14 research outputs found
ΠΠ½Π°Π»ΠΈΠ· ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΊΠ°ΡΠΊΠ°Π΄Π½ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π΄Π»Ρ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ Π²ΡΠ½ΠΎΡΠ»ΠΈΠ²ΠΎΡΡΠΈ ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΠΎΠΉ NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ
ΠΠΎΠ²ΡΡΠ΅Π½ΠΈΠ΅ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ Π·Π°ΠΏΠΈΡΠΈ Π² ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠΈΠΏΠ°Ρ
NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, Π΄ΠΎΡΡΠΈΠ³Π°Π΅ΠΌΠΎΠ΅ ΠΊΠ°ΠΊ Π·Π° ΡΡΠ΅Ρ ΡΠΌΠ΅Π½ΡΡΠ°ΡΡΠ΅Π³ΠΎΡΡ ΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ°Π·ΠΌΠ΅ΡΠ° ΡΡΠ΅ΠΉΠΊΠΈ, ΡΠ°ΠΊ ΠΈ Π±Π»Π°Π³ΠΎΠ΄Π°ΡΡ Π²ΠΎΠ·ΡΠ°ΡΡΠ°ΡΡΠ΅ΠΌΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΠΉ ΡΡΠ΅ΠΉΠΊΠΈ, ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°Π΅ΡΡΡ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΠ΅ΠΌ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΠΈ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
β Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠΈ ΠΎΡΠΈΠ±ΠΊΠΈ, Π²ΡΠ½ΠΎΡΠ»ΠΈΠ²ΠΎΡΡΠΈ (ΡΠΈΡΠ»Π° ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ) ΠΈ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ. Π‘ΡΠ°Π½Π΄Π°ΡΡΠ½ΡΠΌ ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ΠΌ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠΈΠΌ ΠΏΠΎΠ²ΡΡΠΈΡΡ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΡ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
Π² ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΠΎΠΉ ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, ΡΠ²Π»ΡΠ΅ΡΡΡ Π²Π²Π΅Π΄Π΅Π½ΠΈΠ΅ ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ. ΠΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ Π²Π²Π΅Π΄Π΅Π½ΠΈΡ ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠΉ ΡΡΠ΅ΠΏΠ΅Π½ΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ΅ΡΡΡ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΡΡΡΡ ΠΌΠΎΠ΄Π΅Π»ΠΈ, ΡΠΎΡΠΌΠ°Π»ΠΈΠ·ΡΡΡΠ΅ΠΉ ΠΎΡΠ½ΠΎΠ²Π½ΡΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΡ, ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ Ρ Π·Π°ΠΏΠΈΡΡΡ ΠΈ ΡΡΠ΅Π½ΠΈΠ΅ΠΌ Π΄Π°Π½Π½ΡΡ
. Π ΡΠ°Π±ΠΎΡΠ΅ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡΡΡ ΠΎΠΏΠΈΡΠ°Π½ΠΈΠ΅ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΠΈΡΠΊΠ°ΠΆΠ΅Π½ΠΈΠΉ, ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°ΡΡΠΈΡ
ΠΏΡΠΎΡΠ΅ΡΡ Π·Π°ΠΏΠΈΡΠΈ/ΡΡΠΈΡΡΠ²Π°Π½ΠΈΡ Π² NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, ΠΈ ΡΠ²Π½ΡΠΉ Π²ΠΈΠ΄ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠ΅ΠΉ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ°. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ Π°ΠΏΠΏΡΠΎΠΊΡΠΈΠΌΠ°ΡΠΈΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠ΅ΠΉ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ° ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ ΠΌΠΎΠ΄Π΅Π»Ρ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΈ Π³Π°ΡΡΡΠΎΠ²Π° ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΠΠ°ΠΏΠ»Π°ΡΠ°, Π΄ΠΎΡΡΠ°ΡΠΎΡΠ½ΠΎ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎ ΠΎΡΡΠ°ΠΆΠ°ΡΡΠ°Ρ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ° ΠΏΡΠΈ Π±ΠΎΠ»ΡΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ. ΠΠ»Ρ ΡΡΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΡΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΡΡΠΈ ΠΊΠ°ΡΠΊΠ°Π΄Π½ΡΡ
ΠΊΠΎΠ΄ΠΎΠ²ΡΡ
ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΉ Ρ Π²Π½Π΅ΡΠ½ΠΈΠΌ ΠΊΠΎΠ΄ΠΎΠΌ Π ΠΈΠ΄Π°-Π‘ΠΎΠ»ΠΎΠΌΠΎΠ½Π° ΠΈ Π²Π½ΡΡΡΠ΅Π½Π½ΠΈΠΌ ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΡΠΌ ΠΊΠΎΠ΄ΠΎΠΌ, ΡΠΎΡΡΠΎΡΡΠΈΠΌ ΠΈΠ· Π΄Π²ΠΎΠΈΡΠ½ΡΡ
ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠ½ΡΡ
