A 0.18µm CMOS UWB wireless transceiver for medical sensing applications

Recently, there is a new trend of demand of a biomedical device that can continuously monitor patient’s vital life index such as heart rate variability (HRV) and respiration rate. This desired device would be compact, wearable, wireless, networkable and low-power to enable proactive home monitoring of vital signs. This device should have a radar sensor portion and a wireless communication link all integrated in one small set. The promising technology that can satisfy these requirements is the impulse radio based Ultra-wideband (IR-UWB) technology. Since Federal Communications Commission (FCC) released the 3.1GHz-10.6GHz frequency band for UWB applications in 2002 [1], IR-UWB has received significant attention for applications in target positioning and wireless communications. IR-UWB employs extremely narrow Gaussian monocycle pulses or any other forms of short RF pulses to represent information. In this project, an integrated wireless UWB transceiver for the 3.1GHz-10.6GHz IR-UWB medical sensor was developed in the 0.18µm CMOS technology. This UWB transceiver can be employed for both radar sensing and communication purposes. The transceiver applies the On-Off Keying (OOK) modulation scheme to transmit short Gaussian pulse signals. The transmitter output power level is adjustable. The fully integrated UWB transceiver occupies a core area of 0.752mm^2 and the total die area of 1.274mm^2 with the pad ring inserted. The transceiver was simulated with overall power consumption of 40mW for radar sensing. The receiver is very sensitive to weak signals with a sensitivity of -73.01dBm. The average power of a single pulse is 9.8µW. The pulses are not posing any harm to human tissues. The sensing resolution and the target positioning precision are presumably sufficient for heart movement detection purpose in medical applications. This transceiver can also be used for high speed wireless data communications. The data transmission rate of 200 Mbps was achieved with an overall power consumption of 57mW. A combination of sensing and communications can be used to build a low power sensor

Layout-level Circuit Sizing and Design-for-manufacturability Methods for Embedded RF Passive Circuits

The emergence of multi-band communications standards, and the fast pace of the consumer electronics markets for wireless/cellular applications emphasize the need for fast design closure. In addition, there is a need for electronic product designers to collaborate with manufacturers, gain essential knowledge regarding the manufacturing facilities and the processes, and apply this knowledge during the design process. In this dissertation, efficient layout-level circuit sizing techniques, and methodologies for design-for-manufacturability have been investigated. For cost-effective fabrication of RF modules on emerging technologies, there is a clear need for design cycle time reduction of passive and active RF modules. This is important since new technologies lack extensive design libraries and layout-level electromagnetic (EM) optimization of RF circuits become the major bottleneck for reduced design time. In addition, the design of multi-band RF circuits requires precise control of design specifications that are partially satisfied due to manufacturing variations, resulting in yield loss. In this work, a broadband modeling and a layout-level sizing technique for embedded inductors/capacitors in multilayer substrate has been presented. The methodology employs artificial neural networks to develop a neuro-model for the embedded passives. Secondly, a layout-level sizing technique for RF passive circuits with quasi-lumped embedded inductors and capacitors has been demonstrated. The sizing technique is based on the circuit augmentation technique and a linear optimization framework. In addition, this dissertation presents a layout-level, multi-domain DFM methodology and yield optimization technique for RF circuits for SOP-based wireless applications. The proposed statistical analysis framework is based on layout segmentation, lumped element modeling, sensitivity analysis, and extraction of probability density functions using convolution methods. The statistical analysis takes into account the effect of thermo-mechanical stress and process variations that are incurred in batch fabrication. Yield enhancement and optimization methods based on joint probability functions and constraint-based convex programming has also been presented. The results in this work have been demonstrated to show good correlation with measurement data.Ph.D.Committee Chair: Swaminathan, Madhavan; Committee Member: Fathianathan, Mervyn; Committee Member: Lim, Sung Kyu; Committee Member: Peterson, Andrew; Committee Member: Tentzeris, Mano

Modeling of integrated inductors for RF circuit design

Dissertação para obtenção do Grau de Mestre em Engenharia Electrotécnic

On-chip Spiral Inductor/transformer Design And Modeling For Rf Applications

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC\u27s such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990\u27s. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development

