Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> dielectric

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.Peer reviewe

2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O <inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectrics

The effects of 2 MeV electron irradiation on the electrical characteristics of atomic layer deposited (ALD) high permittivity (high-k) layers of Al 2O3, HfO2 and a nanolaminate of them are evaluated. Metal-oxide-semiconductor capacitors with a nominal dielectric physical thickness of 10 nm were fabricated on different p-type and n-type silicon substrates. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the different structures are analyzed as a function of electron irradiation. A progressive negative shift of the C-V characteristics is observed with increasing electron irradiation, indicating the generation of effective positive charges. Similar generation rates for effective trapped charges and interface states are obtained for all the different high-k dielectric layers studied. The hysteresis of the C-V curves after irradiation increases in the case of Al2O3 samples, for HfO 2 decreases while the irradiation has little impact on the hysteresis of the nanolaminate stack. A progressive increase of the leakage current with electron irradiation dose is observed for all the studied dielectrics. The analysis of the current-voltage characteristics measured at different temperatures point to Poole-Frenkel as the dominant conduction mechanism. Under the studied conditions, no impact of electron irradiation fluence on dielectric breakdown voltage has been appreciated. © 2012 Elsevier Ltd. All rights reserved.Peer reviewe

Electrical characteristics of high-energy proton irradiated, ultra-thin gate oxides

This paper presents the first results of an investigation of the effect of high-energy proton irradiations on the electrical characteristics of ultra-thin gate oxides. By means of the analysis of the electrical conduction in irradiated MOS capacitors it is shown that the radiation-induced leakage current is similar to the one obtained by electrical stress. In addition the damage created in the oxide by proton radiation has a similar nature as revealed by electrical stressing of irradiated devices. © 2002 Elsevier Science Ltd. All rights reserved.Peer reviewe