Modeling Approaches for Active Antenna Transmitters

The rapid growth of data traffic in mobile communications has attracted interest to Multiple-Input-Multiple-Output (MIMO) communication systems at millimeter-wave (mmWave) frequencies. MIMO systems exploit active antenna arrays transmitter configurations to obtain higher energy efficiency and beamforming flexibility. The analysis of transmitters in MIMO systems becomes complex due to the close integration of several antennas and power amplifiers (PAs) and the problems associated with heat dissipation. Therefore, the transmitter analysis requires efficient joint EM, circuit, and thermal simulations of its building blocks, i.e., the antenna array and PAs. Due to small physical spacing at mmWave, bulky isolators cannot be used to eliminate unwanted interactions between PA and antenna array. Therefore, the mismatch and mutual coupling in the antenna array directly affect PA output load and PA and transmitter performance. On the other hand, PAs are the primary source of nonlinearity, power consumption, and heat dissipation in transmitters. Therefore, it is crucial to include joint thermal and electrical behavior of PAs in analyzing active antenna transmitters. In this thesis, efficient techniques for modeling active antenna transmitters are presented. First, we propose a hardware-oriented transmitter model that considers PA load-dependent nonlinearity and the coupling, mismatch, and radiated field of the antenna array. The proposed model is equally accurate for any mismatch level that can happen at the PA output. This model can predict the transmitter radiation pattern and nonlinear signal distortions in the far-field. The model\u27s functionality is verified using a mmWave active subarray antenna module for a beam steering scenario and by performing the over-the-air measurements. The load-pull modeling idea was also applied to investigate the performance of a mmWave spatial power combiner module in the presence of critical coupling effects on combining performance. The second part of the thesis deals with thermal challenges in active antenna transmitters and PAs as the main source of heat dissipation. An efficient electrothermal modeling approach that considers the thermal behavior of PAs, including self-heating and thermal coupling between the IC hot spots, coupled with the electrical behavior of PA, is proposed. The thermal model has been employed to evaluate a PA DUT\u27s static and dynamic temperature-dependent performance in terms of linearity, gain, and efficiency. In summary, the proposed modeling approaches presented in this thesis provide efficient yet powerful tools for joint analysis of complex active antenna transmitters in MIMO systems, including sub-systems\u27 behavior and their interactions

Fully Integrated Electrothermal Multi-Domain Modeling of RF MEMS Switches

RF MEMS switches have demonstrated excellent performance. However, before such switches can be fully implemented, they must demonstrate high reliability and robust power-handling capability. Numerical simulation is a vital part of design to meet these goals. This paper demonstrates a fully integrated electrothermal model of an RF MEMS switch which solves for RF current and switch temperature. The results show that the beam temperature increases with either higher input power or increased frequency. The simulation data are used to predict switch failure due to temperature-related creep and self pull-in over a wide range of operating frequency (0.1-40 GHz) and power input (0-10 W). Self pull-in is found to be the dominant failure mechanism for an example geometry.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87264/4/Saitou33.pd

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature

Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification

In this article, we discuss the accuracy of behavioral models in simulating the intermodulation distortion (IMD) of microwave GaN-based high-power amplifiers in the presence of strong electrothermal (ET) feedback. Exploiting an accurate self-consistent ET model derived from measurements and thermal finite-element method simulations, we show that behavioral models are able to yield accurate results, provided that the model identification is carried out with signals with wide bandwidth and large dynamics

Thin-Film Thermal Conductivity Measurements Using Superconducting Nanowires

We present a simple experimental scheme for estimating the cryogenic thermal transport properties of thin films using superconducting nanowires. In a parallel array of nanowires, the heat from one nanowire in the normal state changes the local temperature around adjacent nanowires, reducing their switching current. Calibration of this change in switching current as a function of bath temperature provides an estimate of the temperature as a function of displacement from the heater. This provides a method of determining the contribution of substrate heat transport to the cooling time of superconducting nanowire single-photon detectors. Understanding this process is necessary for successful electrothermal modeling of superconducting nanowire systems

Force Dependence of RF MEMS Switch Contact Heating

Contact-type RF MEMS switches have demonstrated low on-state resistance, high off-state impedance, and very large bandwidth; however, their power handling capability is low due to failure caused by contact heating. This paper examines contact heating by measuring V-I curves for contacts in gold switches. Multiphysics modeling allows extraction of contact temperature. Contacts are found to soften and self-anneal at a temperature of about 100¡C, corresponding to a contact voltage of about 80 mV. Larger contact force induces a larger decrease in contact resistance during softening, suppressing contact heating. The data provide a better understanding of micro-scale contact physics, leading to design for switches for improved power-handling capability.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87263/4/Saitou88.pd

Impact of self-heating on the statistical variability in bulk and SOI FinFETs

In this paper for the first time we study the impact of self-heating on the statistical variability of bulk and SOI FinFETs designed to meet the requirements of the 14/16nm technology node. The simulations are performed using the GSS ‘atomistic’ simulator GARAND using an enhanced electro-thermal model that takes into account the impact of the fin geometry on the thermal conductivity. In the simulations we have compared the statistical variability obtained from full-scale electro-thermal simulations with the variability at uniform room temperature and at the maximum or average temperatures obtained in the electro-thermal simulations. The combined effects of line edge roughness and metal gate granularity are taken into account. The distributions and the correlations between key figures of merit including the threshold voltage, on-current, subthreshold slope and leakage current are presented and analysed

Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electro-thermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA)   for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. Keywords: SiC MPS Diode, Electro-thermal, SPICE Model

Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electro-thermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA)   for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. Keywords: SiC MPS Diode, Electro-thermal, SPICE Model

Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing