RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Piezoelectric-on-semiconductor Micromechanical Resonators With Linear Acoustic Bandgap Tethers

Microelectromechanical resonators include a resonator body anchored to a substrate by at least one tether containing a coupled-ring linear acoustic bandgap structure therein. The coupled-ring linear acoustic bandgap structure can include a plurality of piezoelectric-on-semiconductor rings connected together by a plurality of piezoelectric-on-semiconductor tether segments. A first electrode may also be provided, which extends on the resonator body and the coupled-ring linear acoustic bandgap structure. This resonator body, which may be suspended opposite a recess in the substrate, may include a semiconductor (e.g., silicon) body having a piezoelectric layer (e.g., AlN) thereon, which extends between the semiconductor body and the first electrode. The coupled-ring linear acoustic bandgap structure may be a periodic structure, where a pitch between each of the plurality of piezoelectric-on-semiconductor rings in the at least one tether is equivalent, or a non-periodic structure.Georgia Tech Research Corporatio

1.5-GHz CMOS Voltage-Controlled Oscillator Based on Thickness-Field-Excited Piezoelectric A1N Contour-Mode MEMS Resonators

This paper reports on the first demonstration of the 1.5 GHz CMOS oscillator based on thickness-field-excited (TFE) piezoelectric AIN MEMS contour-mode resonators (CMRs). The measured phase noise is -85 dBc/Hz at 10 kHz offset frequency and -151 dBc/Hz at 1MHz. This is the highest frequency MEMS oscillator ever reported using a laterally vibrating mechanical resonator. The high frequency operation has been enabled by optimizing the geometrical design and micro-fabrication process of TFE AIN CMRs, so that a low effective motional resistance around 50 Ω is achieved together with a high unloaded quality factor (Qu) approaching 2500 and simultaneously high kt2, up to 1.96%. A tunable-supply oscillator design is proposed for fine frequency tuning (or trimming) over a narrow bandwidth. Teh circuit design enables a novel GHz voltage-controlled oscillator (VCO) without the use of any low-Q tunable component. The 1.5 GHz VCO exhibits a 1500 ppm tuning range by a DC voltage change of 2.5 V. This technique can be utilized for fine frequency trimming and temperature compensation applications

Design and Implementation of Silicon-Based MEMS Resonators for Application in Ultra Stable High Frequency Oscillators

The focus of this work is to design and implement resonators for ultra-stable high-frequency ( \u3e 100MHz) silicon-based MEMS oscillators. Specifically, two novel types of resonators are introduced that push the performance of silicon-based MEMS resonators to new limits. Thin film Piezoelectric-on-Silicon (TPoS) resonators have been shown to be suitable for oscillator applications due to their combined high quality factor, coupling efficiency, power handling and doping-dependent temperature-frequency behavior. This thesis is an attempt to utilize the TPoS platform and optimize it for extremely stable high-frequency oscillator applications. To achieve the said objective, two main research venues are explored. Firstly, quality factor is systematically studied and anisotropy of single crystalline silicon (SCS) is exploited to enable high-quality factor side-supported radial-mode (aka breathing mode) TPoS disc resonators through minimization of anchor-loss. It is then experimentally demonstrated that in TPoS disc resonators with tethers aligned to [100], unloaded quality factor improves from ~450 for the second harmonic mode at 43 MHz to ~11,500 for the eighth harmonic mode at 196 MHz. Secondly, thickness quasi-Lamé modes are studied and demonstrated in TPoS resonators for the first time. It is shown that thickness quasi-Lamé modes (TQLM) could be efficiently excited in silicon with very high quality factor (Q). A quality factor of 23.2 k is measured in vacuum at 185 MHz for a fundamental TQLM-TPoS resonators designed within a circular acoustic isolation frame. Quality factor of 12.6 k and 6 k are also measured for the second- and third- harmonic TQLM TPoS resonators at 366 MHz and 555 MHz respectively. Turn-over temperatures between 40 °C to 125 °C are also designed and measured for TQLM TPoS resonators fabricated on degenerately N-doped silicon substrates. The reported extremely high quality factor, very low motional resistance, and tunable turn-over temperatures \u3e 80 °C make these resonators a great candidate for ultra-stable oven-controlled high-frequency MEMS oscillators

