Transactions on Terahertz Science and Technolog

Temperature Regulation in Multicore Processors Using Adjustable-Gain Integral Controllers

This paper considers the problem of temperature regulation in multicore processors by dynamic voltage-frequency scaling. We propose a feedback law that is based on an integral controller with adjustable gain, designed for fast tracking convergence in the face of model uncertainties, time-varying plants, and tight computing-timing constraints. Moreover, unlike prior works we consider a nonlinear, time-varying plant model that trades off precision for simple and efficient on-line computations. Cycle-level, full system simulator implementation and evaluation illustrates fast and accurate tracking of given temperature reference values, and compares favorably with fixed-gain controllers.Comment: 8 pages, 6 figures, IEEE Conference on Control Applications 2015, Accepted Versio

Understanding the thermal implications of multicore architectures

Multicore architectures are becoming the main design paradigm for current and future processors. The main reason is that multicore designs provide an effective way of overcoming instruction-level parallelism (ILP) limitations by exploiting thread-level parallelism (TLP). In addition, it is a power and complexity-effective way of taking advantage of the huge number of transistors that can be integrated on a chip. On the other hand, today's higher than ever power densities have made temperature one of the main limitations of microprocessor evolution. Thermal management in multicore architectures is a fairly new area. Some works have addressed dynamic thermal management in bi/quad-core architectures. This work provides insight and explores different alternatives for thermal management in multicore architectures with 16 cores. Schemes employing both energy reduction and activity migration are explored and improvements for thread migration schemes are proposed.Peer ReviewedPostprint (published version

Stably accessing octave-spanning microresonator frequency combs in the soliton regime

Microresonator frequency combs can be an enabling technology for optical frequency synthesis and timekeeping in low size, weight, and power architectures. Such systems require comb operation in low-noise, phase-coherent states such as solitons, with broad spectral bandwidths (e.g., octave-spanning) for self-referencing to detect the carrier-envelope offset frequency. However, stably accessing such states is complicated by thermo-optic dispersion. For example, in the Si3N4 platform, precisely dispersion-engineered structures can support broadband operation, but microsecond thermal time constants have necessitated fast pump power or frequency control to stabilize the solitons. In contrast, here we consider how broadband soliton states can be accessed with simple pump laser frequency tuning, at a rate much slower than the thermal dynamics. We demonstrate octave-spanning soliton frequency combs in Si3N4 microresonators, including the generation of a multi-soliton state with a pump power near 40 mW and a single-soliton state with a pump power near 120 mW. We also develop a simplified two-step analysis to explain how these states are accessed in a thermally stable way without fast control of the pump laser, and outline the required thermal properties for such operation. Our model agrees with experimental results as well as numerical simulations based on a Lugiato-Lefever equation that incorporates thermo-optic dispersion. Moreover, it also explains an experimental observation that a member of an adjacent mode family on the red-detuned side of the pump mode can mitigate the thermal requirements for accessing soliton states

Thermal measurement and modeling of multi-die packages

Thermal measurement and modeling of multi-die packages became a hot topic recently in different fields like RAM chip packaging or LEDs / LED assemblies, resulting in vertical (stacked) and lateral arrangement. In our present study we show results for a mixed arrangement: an opto-coupler device has been investigated with 4 chips in lateral as well as vertical arrangement. In this paper we give an overview of measurement and modeling techniques and results for stacked and MCM structures, describe our present measurement results together with our structure function based methodology of validating the detailed model of the package being studied. Also, we show how to derive junction-to-pin thermal resistances with a technique using structure functions.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature

Micro-fabricated electromagnetic filters for millikelvin experiments

In this article we report on the design, fabrication and tests of micro-fabricated broadband filters suitable for proper electromagnetic thermalization of electrical lines connected to sensitive quantum electronics experiments performed at dilution fridge temperatures. Compared to previous such miniature filters, the new design improves on performance and reliability. These filters can be packed in space-saving cases with either single or multi-contact connectors. Measured performance in the accessible range compares well to simulations. We use these simulations to discuss the effectiveness of these filters for electromagnetic thermalization at 30 mK.Comment: Available at http://www-spht.cea.fr/articles/s06/03

Modeling of thermally induced skew variations in clock distribution network

Clock distribution network is sensitive to large thermal gradients on the die as the performance of both clock buffers and interconnects are affected by temperature. A robust clock network design relies on the accurate analysis of clock skew subject to temperature variations. In this work, we address the problem of thermally induced clock skew modeling in nanometer CMOS technologies. The complex thermal behavior of both buffers and interconnects are taken into account. In addition, our characterization of the temperature effect on buffers and interconnects provides valuable insight to designers about the potential impact of thermal variations on clock networks. The use of industrial standard data format in the interface allows our tool to be easily integrated into existing design flow