Accelerating Time Series Analysis via Processing using Non-Volatile Memories

Time Series Analysis (TSA) is a critical workload for consumer-facing devices. Accelerating TSA is vital for many domains as it enables the extraction of valuable information and predict future events. The state-of-the-art algorithm in TSA is the subsequence Dynamic Time Warping (sDTW) algorithm. However, sDTW's computation complexity increases quadratically with the time series' length, resulting in two performance implications. First, the amount of data parallelism available is significantly higher than the small number of processing units enabled by commodity systems (e.g., CPUs). Second, sDTW is bottlenecked by memory because it 1) has low arithmetic intensity and 2) incurs a large memory footprint. To tackle these two challenges, we leverage Processing-using-Memory (PuM) by performing in-situ computation where data resides, using the memory cells. PuM provides a promising solution to alleviate data movement bottlenecks and exposes immense parallelism. In this work, we present MATSA, the first MRAM-based Accelerator for Time Series Analysis. The key idea is to exploit magneto-resistive memory crossbars to enable energy-efficient and fast time series computation in memory. MATSA provides the following key benefits: 1) it leverages high levels of parallelism in the memory substrate by exploiting column-wise arithmetic operations, and 2) it significantly reduces the data movement costs performing computation using the memory cells. We evaluate three versions of MATSA to match the requirements of different environments (e.g., embedded, desktop, or HPC computing) based on MRAM technology trends. We perform a design space exploration and demonstrate that our HPC version of MATSA can improve performance by 7.35x/6.15x/6.31x and energy efficiency by 11.29x/4.21x/2.65x over server CPU, GPU and PNM architectures, respectively

GraphR: Accelerating Graph Processing Using ReRAM

This paper presents GRAPHR, the first ReRAM-based graph processing accelerator. GRAPHR follows the principle of near-data processing and explores the opportunity of performing massive parallel analog operations with low hardware and energy cost. The analog computation is suit- able for graph processing because: 1) The algorithms are iterative and could inherently tolerate the imprecision; 2) Both probability calculation (e.g., PageRank and Collaborative Filtering) and typical graph algorithms involving integers (e.g., BFS/SSSP) are resilient to errors. The key insight of GRAPHR is that if a vertex program of a graph algorithm can be expressed in sparse matrix vector multiplication (SpMV), it can be efficiently performed by ReRAM crossbar. We show that this assumption is generally true for a large set of graph algorithms. GRAPHR is a novel accelerator architecture consisting of two components: memory ReRAM and graph engine (GE). The core graph computations are performed in sparse matrix format in GEs (ReRAM crossbars). The vector/matrix-based graph computation is not new, but ReRAM offers the unique opportunity to realize the massive parallelism with unprecedented energy efficiency and low hardware cost. With small subgraphs processed by GEs, the gain of performing parallel operations overshadows the wastes due to sparsity. The experiment results show that GRAPHR achieves a 16.01x (up to 132.67x) speedup and a 33.82x energy saving on geometric mean compared to a CPU baseline system. Com- pared to GPU, GRAPHR achieves 1.69x to 2.19x speedup and consumes 4.77x to 8.91x less energy. GRAPHR gains a speedup of 1.16x to 4.12x, and is 3.67x to 10.96x more energy efficiency compared to PIM-based architecture.Comment: Accepted to HPCA 201

