Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change

We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix equations and tuning over similar to 8 nm is predicted. Devices were fabricated using post-growth shallow ion implantation to reduce the loss in the phase and DBR sections by quantum well intermixing. The lasing wavelength was measured while varying the reverse bias of the phase and DBR sections in the range 0 V to < - 2.5 V. Timing was noncontinuous over a similar to 7-nm-wavelength range, with a side-mode suppression ratio of similar to 20 dB. Coupled cavity effects due to the fabrication method used introduced discontinuities in tuning. The frequency modulation (FM) response was measured to be uniform within 2 dB over the frequency range 10 MHz to 10 GHz, indicating that tuning times of 100 ps are possible

High channel count and high precision channel spacing multi-wavelength laser array for future PICs

Multi-wavelength semiconductor laser arrays (MLAs) have wide applications in wavelength multiplexing division (WDM) networks. In spite of their tremendous potential, adoption of the MLA has been hampered by a number of issues, particularly wavelength precision and fabrication cost. In this paper, we report high channel count MLAs in which the wavelengths of each channel can be determined precisely through low-cost standard μm-level photolithography/holographic lithography and the reconstruction-equivalent-chirp (REC) technique. 60-wavelength MLAs with good wavelength spacing uniformity have been demonstrated experimentally, in which nearly 83% lasers are within a wavelength deviation of ±0.20 nm, corresponding to a tolerance of ±0.032 nm in the period pitch. As a result of employing the equivalent phase shift technique, the single longitudinal mode (SLM) yield is nearly 100%, while the theoretical yield of standard DFB lasers is only around 33.3%

Photonics Integrations Enabling High-end Applications Of Inp In Optical Data Transmissions

We present here results from a uniquely designed InP modulator chip combined with advanced packaging concepts, which enables high-end applications in optical data communications. An electroabsorption (EA) modulator, with a strained InGaAsP or InGaAlAs multiple quantum well structure, is monolithically integrated with a semiconductor optical amplifier. This design offers broad wavelength tunability while maintaining high extinction ratio, high optical output power, and high dispersion tolerance. The amplified EA modulator chip is co-packaged with a distributed feed back (DFB) laser ensuring separate optimization of the laser and modulator sections. The optical isolator, placed between the laser and modulator, completely eliminates adiabatic chirp. This Telcordia-qualified laser integrated modulator platform enables superior performance previously not thought possible for InP absorption based modulators. 11 dB of dynamic extinction ratio, 5dBm of modulated output power, and ±1200ps/nm or +1600ps/nm dispersion tolerance can be simultaneously achieved in un-amplified 10Gb/s data transmission. Full C-band tunability using a single device is also demonstrated with the LIM module. Extensive simulations and transmission system evaluations shows that with the controllable chirp, the cost-effective LIM performs as well as a Mach-Zehnder modulator in dispersion managed and amplified long-haul WDM systems. Lastly, the first uncooled 10Gb/s long-reach operation at 1550nm was demonstrated with LIM packages. Using a simple control algorithm, a constant modulated output power of IdBm with less than IdB dispersion penalty over 1600ps/nm single mode fiber is achieved in an 80 degrees environmental temperature range without any module temperature control. Utilizing the Al-based material system, also allows a reduced variation of the extinction ratio.6013Kaminow, I.P., Koch, T.L., (1997) Optical Fiber Telecommunications IIIA, , San Diego CA: Academic PressChoi, W., Bond, A.E., Kim, J., Zhang, J., Jambunathan, R., Foulk, H., O'Brien, S., Cao, H., Low insertion loss and low dispersion penalty InGaAsP quantum well high speed electroabsorption modulators (2002) IEEE Journal of Lightwave Technologies, 20, pp. 2052-2056Choi, W., Frateschi, N., Zhang, J., Gebretsadik, H., Jambunathan, R., Bond, A.E., Van Norman, J., Wanamaker, C., Full C-band tunable high fiber output power electroabsorption modulator integrated with semiconductor optical amplifier (2003) Electronics Letters, 39, p. 1271. , 2003Zhang, L., Cao, X.D., Long haul transmission using electro-absorption modulators (2002) Technical Proceeding of NFOEC'2002, p. 1204. , paper P447www.vpiphotonics.comMikhailov, V., Killey, R.I., Prat, J., Bayvel, P., Limitation to WDM transmission distance due to cross-phase modulation induced spectral broadening in dispersion compensated standard fiber systems (1999) IEEE Photon. Technol. Lett., 11, pp. 994-996Zhang, J., Frateschi, N., Choi, W., Gebretsadik, H., Jambunathan, R., Bond, A.E., A laser integrated modulator module for uncooled, 10Gbit/s 1550 nm long reach data transmission (2003) Electronics Letters, 39, pp. 1841-1842Frateschi, N.C., Zhang, J., Choi, W.J., Gebretsadik, H., Jambunathan, R., Bond, A.E., High performance uncooled C-band, 10 Gb/s InGaAlAs MQW electro-absorption modulator integrated to Semiconductor Amplifier in Laser integrated modules (2004) Electronics Letters, 40, pp. 140-141. , JanFrateschi, N.C., Zhang, J., Jambunathan, R., Choi, W.J., Ebert, C., Bond, A.E., Long reach uncooled performance of 10 Gb/s Laser integrated modules with InGaAlAs/InP and InGaAsP/InP MQW electroabsorption modulators monolithically integrated with Semiconductor Amplifiers IEEE Photon. Technol. Lett., 17, pp. 1378-138

Wavelength-selectable laser emission from a multistripe array grating integrated cavity laser

We report laser operation of a multistripe array grating integrated cavity (MAGIC) laser in which the wavelength of the emission from a single output stripe is chosen by selectively injection pumping a second stripe. We demonstrate a device that lases in the 1.5 µm fiber band at 15 wavelengths, evenly spaced by ~2 nm. The single-output/wavelength-selectable operation, together with the accurate predefinition of the lasing wavelengths, makes the MAGIC laser a very attractive candidate for use in multiwavelength networks