14 research outputs found

    Анализ эффСктивности каскадного кодирования для ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΡ выносливости ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²ΠΎΠΉ NAND Ρ„Π»Π΅Ρˆ-памяти

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    ΠŸΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΠ΅ плотности записи Π² соврСмСнных Ρ‡ΠΈΠΏΠ°Ρ… NAND Ρ„Π»Π΅Ρˆ-памяти, достигаСмоС ΠΊΠ°ΠΊ Π·Π° счСт ΡƒΠΌΠ΅Π½ΡŒΡˆΠ°ΡŽΡ‰Π΅Π³ΠΎΡΡ физичСского Ρ€Π°Π·ΠΌΠ΅Ρ€Π° ячСйки, Ρ‚Π°ΠΊ ΠΈ благодаря Π²ΠΎΠ·Ρ€Π°ΡΡ‚Π°ΡŽΡ‰Π΅ΠΌΡƒ количСству ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΠ΅ΠΌΡ‹Ρ… состояний ячСйки, сопровоТдаСтся сниТСниСм надСТности хранСния Π΄Π°Π½Π½Ρ‹Ρ… – вСроятности ошибки, выносливости (числа Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи) ΠΈ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ хранСния. Π‘Ρ‚Π°Π½Π΄Π°Ρ€Ρ‚Π½Ρ‹ΠΌ Ρ€Π΅ΡˆΠ΅Π½ΠΈΠ΅ΠΌ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠΌ ΠΏΠΎΠ²Ρ‹ΡΠΈΡ‚ΡŒ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡ‚ΡŒ хранСния Π΄Π°Π½Π½Ρ‹Ρ… Π² ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²ΠΎΠΉ Ρ„Π»Π΅Ρˆ-памяти, являСтся Π²Π²Π΅Π΄Π΅Π½ΠΈΠ΅ помСхоустойчивого кодирования. Π­Ρ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ ввСдСния помСхоустойчивого кодирования Π² сущСствСнной стСпСни опрСдСляСтся Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎΡΡ‚ΡŒΡŽ ΠΌΠΎΠ΄Π΅Π»ΠΈ, Ρ„ΠΎΡ€ΠΌΠ°Π»ΠΈΠ·ΡƒΡŽΡ‰Π΅ΠΉ основныС процСссы, связанныС с записью ΠΈ Ρ‡Ρ‚Π΅Π½ΠΈΠ΅ΠΌ Π΄Π°Π½Π½Ρ‹Ρ…. Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ приводится описаниС основных искаТСний, ΡΠΎΠΏΡ€ΠΎΠ²ΠΎΠΆΠ΄Π°ΡŽΡ‰ΠΈΡ… процСсс записи/считывания Π² NAND Ρ„Π»Π΅Ρˆ-памяти, ΠΈ явный Π²ΠΈΠ΄ плотностСй распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ°. Π’ качСствС аппроксимации ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… плотностСй распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ° рассматриваСтся модСль Π½Π° основС ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡ†ΠΈΠΈ гауссова распрСдСлСния ΠΈ распрСдСлСния Лапласа, достаточно Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎ ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰Π°Ρ плотности распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ° ΠΏΡ€ΠΈ большом числС Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи. Для этой ΠΌΠΎΠ΄Π΅Π»ΠΈ проводится Π°Π½Π°Π»ΠΈΠ· помСхоустойчивости каскадных ΠΊΠΎΠ΄ΠΎΠ²Ρ‹Ρ… конструкций с внСшним ΠΊΠΎΠ΄ΠΎΠΌ Π ΠΈΠ΄Π°-Π‘ΠΎΠ»ΠΎΠΌΠΎΠ½Π° ΠΈ Π²Π½ΡƒΡ‚Ρ€Π΅Π½Π½ΠΈΠΌ ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²Ρ‹ΠΌ ΠΊΠΎΠ΄ΠΎΠΌ, состоящим ΠΈΠ· Π΄Π²ΠΎΠΈΡ‡Π½Ρ‹Ρ… ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Π½Ρ‹Ρ… ΠΊΠΎΠ΄ΠΎΠ². Π’Ρ‹ΠΏΠΎΠ»Π½Π΅Π½Π½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· позволяСт ΠΏΠΎΠ»ΡƒΡ‡ΠΈΡ‚ΡŒ ΠΎΠ±ΠΌΠ΅Π½Π½Ρ‹Π΅ ΡΠΎΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΡ ΠΌΠ΅ΠΆΠ΄Ρƒ Π²Π΅Ρ€ΠΎΡΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ ошибки, ΠΏΠ»ΠΎΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ записи ΠΈ числом Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ ΠΎΠ±ΠΌΠ΅Π½Π½Ρ‹Π΅ ΡΠΎΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΡ ΠΏΠΎΠΊΠ°Π·Ρ‹Π²Π°ΡŽΡ‚, Ρ‡Ρ‚ΠΎ ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Ρ‹Π΅ конструкции ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‚ Π·Π° счСт ΠΎΡ‡Π΅Π½ΡŒ Π½Π΅Π·Π½Π°Ρ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ сниТСния плотности записи ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΡ‚ΡŒ ΡƒΠ²Π΅Π»ΠΈΡ‡Π΅Π½ΠΈΠ΅ Π³Ρ€Π°Π½ΠΈΡ‡Π½ΠΎΠ³ΠΎ значСния числа Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи (опрСдСляСмого ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡ‚Π΅Π»Π΅ΠΌ) Π² 2–2.5 Ρ€Π°Π·Π° ΠΏΡ€ΠΈ сохранСнии Ρ‚Ρ€Π΅Π±ΡƒΠ΅ΠΌΠΎΠ³ΠΎ значСния вСроятности ошибки Π½Π° Π±ΠΈΡ‚

    Анализ эффСктивности каскадного кодирования для ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΡ выносливости ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²ΠΎΠΉ NAND Ρ„Π»Π΅Ρˆ-памяти

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    The increasing storage density of modern NAND flash memory chips, achieved both due to scaling down the cell size, and due to the increasing number of used cell states, leads to a decrease in data storage reliability, namely, error probability, endurance (number of P/E cycling) and retention time. Error correction codes are often used to improve the reliability of data storage in multilevel flash memory. The effectiveness of using error correction codes is largely determined by the model accuracy that exhibits the basic processes associated with writing and reading data. The paper describes the main sources of disturbances for a flash cell that affect the threshold voltage of the cell in NAND flash memory, and represents an explicit form of the threshold voltage distribution. As an approximation of the obtained threshold voltage distribution, a Normal-Laplace mixture model was shown to be a good fit in multilevel flash memories for a large number of rewriting cycles. For this model, a performance analysis of the concatenated coding scheme with an outer Reed-Solomon code and an inner multilevel code consisting of binary component codes is carried out. The performed analysis makes it possible to obtain tradeoffs between the error probability, storage density, and the number of P/E cycling. The resulting tradeoffs show that the considered concatenated coding schemes allow, due to a very slight decrease in the storage density, to increase the number of P/E cycling up to 2–2.5 times than their nominal endurance specification while maintaining the required value of the bit error probability.ΠŸΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΠ΅ плотности записи Π² соврСмСнных Ρ‡ΠΈΠΏΠ°Ρ… NAND Ρ„Π»Π΅Ρˆ-памяти, достигаСмоС ΠΊΠ°ΠΊ Π·Π° счСт ΡƒΠΌΠ΅Π½ΡŒΡˆΠ°ΡŽΡ‰Π΅Π³ΠΎΡΡ физичСского Ρ€Π°Π·ΠΌΠ΅Ρ€Π° ячСйки, Ρ‚Π°ΠΊ ΠΈ благодаря Π²ΠΎΠ·Ρ€Π°ΡΡ‚Π°ΡŽΡ‰Π΅ΠΌΡƒ количСству ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΠ΅ΠΌΡ‹Ρ… состояний ячСйки, сопровоТдаСтся сниТСниСм надСТности хранСния Π΄Π°Π½Π½Ρ‹Ρ… – вСроятности ошибки, выносливости (числа Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи) ΠΈ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ хранСния. Π‘Ρ‚Π°Π½Π΄Π°Ρ€Ρ‚Π½Ρ‹ΠΌ Ρ€Π΅ΡˆΠ΅Π½ΠΈΠ΅ΠΌ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠΌ ΠΏΠΎΠ²Ρ‹ΡΠΈΡ‚ΡŒ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡ‚ΡŒ хранСния Π΄Π°Π½Π½Ρ‹Ρ… Π² ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²ΠΎΠΉ Ρ„Π»Π΅Ρˆ-памяти, являСтся Π²Π²Π΅Π΄Π΅Π½ΠΈΠ΅ помСхоустойчивого кодирования. Π­Ρ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ ввСдСния помСхоустойчивого кодирования Π² сущСствСнной стСпСни опрСдСляСтся Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎΡΡ‚ΡŒΡŽ ΠΌΠΎΠ΄Π΅Π»ΠΈ, Ρ„ΠΎΡ€ΠΌΠ°Π»ΠΈΠ·ΡƒΡŽΡ‰Π΅ΠΉ основныС процСссы, связанныС с записью ΠΈ Ρ‡Ρ‚Π΅Π½ΠΈΠ΅ΠΌ Π΄Π°Π½Π½Ρ‹Ρ…. Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ приводится описаниС основных искаТСний, ΡΠΎΠΏΡ€ΠΎΠ²ΠΎΠΆΠ΄Π°ΡŽΡ‰ΠΈΡ… процСсс записи/считывания Π² NAND Ρ„Π»Π΅Ρˆ-памяти, ΠΈ явный Π²ΠΈΠ΄ плотностСй распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ°. Π’ качСствС аппроксимации ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… плотностСй распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ° рассматриваСтся модСль Π½Π° основС ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡ†ΠΈΠΈ гауссова распрСдСлСния ΠΈ распрСдСлСния Лапласа, достаточно Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎ ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰Π°Ρ плотности распрСдСлСния Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚ΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ ΡˆΡƒΠΌΠ° ΠΏΡ€ΠΈ большом числС Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи. Для этой ΠΌΠΎΠ΄Π΅Π»ΠΈ проводится Π°Π½Π°Π»ΠΈΠ· помСхоустойчивости каскадных ΠΊΠΎΠ΄ΠΎΠ²Ρ‹Ρ… конструкций с внСшним ΠΊΠΎΠ΄ΠΎΠΌ Π ΠΈΠ΄Π°-Π‘ΠΎΠ»ΠΎΠΌΠΎΠ½Π° ΠΈ Π²Π½ΡƒΡ‚Ρ€Π΅Π½Π½ΠΈΠΌ ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²Ρ‹ΠΌ ΠΊΠΎΠ΄ΠΎΠΌ, состоящим ΠΈΠ· Π΄Π²ΠΎΠΈΡ‡Π½Ρ‹Ρ… ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Π½Ρ‹Ρ… ΠΊΠΎΠ΄ΠΎΠ². Π’Ρ‹ΠΏΠΎΠ»Π½Π΅Π½Π½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· позволяСт ΠΏΠΎΠ»ΡƒΡ‡ΠΈΡ‚ΡŒ ΠΎΠ±ΠΌΠ΅Π½Π½Ρ‹Π΅ ΡΠΎΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΡ ΠΌΠ΅ΠΆΠ΄Ρƒ Π²Π΅Ρ€ΠΎΡΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ ошибки, ΠΏΠ»ΠΎΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ записи ΠΈ числом Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ ΠΎΠ±ΠΌΠ΅Π½Π½Ρ‹Π΅ ΡΠΎΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΡ ΠΏΠΎΠΊΠ°Π·Ρ‹Π²Π°ΡŽΡ‚, Ρ‡Ρ‚ΠΎ ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Ρ‹Π΅ конструкции ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‚ Π·Π° счСт ΠΎΡ‡Π΅Π½ΡŒ Π½Π΅Π·Π½Π°Ρ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ сниТСния плотности записи ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΡ‚ΡŒ ΡƒΠ²Π΅Π»ΠΈΡ‡Π΅Π½ΠΈΠ΅ Π³Ρ€Π°Π½ΠΈΡ‡Π½ΠΎΠ³ΠΎ значСния числа Ρ†ΠΈΠΊΠ»ΠΎΠ² пСрСзаписи (опрСдСляСмого ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡ‚Π΅Π»Π΅ΠΌ) Π² 2–2.5 Ρ€Π°Π·Π° ΠΏΡ€ΠΈ сохранСнии Ρ‚Ρ€Π΅Π±ΡƒΠ΅ΠΌΠΎΠ³ΠΎ значСния вСроятности ошибки Π½Π° Π±ΠΈΡ‚