Frequency Stability in Thin-film Piezoelectric-on-substrate Oscillators

For many years, crystal oscillators have been used as the de facto frequency reference in almost all electronic platforms because they offer excellent stability and superior phase noise. This is mainly due to the high quality factor (Q) and exceptional temperature stability of quartz crystals. However, the size of quartz resonators is relatively large, and they cannot be readily integrated with microelectronics. This ultimately impedes the complete integration of the high-performance oscillators with the electronics. Achieving such integration will enable frequency control devices with a smaller form factor, lower cost, greater flexibility, and potentially higher reliability. Microelectromechanical systems (MEMS) resonator technology is gradually gaining popularity as a solution for the integration barrier and high-performance micro-machined oscillators have been presented by researchers and companies recently. However, one of the most important drawbacks of MEMS resonators has been their relatively large and linear temperature coefficient of frequency (TCF) (e.g., around -30 ppm/C for Si-based). The subject of this presentation is on the frequency stability in thin-film piezoelectric-on-substrate oscillators (TPoS). In this regard, jitter and temperature dependency of the oscillation frequency are studied. The dependency of jitter of TPoS on the resonator characteristics (i.e. quality factor and motional impedance) is studied where the results provide experimental validation for the suppression of overall oscillator circuit noise through the operation of the resonator beyond the bifurcation.A novel temperature compensation technique for silicon-based lateral-extensional MEMS oscillators is introduced, which is based on the properly orienting an extensional-mode resonator on a highly doped n-type silicon substrate. The existence of a local zero temperature coefficient of frequency (i.e., turnover point) in extensional-mode silicon microresonators, fabricated on highly n-type-doped substrates and aligned to the [100] crystalline orientation is demonstrated. It is shown that the turnover point in TPoS resonators is a function of doping concentration and orientation. Moreover, the turnover point can be adjusted by changing the thickness ratio of Si and the piezoelectric film (e.g., AlN) in the resonant structure. MEMS oscillators with controlled temperature coefficient of frequency (TCF), assembled through mixing the frequencies of two oscillators that are made of silicon micro-resonators with known and dissimilar TCF, are also introduced. Based on this method, a TPoS MEMS oscillator is assembled in which the first-order TCF is virtually cancelled resulting in a parabolic TCF curve (second-order TCF).The frequency tuning in TPoS resonators is also reported which results show a great potential application in temperature compensated oscillators. Tuning is demonstrated through varying the termination load connected to an isolated tuning port. The dependency of frequency tuning on the design features of the resonator is studied as well.Electrical Engineerin

Gallium Nitride Integrated Microsystems for Radio Frequency Applications.

The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd

Piezoelectric Fused Silica Resonators for Timing References.

MEMS resonators have the capability to match or exceed the performance of state-of-the-art quartz timing references at a fraction of the size, power, and cost. To enable this capability, this work investigates the use of fused silica as a substrate for piezoelectrically actuated resonators for applications in timing references. This thesis presents the design and fabrication of a piezoelectrically actuated fused silica resonator. The fabricated resonators show a quality factor (Q) of 19,671 at 4.96 MHz with an insertion loss of 16.9 dB, and is the first reported example of a piezoelectrically actuated fused silica resonator in literature. An in-depth investigation into loss mechanisms in fused silica is performed in order to identify and address the major losses in the device and maximize potential performance. Multiple experimental and analytical investigations are presented, with a new form of loss, known as charge redistribution, presented as a possible dominant loss in these piezoelectric resonators. This loss mechanism is analytically modeled and simulated to have a Q of 25,100, within 20% of the experimentally measured devices. The temperature sensitivity of fused silica is also addressed; as fused silica shows a temperature coefficient of elasticity almost three times higher than that shown in uncompensated silicon. Both active and passive methods of temperature compensation are implemented, including a fused silica ovenized platform and nickel-refilled trenches for temperature compensation. The nickel-refilled trenches are shown to reduce temperature sensitivity in piezoelectrically actuated fused silica resonators from 78 ppm/K to 50 ppm/K, with larger compensation possible but complete compensation infeasible from passive techniques alone. From this, a dual-mode system is proposed for use in ovenized systems where two modes are simultaneously activated in a single device volume. In this system, one mode acts as a stable reference frequency and the second mode acts as a temperature sensor, allowing for extremely accurate ovenization. A silicon-based prototype is developed, showing a +14 ppm/K temperature difference between the two modes, with additional temperature differential possible through the addition of material-based passive compensation.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135878/1/peczalsk_1.pd