Computing with Spintronics: Circuits and architectures

This thesis makes the following contributions towards the design of computing platforms with spintronic devices. 1) It explores the use of spintronic memories in the design of a domain-specific processor for an emerging class of data-intensive applications, namely recognition, mining and synthesis (RMS). Two different spintronic memory technologies — Domain Wall Memory (DWM) and STT-MRAM — are utilized to realize the different levels in the memory hierarchy of the domain-specific processor, based on their respective access characteristics. Architectural tradeoffs created by the use of spintronic memories are analyzed. The proposed design achieves 1.5X-4X improvements in energy-delay product compared to a CMOS baseline. 2) It describes the first attempt to use DWM in the cache hierarchy of general-purpose processors. DWM promises unparalleled density by packing several bits of data into each bit-cell. TapeCache, the proposed DWM-based cache architecture, utilizes suitable circuit and architectural optimizations to address two key challenges (i) the high energy and latency requirement of write operations and (ii) the need for shift operations to access the data stored in each DWM bit-cell. At the circuit level, DWM bit-cells that are tailored to the distinct design requirements of different levels in the cache hierarchy are proposed. At the architecture level, TapeCache proposes suitable cache organization and management policies to alleviate the performance impact of shift operations required to access data stored in DWM bit-cells. TapeCache achieves more than 7X improvements in both cache area and energy with virtually identical performance compared to an SRAM-based cache hierarchy. 3) It investigates the design of the on-chip memory hierarchy of general-purpose graphics processing units (GPGPUs)—massively parallel processors that are optimized for data-intensive high-throughput workloads—using DWM. STAG, a high density, energy-efficient Spintronic- Tape Architecture for GPGPU cache hierarchies is described. STAG utilizes different DWM bit-cells to realize different memory arrays in the GPGPU cache hierarchy. To address the challenge of high access latencies due to shifts, STAG predicts upcoming cache accesses by leveraging unique characteristics of GPGPU architectures and workloads, and prefetches data that are both likely to be accessed and require large numbers of shift operations. STAG achieves 3.3X energy reduction and 12.1% performance improvement over CMOS SRAM under iso-area conditions. 4) While the potential of spintronic devices for memories is widely recognized, their utility in realizing logic is much less clear. The thesis presents Spintastic, a new paradigm that utilizes Stochastic Computing (SC) to realize spintronic logic. In SC, data is encoded in the form of pseudo-random bitstreams, such that the probability of a \u271\u27 in a bitstream corresponds to the numerical value that it represents. SC can enable compact, low-complexity logic implementations of various arithmetic functions. Spintastic establishes the synergy between stochastic computing and spin-based logic by demonstrating that they mutually alleviate each other\u27s limitations. On the one hand, various building blocks of SC, which incur significant overheads in CMOS implementations, can be efficiently realized by exploiting the physical characteristics of spin devices. On the other hand, the reduced logic complexity and low logic depth of SC circuits alleviates the shortcomings of spintronic logic. Based on this insight, the design of spin-based stochastic arithmetic circuits, bitstream generators, bitstream permuters and stochastic-to-binary converter circuits are presented. Spintastic achieves 7.1X energy reduction over CMOS implementations for a wide range of benchmarks from the image processing, signal processing, and RMS application domains. 5) In order to evaluate the proposed spintronic designs, the thesis describes various device-to-architecture modeling frameworks. Starting with devices models that are calibrated to measurements, the characteristics of spintronic devices are successively abstracted into circuit-level and architectural models, which are incorporated into suitable simulation frameworks. (Abstract shortened by UMI.

Adjacent LSTM-Based Page Scheduling for Hybrid DRAM/NVM Memory Systems

Recent advances in memory technologies have led to the rapid growth of hybrid systems that combine traditional DRAM and Non Volatile Memory (NVM) technologies, as the latter provide lower cost per byte, low leakage power and larger capacities than DRAM, while they can guarantee comparable access latency. Such kind of heterogeneous memory systems impose new challenges in terms of page placement and migration among the alternative technologies of the heterogeneous memory system. In this paper, we present a novel approach for efficient page placement on heterogeneous DRAM/NVM systems. We design an adjacent LSTM-based approach for page placement, which strongly relies on page accesses prediction, while sharing knowledge among pages with behavioral similarity. The proposed approach leads up to 65.5% optimized performance compared to existing approaches, while achieving near-optimal results and saving 20.2% energy consumption on average. Moreover, we propose a new page replacement policy, namely clustered-LRU, achieving up to 8.1% optimized performance, compared to the default Least Recently Used (LRU) policy

