Effect of Thermal Gradients on the Electromigration Lifetime in Power Electronics

The combined effects of electromigration and thermomigration are studied. Significantly shorter electromigration lifetimes are observed in the presence of a temperature gradient. This cannot be explained by thermomigration only, but is attributed to the effect of temperature gradient on electromigration-induced failures

Nonlinear wavelength selection in surface faceting under electromigration

We report on the control of the faceting of crystal surfaces by means of surface electromigration. When electromigration reinforces the faceting instability, we find perpetual coarsening with a wavelength increasing as $t^{1/2}$. For strongly stabilizing electromigration, the surface is stable. For weakly stabilizing electromigration, a cellular pattern is obtained, with a nonlinearly selected wavelength. The selection mechanism is not caused by an instability of steady-states, as suggested by previous works in the literature. Instead, the dynamics is found to exhibit coarsening {\it before} reaching a continuous family of stable non-equilibrium steady-states.Comment: 5 pages, 4 figures, submitte

Theory for the electromigration wind force in dilute alloys

A multiple scattering formulation for the electromigration wind force on atoms in dilute alloys is developed. The theory describes electromigration via a vacancy mechanism. The method is used to calculate the wind valence for electromigration in various host metals having a close-packed lattice structure, namely aluminum, the noble metals copper, silver and gold and the $4d$ transition metals. The self-electromigration results for aluminum and the noble metals compare well with experimental data. For the $4d$ metals small wind valences are found, which make these metals attractive candidates for the experimental study of the direct valence.Comment: 18 pages LaTeX, epsfig, 8 figures. to appear in Phys. Rev. B 56 of 15/11/199

The role of Joule heating in the formation of nanogaps by electromigration

We investigate the formation of nanogaps in gold wires due to electromigration. We show that the breaking process will not start until a local temperature of typically 400 K is reached by Joule heating. This value is rather independent of the temperature of the sample environment (4.2-295 K). Furthermore, we demonstrate that the breaking dynamics can be controlled by minimizing the total series resistance of the system. In this way, the local temperature rise just before break down is limited and melting effects are prevented. Hence, electrodes with gaps < 2 nm are easily made, without the need of active feedback. For optimized samples, we observe quantized conductance steps prior the gap formation.Comment: including 7 figure

Tailoring palladium nanocontacts by electromigration

Electromigration is employed in nanoelectronics for transforming narrow metallic wires into electrodes separated by a few nanometers gap. In this work, we fabricate either nanoconstrictions or nanogap electrodes by performing electromigration in palladium nanowires. The device resistance and the cross section of the initial nanowires allow us to regulate the conditions for transforming deterministically each nanowire in a specific final device. The resulting samples show unique electrical transport characteristics and could be used in multiple nanoelectronics research applications, from ballistic transport to electrodes for single molecular devices.Fil: Arzubiaga, Libe. CIC nanoGUNE; EspañaFil: Golmar, Federico. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, Roger. CIC nanoGUNE; EspañaFil: Casanova, Félix. CIC nanoGUNE; España. Basque Foundation for Science; EspañaFil: Hueso, Luis E.. CIC nanoGUNE; España. Basque Foundation for Science; Españ

Accelerating Electromigration Aging: Fast Failure Detection for Nanometer ICs

For practical testing and detection of electromigration (EM) induced failures in dual damascene copper interconnects, one critical issue is creating stressing conditions to induce the chip to fail exclusively under EM in a very short period of time so that EM sign-off and validation can be carried out efficiently. Existing acceleration techniques, which rely on increasing temperature and current densities beyond the known limits, also accelerate other reliability effects making it very difficult, if not impossible, to test EM in isolation. In this article, we propose novel EM wear-out acceleration techniques to address the aforementioned issue. First we show that multi-segment interconnects with reservoir and sink structures can be exploited to significantly speedup the EM wear-out process. Based on this observation, we propose three strategies to accelerate EM induced failure: reservoir-enhanced acceleration, sink-enhanced acceleration, and a hybrid method that combines both reservoir and sink structures. We then propose several configurable interconnect structures that exploit atomic reservoirs and sinks for accelerated EM testing. Such configurable interconnect structures are very flexible and can be used to achieve significant lifetime reductions at the cost of some routing resources. Using the proposed technique, EM testing can be carried out at nominal current densities, and at a much lower temperature compared to traditional testing methods. This is the most significant contribution of this work since, to our knowledge, this is the only method that allows EM testing to be performed in a controlled environment without the risk of invoking other reliability effects that are also accelerated by elevated temperature and current density. Simulation results show that, using the proposed method, we can reduce the EM lifetime of a chip from 10 years down to a few hours 10^5X acceleration under the 150C temperature limit, which is sufficient for practical EM testing of typical nanometer CMOS ICs