1.05-GHz CMOS Oscillator Based on Lateral-Field-Excited Piezoelectric AlN Contour-Mode MEMS Resonators

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contour-mode resonators. The oscillator shows a phase noise level of −81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of −146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-μm complementary metal-oxide-semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that are based on film bulk acoustic resonator (FBAR), surface acoustic wave (SAW), and CMOS on-chip inductor and capacitor (CMOS LC) technologies. A simple 2-mask process was used to fabricate the LFE AlN resonators operating between 843 MHz and 1.64 GHz with simultaneously high Q (up to 2,200) and kt2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make these devices suitable for post-CMOS integrated on-chip direct gigahertz frequency synthesis in reconfigurable multiband wireless communications

Damping of piezoelectric MEMS oscillators – fundamentals and applications

A limiting parameter for the performance of micromechanical oscillators is the damping induced by the surrounding medium. In this work, the damping losses of micromechanical oscillators with piezoelectric actuation and detection are investigated in nine different gas atmospheres over a pressure range of six decades. In addition, the influence of the distance to a spatial boundary is examined, covering a range from narrow gaps with squeeze film damping to an almost freely oscillating structure. This reveals a superposition of four different damping mechanisms, which occur in varying strength depending on pressure, distance and eigenmode. Using an analytical approach, the individual damping phenomena can be separated from each other and subsequently evaluated in a targeted manner. Based on these results, new insights are gained for the molecular flow regime as well as the transitional flow regime, which include the impact of the number of active degrees of freedom of the gas molecules as well as thermal resonance effects. In addition, an electrical equivalent circuit was designed for the entire measurement range, which shows very good agreement with the experimental data. Finally, the damping effects are exploited for applications in sensor technology and a wide range pressure sensor using the nonlinear regime of the oscillators as well as a concept for the measurement of the oxygen concentration are presented.Eine für die Leistungsfähigkeit mikromechanischer Oszillatoren limitierende Größe stellt die Dämpfung durch das umgebende Medium dar. In dieser Arbeit werden daher die Dämpfungsverluste mikromechanischer Oszillatoren mit piezoelektrischer Anregung und Detektion in neun verschiedenen Gasatmosphären über einen Druckbereich von sechs Dekaden untersucht. Zusätzlich wird der Einfluss des Abstandes zu einer räumlichen Begrenzung betrachtet und dabei ein Bereich von engen Spalten mit Squeeze Film Dämpfung bis hin zu fast frei schwingenden Strukturen untersucht. Dabei ergibt sich eine Überlagerung von vier verschiedenen Dämpfungsmechanismen, welche in Abhängigkeit von Druck, Abstand und Eigenmode in unterschiedlich starker Ausprägung auftreten. Durch einen analytischen Ansatz lassen sich die einzelnen Dämpfungsphänomene voneinander separieren und in der Folge gezielt auswerten. Anhand dieser Ergebnisse wurden für den molekularen sowie den Übergangsbereich neue Erkenntnisse gewonnen, welche die Anzahl aktiver Freiheitsgrade der Gasmoleküle sowie thermische Resonanzeffekte miteinbeziehen. Darüber hinaus wurde für den gesamten Messbereich ein elektrisches Ersatzschaltbild konzipiert, das eine sehr gute Übereinstimmung mit den experimentellen Daten zeigt. Abschließend werden die Dämpfungseffekte für Anwendungen in der Sensorik erschlossen und ein Mehrbereichsdrucksensor mit Hilfe des nichtlinearen Bereichs der Oszillatoren sowie ein Konzept zur Messung des Sauerstoffgehaltes präsentiert.German Research Foundation (DFG