    Study On Endurance Of Flash Memory Ssds

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    Flash memory promises to revolutionize storage systems because of its massive performance gains, ruggedness, large decrease in power usage and physical space requirements, but it is not a direct replacement for magnetic hard disks. Flash memory possesses fundamentally different characteristics and in order to fully utilize the positive aspects of flash memory, we must engineer around its unique limitations. The primary limitations are lack of in-place updates, the asymmetry between the sizes of the write and erase operations, and the limited endurance of flash memory cells. This leads to the need for efficient methods for block cleaning, combating write amplification and performing wear leveling. These are fundamental attributes of flash memory and will always need to be understood and efficiently managed to produce an efficient and high performance storage system. Our goal in this work is to provide analysis and algorithms for efficiently managing data storage for endurance in flash memory. We present update codes, a class of floating codes, which encodes data updates as flash memory cell increments that results in reduced block erases and longer lifespan of flash memory, and provides a new algorithm for constructing optimal floating codes. We also analyze the theoretically possible limits of write amplification reduction and minimization by using offline workloads. We give an estimation of the minimal write amplification by a workload decomposition algorithm and find that write amplification can be pushed to zero with relatively low over-provisioning. Additionally, we give simple, efficient and practical algorithms that are effective in reducing write amplification and performing wear leveling. Finally, we present a quantitative model of wear levels in flash memory by constructing a difference equation that gives erase counts of a block with workload, wear leveling strategy and SSD configuration as parameters

    (Re)imaging the breast: a feminist analysis of a cultural obsession

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    No abstract avaialble.The original print copy of this thesis may be available here: http://wizard.unbc.ca/record=b121950

    Understanding Quantum Technologies 2022

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    Understanding Quantum Technologies 2022 is a creative-commons ebook that provides a unique 360 degrees overview of quantum technologies from science and technology to geopolitical and societal issues. It covers quantum physics history, quantum physics 101, gate-based quantum computing, quantum computing engineering (including quantum error corrections and quantum computing energetics), quantum computing hardware (all qubit types, including quantum annealing and quantum simulation paradigms, history, science, research, implementation and vendors), quantum enabling technologies (cryogenics, control electronics, photonics, components fabs, raw materials), quantum computing algorithms, software development tools and use cases, unconventional computing (potential alternatives to quantum and classical computing), quantum telecommunications and cryptography, quantum sensing, quantum technologies around the world, quantum technologies societal impact and even quantum fake sciences. The main audience are computer science engineers, developers and IT specialists as well as quantum scientists and students who want to acquire a global view of how quantum technologies work, and particularly quantum computing. This version is an extensive update to the 2021 edition published in October 2021.Comment: 1132 pages, 920 figures, Letter forma

    The Ledger and Times, June 29, 1973

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    The Whitworthian 2008-2009

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    The Whitworthian student newspaper, September 2008-May 2009.https://digitalcommons.whitworth.edu/whitworthian/1093/thumbnail.jp

    James Michael Curley Scrapbooks Volume 63

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    The James Michael Curley Scrapbook Collection consists of digitized microfilmed copies of notebooks kept by Curley from 1914-1937. These notebooks contain news clippings that were drawn primarily from Boston newspapers. Curley was born in Roxbury, MA in 1874. He served four terms as Mayor of Boston: 1914–1918, 1922–1926, 1930–1934 and 1946–1950. He also served as Governor of Massachusetts from 1935-1937. In addition to Curley’s political career, the scrapbooks also include clippings about his first wife Mrs. Mary Herlihy Curley (1884-1930) and their daughter Mary D. Curley (1909-1950). A selection of the notebooks were microfilmed in 1962. The microfilm can be found in the holdings of Dinand Library, Holy Cross’s main library. This volume includes clippings from 1931https://crossworks.holycross.edu/curley_scrapbooks/1094/thumbnail.jp

    Summary of WTC Health Program research : NIOSH research compendium 20/21 August

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    Suggested citation: Kubale T, Katruska A, Brown EP, Santiago-Col\uf3n A, Daniels RD, Reissman DB [2021]. Summary of World Trade Center Health Program research: NIOSH research compendium. Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control and Prevention, National Institute for Occupational Safety and Health:1\u2013595.Summary-of-WTC-Health-Program-Research-2021-03282022.pd
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