Bridging the Gap between Application and Solid-State-Drives

Data storage is one of the important and often critical parts of the computing system in terms of performance, cost, reliability, and energy. Numerous new memory technologies, such as NAND flash, phase change memory (PCM), magnetic RAM (STT-RAM) and Memristor, have emerged recently. Many of them have already entered the production system. Traditional storage optimization and caching algorithms are far from optimal because storage I/Os do not show simple locality. To provide optimal storage we need accurate predictions of I/O behavior. However, the workloads are increasingly dynamic and diverse, making the long and short time I/O prediction challenge. Because of the evolution of the storage technologies and the increasing diversity of workloads, the storage software is becoming more and more complex. For example, Flash Translation Layer (FTL) is added for NAND-flash based Solid State Disks (NAND-SSDs). However, it introduces overhead such as address translation delay and garbage collection costs. There are many recent studies aim to address the overhead. Unfortunately, there is no one-size-fits-all solution due to the variety of workloads. Despite rapidly evolving in storage technologies, the increasing heterogeneity and diversity in machines and workloads coupled with the continued data explosion exacerbate the gap between computing and storage speeds. In this dissertation, we improve the data storage performance from both top-down and bottom-up approach. First, we will investigate exposing the storage level parallelism so that applications can avoid I/O contentions and workloads skew when scheduling the jobs. Second, we will study how architecture aware task scheduling can improve the performance of the application when PCM based NVRAM are equipped. Third, we will develop an I/O correlation aware flash translation layer for NAND-flash based Solid State Disks. Fourth, we will build a DRAM-based correlation aware FTL emulator and study the performance in various filesystems

Energy-Aware Data Movement In Non-Volatile Memory Hierarchies

While technology scaling enables increased density for memory cells, the intrinsic high leakage power of conventional CMOS technology and the demand for reduced energy consumption inspires the use of emerging technology alternatives such as eDRAM and Non-Volatile Memory (NVM) including STT-MRAM, PCM, and RRAM. The utilization of emerging technology in Last Level Cache (LLC) designs which occupies a signifcant fraction of total die area in Chip Multi Processors (CMPs) introduces new dimensions of vulnerability, energy consumption, and performance delivery. To be specific, a part of this research focuses on eDRAM Bit Upset Vulnerability Factor (BUVF) to assess vulnerable portion of the eDRAM refresh cycle where the critical charge varies depending on the write voltage, storage and bit-line capacitance. This dissertation broaden the study on vulnerability assessment of LLC through investigating the impact of Process Variations (PV) on narrow resistive sensing margins in high-density NVM arrays, including on-chip cache and primary memory. Large-latency and power-hungry Sense Amplifers (SAs) have been adapted to combat PV in the past. Herein, a novel approach is proposed to leverage the PV in NVM arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time. On the other hand, this dissertation investigates a novel technique to prioritize the service to 1) Extensive Read Reused Accessed blocks of the LLC that are silently dropped from higher levels of cache, and 2) the portion of the working set that may exhibit distant re-reference interval in L2. In particular, we develop a lightweight Multi-level Access History Profiler to effciently identify ERRA blocks through aggregating the LLC block addresses tagged with identical Most Signifcant Bits into a single entry. Experimental results indicate that the proposed technique can reduce the L2 read miss ratio by 51.7% on average across PARSEC and SPEC2006 workloads. In addition, this dissertation will broaden and apply advancements in theories of subspace recovery to pioneer computationally-aware in-situ operand reconstruction via the novel Logic In Interconnect (LI2) scheme. LI2 will be developed, validated, and re?ned both theoretically and experimentally to realize a radically different approach to post-Moore\u27s Law computing by leveraging low-rank matrices features offering data reconstruction instead of fetching data from main memory to reduce energy/latency cost per data movement. We propose LI2 enhancement to attain high performance delivery in the post-Moore\u27s Law era through equipping the contemporary micro-architecture design with a customized memory controller which orchestrates the memory request for fetching low-rank matrices to customized Fine Grain Reconfigurable Accelerator (FGRA) for reconstruction while the other memory requests are serviced as before. The goal of LI2 is to conquer the high latency/energy required to traverse main memory arrays in the case of LLC miss, by using in-situ construction of the requested data dealing with low-rank matrices. Thus, LI2 exchanges a high volume of data transfers with a novel lightweight reconstruction method under specific conditions using a cross-layer hardware/algorithm approach