279 research outputs found
Experimental demonstration of associative memory with memristive neural networks
When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory - the ability to correlate different memories to the same fact or event. Associative memory is such a fundamental and encompassing human ability (and not just human) that the network of neurons in our brain must perform it quite easily. The question is then whether electronic neural networks - electronic schemes that act somewhat similarly to human brains - can be built to perform this type of function. Although the field of neural networks has developed for many years, a key element, namely the synapses between adjacent neurons, has been lacking a satisfactory electronic representation. The reason for this is that a passive circuit element able to reproduce the synapse behaviour needs to remember its past dynamical history, store a continuous set of states, and be "plastic" according to the pre-synaptic and post-synaptic neuronal activity. Here we show that all this can be accomplished by a memory-resistor (memristor for short). In particular, by using simple and inexpensive off-the-shelf components we have built a memristor emulator which realizes all required synaptic properties. Most importantly, we have demonstrated experimentally the formation of associative memory in a simple neural network consisting of three electronic neurons connected by two memristor-emulator synapses. This experimental demonstration opens up new possibilities in the understanding of neural processes using memory devices, an important step forward to reproduce complex learning, adaptive and spontaneous behaviour with electronic neural networks
Pavlov's dog associative learning demonstrated on synaptic-like organic transistors
In this letter, we present an original demonstration of an associative
learning neural network inspired by the famous Pavlov's dogs experiment. A
single nanoparticle organic memory field effect transistor (NOMFET) is used to
implement each synapse. We show how the physical properties of this dynamic
memristive device can be used to perform low power write operations for the
learning and implement short-term association using temporal coding and spike
timing dependent plasticity based learning. An electronic circuit was built to
validate the proposed learning scheme with packaged devices, with good
reproducibility despite the complex synaptic-like dynamic of the NOMFET in
pulse regime
Teaching Memory Circuit Elements via Experiment-Based Learning
The class of memory circuit elements which comprises memristive,
memcapacitive, and meminductive systems, is gaining considerable attention in a
broad range of disciplines. This is due to the enormous flexibility these
elements provide in solving diverse problems in analog/neuromorphic and
digital/quantum computation; the possibility to use them in an integrated
computing-memory paradigm, massively-parallel solution of different
optimization problems, learning, neural networks, etc. The time is therefore
ripe to introduce these elements to the next generation of physicists and
engineers with appropriate teaching tools that can be easily implemented in
undergraduate teaching laboratories. In this paper, we suggest the use of
easy-to-build emulators to provide a hands-on experience for the students to
learn the fundamental properties and realize several applications of these
memelements. We provide explicit examples of problems that could be tackled
with these emulators that range in difficulty from the demonstration of the
basic properties of memristive, memcapacitive, and meminductive systems to
logic/computation and cross-bar memory. The emulators can be built from
off-the-shelf components, with a total cost of a few tens of dollars, thus
providing a relatively inexpensive platform for the implementation of these
exercises in the classroom. We anticipate that this experiment-based learning
can be easily adopted and expanded by the instructors with many more case
studies.Comment: IEEE Circuits and Systems Magazine (in press
Neuromorphic, Digital and Quantum Computation with Memory Circuit Elements
Memory effects are ubiquitous in nature and the class of memory circuit
elements - which includes memristors, memcapacitors and meminductors - shows
great potential to understand and simulate the associated fundamental physical
processes. Here, we show that such elements can also be used in electronic
schemes mimicking biologically-inspired computer architectures, performing
digital logic and arithmetic operations, and can expand the capabilities of
certain quantum computation schemes. In particular, we will discuss few
examples where the concept of memory elements is relevant to the realization of
associative memory in neuronal circuits, spike-timing-dependent plasticity of
synapses, digital and field-programmable quantum computing
Emulating long-term synaptic dynamics with memristive devices
The potential of memristive devices is often seeing in implementing
neuromorphic architectures for achieving brain-like computation. However, the
designing procedures do not allow for extended manipulation of the material,
unlike CMOS technology, the properties of the memristive material should be
harnessed in the context of such computation, under the view that biological
synapses are memristors. Here we demonstrate that single solid-state TiO2
memristors can exhibit associative plasticity phenomena observed in biological
cortical synapses, and are captured by a phenomenological plasticity model
called triplet rule. This rule comprises of a spike-timing dependent plasticity
regime and a classical hebbian associative regime, and is compatible with a
large amount of electrophysiology data. Via a set of experiments with our
artificial, memristive, synapses we show that, contrary to conventional uses of
solid-state memory, the co-existence of field- and thermally-driven switching
mechanisms that could render bipolar and/or unipolar programming modes is a
salient feature for capturing long-term potentiation and depression synaptic
dynamics. We further demonstrate that the non-linear accumulating nature of
memristors promotes long-term potentiating or depressing memory transitions
Experimental study of artificial neural networks using a digital memristor simulator
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog solutions, the proposed digital design is compact, easily reconfigurable, demonstrates very good matching with the mathematical model on which it is based, and complies with all the required features for memristor emulators. We validated its functionality using Altera Quartus II and ModelSim tools targeting low-cost yet powerful field programmable gate array (FPGA) families. We tested its suitability for complex memristive circuits as well as its synapse functioning in artificial neural networks (ANNs), implementing examples of associative memory and unsupervised learning of spatio-temporal correlations in parallel input streams using a simplified STDP. We provide the full circuit schematics of all our digital circuit designs and comment on the required hardware resources and their scaling trends, thus presenting a design framework for applications based on our hardware simulator.Peer ReviewedPostprint (author's final draft
A CMOS Spiking Neuron for Brain-Inspired Neural Networks with Resistive Synapses and In-Situ Learning
Nanoscale resistive memories are expected to fuel dense integration of
electronic synapses for large-scale neuromorphic system. To realize such a
brain-inspired computing chip, a compact CMOS spiking neuron that performs
in-situ learning and computing while driving a large number of resistive
synapses is desired. This work presents a novel leaky integrate-and-fire neuron
design which implements the dual-mode operation of current integration and
synaptic drive, with a single opamp and enables in-situ learning with crossbar
resistive synapses. The proposed design was implemented in a 0.18 m CMOS
technology. Measurements show neuron's ability to drive a thousand resistive
synapses, and demonstrate an in-situ associative learning. The neuron circuit
occupies a small area of 0.01 mm and has an energy-efficiency of 9.3
pJspikesynapse
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