Inductively Coupled CMOS Power Receiver For Embedded Microsensors

Inductively coupled power transfer can extend the lifetime of embedded microsensors that save costs, energy, and lives. To expand the microsensors' functionality, the transferred power needs to be maximized. Plus, the power receiver needs to handle wide coupling variations in real applications. Therefore, the objective of this research is to design a power receiver that outputs the highest power for the widest coupling range. This research proposes a switched resonant half-bridge power stage that adjusts both energy transfer frequency and duration so the output power is maximally high. A maximum power point (MPP) theory is also developed to predict the optimal settings of the power stage with 98.6% accuracy. Finally, this research addresses the system integration challenges such as synchronization and over-voltage protection. The fabricated self-synchronized prototype outputs up to 89% of the available power across 0.067%~7.9% coupling range. The output power (in percentage of available power) and coupling range are 1.3× and 13× higher than the comparable state of the arts.Ph.D

Realization of a low noise amplifier using 0.35 um SiGe-BicMOS Technology for IEEE 802.11a applications /

The trend demand for towards interactive multimedia services has forced the development of new wireless systems that has greater bandwidths. The evolution of current wireless communication systems has been very rapid. The main goal has been small-size and low-cost transceivers that can be designed for different applications. Data communication systems in compliant with IEEE 802.11a wireless local area network (WLAN) standard has found widespread use, meeting the market demands, for the last few years. Next generation WLAN operates in the 5-6 GHz frequency range. A front-end receiver capable of operating within this frequency range is essential to meet the current and future of products. One of the critical components, allowing the common use of the technology can be attributed to the high performance Low Noise Amplifiers (LNA) in the receiver chain of the 802.11a transceivers. In IEEE 802.11a, there are three frequency bands; 5.15GHz - 5.25GHz, 5.25GHz - 5.35GHz and 5.725GHz - 5.825GHz. In this thesis, we designed and fabricated a single-stage cascode amplifier with emitter inductive degeneration using 0.35 ´m-SiGe BiCMOS process for IEEE 802.11a receivers. The electromagnetic (EM) simulations of the passive components are performed by using Agilent MOMENTUM® tool and all the parasitic components are extracted and compensated, a crucial step for optimizing the performance parameters of the LNA. The simulation results are very similar to measurement results, confirming the effectiveness of design methodology provided in this work

Doctor of Philosophy

dissertationMicroelectromechanical systems (MEMS) resonators on Si have the potential to replace the discrete passive components in a power converter. The main intention of this dissertation is to present a ring-shaped aluminum nitride (AlN) piezoelectric microreson

Energy management techniques for ultra-small bio-medical implants

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 167-174).Trends in the medical industry have created a growing demand for implantable medical devices. In particular, the need to provide medical professionals a means to continuously monitor bio-markers over long time scales with increased precision is paramount to efficient healthcare. To make medical implants more attractive, there is a need to reduce their size and power consumption. Small medical implants would allow for less invasive procedures and greater comfort for patients. The two primary limitations to the size of small medical implants are the batteries that provide energy to circuit and sensor components, and the antennas that enable wireless communication to terminals outside of the body. In this work we present energy management and low-power techniques to help solve the engineering challenges posed by using ultracapacitors for energy storage. A major problem with using any capacitor as an energy source is the fact that its voltage drops rapidly with decreasing charge. This leaves the circuit to cope with a large supply variation and can lead to energy being left on the capacitor when its voltage gets too low to supply a sufficient supply voltage for operation. Rather than use a single ultracapacitor, we demonstrate higher energy utilization by splitting a single capacitor into an array of capacitors that are progressively reconfigured as energy is drawn out. An energy management IC fabricated in 180-nm CMOS implements a stacking procedure that allows for more than 98% of the initial energy stored in the ultracapacitors to be removed before the output voltage drops unsuitably low for circuit operation. The second part of this work develops techniques for wide-input-range energy management. The first chip implementing stacking suffered an efficiency penalty by using a switchedcapacitor voltage regulator with only a single conversion ratio. In a second implementation, we introduce a better solution that preserves efficiency performance by using a multiple conversion ratio switched-capacitor voltage regulator. At any given input voltage from an ultracapcitor array, the switched-capacitor voltage regulator is configured to maximize efficiency. Fabricated in a 180-nm CMOS process, the chip achieves a peak efficiency of 90% and the efficiency does not fall below 70% for input voltages between 1.25 and 3 V.by William R. Sanchez.Ph.D