ΠΊΠΎΠ΄ΠΎΠ². ΠΡΠΏΠΎΠ»Π½Π΅Π½Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΠΏΠΎΠ»ΡΡΠΈΡΡ ΠΎΠ±ΠΌΠ΅Π½Π½ΡΠ΅ ΡΠΎΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΌΠ΅ΠΆΠ΄Ρ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΡΡ ΠΎΡΠΈΠ±ΠΊΠΈ, ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡΡ Π·Π°ΠΏΠΈΡΠΈ ΠΈ ΡΠΈΡΠ»ΠΎΠΌ ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΠΎΠ±ΠΌΠ΅Π½Π½ΡΠ΅ ΡΠΎΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΏΠΎΠΊΠ°Π·ΡΠ²Π°ΡΡ, ΡΡΠΎ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΠ΅ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ Π·Π° ΡΡΠ΅Ρ ΠΎΡΠ΅Π½Ρ Π½Π΅Π·Π½Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΡ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ Π·Π°ΠΏΠΈΡΠΈ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΡΡ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ Π³ΡΠ°Π½ΠΈΡΠ½ΠΎΠ³ΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΡ ΡΠΈΡΠ»Π° ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ (ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ΅ΠΌΠΎΠ³ΠΎ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡΠ΅Π»Π΅ΠΌ) Π² 2β2.5 ΡΠ°Π·Π° ΠΏΡΠΈ ΡΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΠΈ ΡΡΠ΅Π±ΡΠ΅ΠΌΠΎΠ³ΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΡ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠΈ ΠΎΡΠΈΠ±ΠΊΠΈ Π½Π° Π±ΠΈΡ
ΠΠ½Π°Π»ΠΈΠ· ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΊΠ°ΡΠΊΠ°Π΄Π½ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π΄Π»Ρ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ Π²ΡΠ½ΠΎΡΠ»ΠΈΠ²ΠΎΡΡΠΈ ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΠΎΠΉ NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ
The increasing storage density of modern NAND flash memory chips, achieved both due to scaling down the cell size, and due to the increasing number of used cell states, leads to a decrease in data storage reliability, namely, error probability, endurance (number of P/E cycling) and retention time. Error correction codes are often used to improve the reliability of data storage in multilevel flash memory. The effectiveness of using error correction codes is largely determined by the model accuracy that exhibits the basic processes associated with writing and reading data. The paper describes the main sources of disturbances for a flash cell that affect the threshold voltage of the cell in NAND flash memory, and represents an explicit form of the threshold voltage distribution. As an approximation of the obtained threshold voltage distribution, a Normal-Laplace mixture model was shown to be a good fit in multilevel flash memories for a large number of rewriting cycles. For this model, a performance analysis of the concatenated coding scheme with an outer Reed-Solomon code and an inner multilevel code consisting of binary component codes is carried out. The performed analysis makes it possible to obtain tradeoffs between the error probability, storage density, and the number of P/E cycling. The resulting tradeoffs show that the considered concatenated coding schemes allow, due to a very slight decrease in the storage density, to increase the number of P/E cycling up to 2β2.5 times than their nominal endurance specification while maintaining the required value of the bit error probability.ΠΠΎΠ²ΡΡΠ΅Π½ΠΈΠ΅ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ Π·Π°ΠΏΠΈΡΠΈ Π² ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠΈΠΏΠ°Ρ
NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, Π΄ΠΎΡΡΠΈΠ³Π°Π΅ΠΌΠΎΠ΅ ΠΊΠ°ΠΊ Π·Π° ΡΡΠ΅Ρ ΡΠΌΠ΅Π½ΡΡΠ°ΡΡΠ΅Π³ΠΎΡΡ ΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ°Π·ΠΌΠ΅ΡΠ° ΡΡΠ΅ΠΉΠΊΠΈ, ΡΠ°ΠΊ ΠΈ Π±Π»Π°Π³ΠΎΠ΄Π°ΡΡ Π²ΠΎΠ·ΡΠ°ΡΡΠ°ΡΡΠ΅ΠΌΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΠΉ ΡΡΠ΅ΠΉΠΊΠΈ, ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°Π΅ΡΡΡ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΠ΅ΠΌ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΠΈ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
β Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠΈ ΠΎΡΠΈΠ±ΠΊΠΈ, Π²ΡΠ½ΠΎΡΠ»ΠΈΠ²ΠΎΡΡΠΈ (ΡΠΈΡΠ»Π° ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ) ΠΈ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ. Π‘ΡΠ°Π½Π΄Π°ΡΡΠ½ΡΠΌ ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ΠΌ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠΈΠΌ ΠΏΠΎΠ²ΡΡΠΈΡΡ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΡ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
