Robust estimation of directions-of-arrival in diffuse noise based on matrix-space sparsity

We consider the estimation of the Directions-Of-Arrival (DOA) of target signals in diffuse noise. The state-of-the-art MUltiple SIgnal Classification (MUSIC) algorithm necessitates accurate identification of the signal subspace. In diffuse noise, however, it is difficult to identify it directly from the observed spatial covariance matrix. In our approach, we estimate the target spatial covariance matrix, so that we can identify the orthogonal complement of the signal subspace as its null space. We present a unified framework for modeling noise covariance in a matrix space, which generalizes four state-of-the-art diffuse noise models. We propose two alternative algorithms for estimating the target spatial covariance matrix, namely Low-rank Matrix Completion (LMC) and Trace Norm Minimization (TNM). These rely on denoising of the observed spatial covariance matrix via orthogonal projection onto the orthogonal complement of the noise matrix subspace. The missing component lying in the noise matrix subspace is then completed by exploiting the low-rankness of the target spatial covariance matrix. Large-scale experiments with real-world noise show that TNM with a certain noise model outperforms conventional MUSIC based on Generalized EigenValue Decomposition (GEVD) by 5% in terms of the precision averaged over the dataset

Blind suppression of nonstationary diffuse noise based on spatial covariance matrix decomposition

International audienceWe propose methods for blind suppression of nonstationary diffuse noise based on decomposition of the observed spatial covariance matrix into signal and noise parts. In modeling noise to regularize the ill-posed decomposition problem, we exploit spatial invariance (isotropy) instead of temporal invariance (stationarity). The isotropy assumption is that the spatial cross-spectrum of noise is dependent on the distance between microphones and independent of the direction between them. We propose methods for spatial covariance matrix decomposition based on least squares and maximum likelihood estimation. The methods are validated on real-world recordings

Electrophysiologic assessment of (central) auditory processing disorder in children with non-syndromic cleft lip and/or palate

Session 5aPP - Psychological and Physiological Acoustics: Auditory Function, Mechanisms, and Models (Poster Session)Cleft of the lip and/or palate is a common congenital craniofacial malformation worldwide, particularly non-syndromic cleft lip and/or palate (NSCL/P). Though middle ear deficits in this population have been universally noted in numerous studies, other auditory problems including inner ear deficits or cortical dysfunction are rarely reported. A higher prevalence of educational problems has been noted in children with NSCL/P compared to craniofacially normal children. These high level cognitive difficulties cannot be entirely attributed to peripheral hearing loss. Recently it has been suggested that children with NSCLP may be more prone to abnormalities in the auditory cortex. The aim of the present study was to investigate whether school age children with (NSCL/P) have a higher prevalence of indications of (central) auditory processing disorder [(C)APD] compared to normal age matched controls when assessed using auditory event-related potential (ERP) techniques. School children (6 to 15 years) with NSCL/P and normal controls with matched age and gender were recruited. Auditory ERP recordings included auditory brainstem response and late event-related potentials, including the P1-N1-P2 complex and P300 waveforms. Initial findings from the present study are presented and their implications for further research in this area —and clinical intervention—are outlined. © 2012 Acoustical Society of Americapublished_or_final_versio

3D mapping of nanoscale physical properties of VCSEL devices

There is clear lack of methods that allows studies of the nanoscale structure of the VCSEL devices1 that are mainly focused on the roughness of the DBR, or using FIB cross-sectioning and TEM analysis of failed devices to observe the mechanism of the degradation. Here we present a recently developed advanced approach that combines Ar-ion nano-cross-sectioning with material sensitive SPM2 to reveal the internal structure of the VCSEL across the whole stack of top and bottom DBR including active area. We report for the first time the direct observation of local mechanical properties, electric potential and conductance through the 3D VCSEL stack. In order to achieve this, we use beam exit cross-section polishing that creates an oblique section with sub-nm surface roughness through the whole VCSEL structure that is fully suitable for the subsequent cross-sectional SPM (xSPM) studies. We used three different SPM measurement modes – nanomechanical local elastic moduli mapping via Ultrasonic Force Microscopy (UFM) 3, surface potential mapping via Kelvin Probe Force Microscopy (KPFM) and mapping of injected current (local conductivity) via Scanning Spreading Resistance Microscopy (SSRM). xSPM allowed to observe the resulting geometry of the whole device, including active cavity multiple quantum wells (MQW), to obtain profiles of differential doping of the DBR stack, profile of electric potential in the active cavity, and spatial variation of current injection in the individual QW in MQW area. Moreover, by applying forward bias to the VCSEL to initiate laser emission, we were able to observe distribution of the potential in the working regime, paving the way to understanding the 3D current flow in the complete device. Finally, we use finite element modelling (FEM) that confirm the experimental results that of the measurements of the local doping profiles and charge distribution in the active area of the VCSEL around the oxide current confinement aperture. While we show that the new xSPM methodology allowed advanced in-situ studies of VCSELs, it establishes a highly efficient characterisation platform for much broader area of compound semiconductor materials and devices. REFERENCES. 1. D. T. Mathes, R. Hull, K. Choquette, K. Geib, A. Allerman, J. Guenter, B. Hawkins and B. Hawthorne, in Vertical-Cavity Surface-Emitting Lasers Vii, edited by C. Lei and S. P. Kilcoyne (2003), Vol. 4994, pp. 67-82. 2. A. J. Robson, I. Grishin, R. J. Young, A. M. Sanchez, O. V. Kolosov and M. Hayne, Acs Applied Materials & Interfaces 5 (8), 3241-3245 (2013). 3. J. L. Bosse, P. D. Tovee, B. D. Huey and O. V. Kolosov, Journal of Applied Physics 115 (14), 144304 (2014)