Π² ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΠΎΠΉ ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, ΡΠ²Π»ΡΠ΅ΡΡΡ Π²Π²Π΅Π΄Π΅Π½ΠΈΠ΅ ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ. ΠΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ Π²Π²Π΅Π΄Π΅Π½ΠΈΡ ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΠ³ΠΎ ΠΊΠΎΠ΄ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠΉ ΡΡΠ΅ΠΏΠ΅Π½ΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ΅ΡΡΡ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΡΡΡΡ ΠΌΠΎΠ΄Π΅Π»ΠΈ, ΡΠΎΡΠΌΠ°Π»ΠΈΠ·ΡΡΡΠ΅ΠΉ ΠΎΡΠ½ΠΎΠ²Π½ΡΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΡ, ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ Ρ Π·Π°ΠΏΠΈΡΡΡ ΠΈ ΡΡΠ΅Π½ΠΈΠ΅ΠΌ Π΄Π°Π½Π½ΡΡ
. Π ΡΠ°Π±ΠΎΡΠ΅ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡΡΡ ΠΎΠΏΠΈΡΠ°Π½ΠΈΠ΅ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΠΈΡΠΊΠ°ΠΆΠ΅Π½ΠΈΠΉ, ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°ΡΡΠΈΡ
ΠΏΡΠΎΡΠ΅ΡΡ Π·Π°ΠΏΠΈΡΠΈ/ΡΡΠΈΡΡΠ²Π°Π½ΠΈΡ Π² NAND ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ, ΠΈ ΡΠ²Π½ΡΠΉ Π²ΠΈΠ΄ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠ΅ΠΉ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ°. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ Π°ΠΏΠΏΡΠΎΠΊΡΠΈΠΌΠ°ΡΠΈΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠ΅ΠΉ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ° ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ ΠΌΠΎΠ΄Π΅Π»Ρ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΈ Π³Π°ΡΡΡΠΎΠ²Π° ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΠΠ°ΠΏΠ»Π°ΡΠ°, Π΄ΠΎΡΡΠ°ΡΠΎΡΠ½ΠΎ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎ ΠΎΡΡΠ°ΠΆΠ°ΡΡΠ°Ρ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ΅Π·ΡΠ»ΡΡΠΈΡΡΡΡΠ΅Π³ΠΎ ΡΡΠΌΠ° ΠΏΡΠΈ Π±ΠΎΠ»ΡΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ. ΠΠ»Ρ ΡΡΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΡΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΏΠΎΠΌΠ΅Ρ
ΠΎΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΡΡΠΈ ΠΊΠ°ΡΠΊΠ°Π΄Π½ΡΡ
ΠΊΠΎΠ΄ΠΎΠ²ΡΡ
ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΉ Ρ Π²Π½Π΅ΡΠ½ΠΈΠΌ ΠΊΠΎΠ΄ΠΎΠΌ Π ΠΈΠ΄Π°-Π‘ΠΎΠ»ΠΎΠΌΠΎΠ½Π° ΠΈ Π²Π½ΡΡΡΠ΅Π½Π½ΠΈΠΌ ΠΌΠ½ΠΎΠ³ΠΎΡΡΠΎΠ²Π½Π΅Π²ΡΠΌ ΠΊΠΎΠ΄ΠΎΠΌ, ΡΠΎΡΡΠΎΡΡΠΈΠΌ ΠΈΠ· Π΄Π²ΠΎΠΈΡΠ½ΡΡ
ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠ½ΡΡ
ΠΊΠΎΠ΄ΠΎΠ². ΠΡΠΏΠΎΠ»Π½Π΅Π½Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΠΏΠΎΠ»ΡΡΠΈΡΡ ΠΎΠ±ΠΌΠ΅Π½Π½ΡΠ΅ ΡΠΎΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΌΠ΅ΠΆΠ΄Ρ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΡΡ ΠΎΡΠΈΠ±ΠΊΠΈ, ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡΡ Π·Π°ΠΏΠΈΡΠΈ ΠΈ ΡΠΈΡΠ»ΠΎΠΌ ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΠΎΠ±ΠΌΠ΅Π½Π½ΡΠ΅ ΡΠΎΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΏΠΎΠΊΠ°Π·ΡΠ²Π°ΡΡ, ΡΡΠΎ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΠ΅ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ Π·Π° ΡΡΠ΅Ρ ΠΎΡΠ΅Π½Ρ Π½Π΅Π·Π½Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΡ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ Π·Π°ΠΏΠΈΡΠΈ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΡΡ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ Π³ΡΠ°Π½ΠΈΡΠ½ΠΎΠ³ΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΡ ΡΠΈΡΠ»Π° ΡΠΈΠΊΠ»ΠΎΠ² ΠΏΠ΅ΡΠ΅Π·Π°ΠΏΠΈΡΠΈ (ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ΅ΠΌΠΎΠ³ΠΎ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡΠ΅Π»Π΅ΠΌ) Π² 2β2.5 ΡΠ°Π·Π° ΠΏΡΠΈ ΡΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΠΈ ΡΡΠ΅Π±ΡΠ΅ΠΌΠΎΠ³ΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΡ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠΈ ΠΎΡΠΈΠ±ΠΊΠΈ Π½Π° Π±ΠΈΡ
Study On Endurance Of Flash Memory Ssds
Flash memory promises to revolutionize storage systems because of its massive performance gains, ruggedness, large decrease in power usage and physical space requirements, but it is not a direct replacement for magnetic hard disks. Flash memory possesses fundamentally different characteristics and in order to fully utilize the positive aspects of flash memory, we must engineer around its unique limitations. The primary limitations are lack of in-place updates, the asymmetry between the sizes of the write and erase operations, and the limited endurance of flash memory cells. This leads to the need for efficient methods for block cleaning, combating write amplification and performing wear leveling. These are fundamental attributes of flash memory and will always need to be understood and efficiently managed to produce an efficient and high performance storage system.
Our goal in this work is to provide analysis and algorithms for efficiently managing data storage for endurance in flash memory. We present update codes, a class of floating codes, which encodes data updates as flash memory cell increments that results in reduced block erases and longer lifespan of flash memory, and provides a new algorithm for constructing optimal floating codes. We also analyze the theoretically possible limits of write amplification reduction and minimization by using offline workloads. We give an estimation of the minimal write amplification by a workload decomposition algorithm and find that write amplification can be pushed to zero with relatively low over-provisioning. Additionally, we give simple, efficient and practical algorithms that are effective in reducing write amplification and performing wear leveling. Finally, we present a quantitative model of wear levels in flash memory by constructing a difference equation that gives erase counts of a block with workload, wear leveling strategy and SSD configuration as parameters
(Re)imaging the breast: a feminist analysis of a cultural obsession
No abstract avaialble.The original print copy of this thesis may be available here: http://wizard.unbc.ca/record=b121950
Understanding Quantum Technologies 2022
Understanding Quantum Technologies 2022 is a creative-commons ebook that
provides a unique 360 degrees overview of quantum technologies from science and
technology to geopolitical and societal issues. It covers quantum physics
history, quantum physics 101, gate-based quantum computing, quantum computing
engineering (including quantum error corrections and quantum computing
energetics), quantum computing hardware (all qubit types, including quantum
annealing and quantum simulation paradigms, history, science, research,
implementation and vendors), quantum enabling technologies (cryogenics, control
electronics, photonics, components fabs, raw materials), quantum computing
algorithms, software development tools and use cases, unconventional computing
(potential alternatives to quantum and classical computing), quantum
telecommunications and cryptography, quantum sensing, quantum technologies
around the world, quantum technologies societal impact and even quantum fake
sciences. The main audience are computer science engineers, developers and IT
specialists as well as quantum scientists and students who want to acquire a
global view of how quantum technologies work, and particularly quantum
computing. This version is an extensive update to the 2021 edition published in
October 2021.Comment: 1132 pages, 920 figures, Letter forma
The Whitworthian 2008-2009
The Whitworthian student newspaper, September 2008-May 2009.https://digitalcommons.whitworth.edu/whitworthian/1093/thumbnail.jp
James Michael Curley Scrapbooks Volume 63
The James Michael Curley Scrapbook Collection consists of digitized microfilmed copies of notebooks kept by Curley from 1914-1937. These notebooks contain news clippings that were drawn primarily from Boston newspapers. Curley was born in Roxbury, MA in 1874. He served four terms as Mayor of Boston: 1914β1918, 1922β1926, 1930β1934 and 1946β1950. He also served as Governor of Massachusetts from 1935-1937. In addition to Curleyβs political career, the scrapbooks also include clippings about his first wife Mrs. Mary Herlihy Curley (1884-1930) and their daughter Mary D. Curley (1909-1950). A selection of the notebooks were microfilmed in 1962. The microfilm can be found in the holdings of Dinand Library, Holy Crossβs main library.
This volume includes clippings from 1931https://crossworks.holycross.edu/curley_scrapbooks/1094/thumbnail.jp
Summary of WTC Health Program research : NIOSH research compendium 20/21 August
Suggested citation: Kubale T, Katruska A, Brown EP, Santiago-Col\uf3n A, Daniels RD, Reissman DB [2021]. Summary of World Trade Center Health Program research: NIOSH research compendium. Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control and Prevention, National Institute for Occupational Safety and Health:1\u2013595.Summary-of-WTC-Health-Program-Research-2021-03282022.pd