Joint measurement of multiple noncommuting parameters

Although quantum metrology allows us to make precision measurements beyond the standard quantum limit, it mostly works on the measurement of only one observable due to the Heisenberg uncertainty relation on the measurement precision of noncommuting observables for one system. In this paper, we study the schemes of joint measurement of multiple observables which do not commute with each other using the quantum entanglement between two systems. We focus on analyzing the performance of a SU(1,1) nonlinear interferometer on fulfilling the task of joint measurement. The results show that the information encoded in multiple noncommuting observables on an optical field can be simultaneously measured with a signal-to-noise ratio higher than the standard quantum limit, and the ultimate limit of each observable is still the Heisenberg limit. Moreover, we find a resource conservation rule for the joint measurement

A broadband VLBI system using transportable stations for geodesy and metrology: an alternative approach to the VGOS concept

open25openSekido, Mamoru; Takefuji, Kazuhiro; Ujihara, Hideki; Kondo, Tetsuro; Tsutsumi, Masanori; Kawai, Eiji; Hachisu, Hidekazu; Nemitz, Nils; Pizzocaro, Marco; Clivati, Cecilia; Perini, Federico; Negusini, Monia; Maccaferri, Giuseppe; Ricci, Roberto; Roma, Mauro; Bortolotti, Claudio; Namba, Kunitaka; Komuro, Jun’ichi; Ichikawa, Ryuichi; Suzuyama, Tomonari; Watabe, Ken-ichi; Leute, Julia; Petit, Gérard; Calonico, Davide; Ido, TetsuyaSekido, Mamoru; Takefuji, Kazuhiro; Ujihara, Hideki; Kondo, Tetsuro; Tsutsumi, Masanori; Kawai, Eiji; Hachisu, Hidekazu; Nemitz, Nils; Pizzocaro, Marco; Clivati, Cecilia; Perini, Federico; Negusini, Monia; Maccaferri, Giuseppe; Ricci, Roberto; Roma, Mauro; Bortolotti, Claudio; Namba, Kunitaka; Komuro, Jun’Ichi; Ichikawa, Ryuichi; Suzuyama, Tomonari; Watabe, Ken-ichi; Leute, Julia; Petit, Gérard; Calonico, Davide; Ido, Tetsuy

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

Real-time virtual metrology and control for plasma etch

Plasma etch is a semiconductor manufacturing process during which material is removed from the surface of semiconducting wafers, typically made of silicon, using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously difficult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to control plasma electron density and plasma etch rate in the presence of disturbances to the ground path of the chamber. Virtual metrology (VM) models, using plasma impedance measurements, are used to estimate the plasma electron density and plasma etch rate in real time for control, eliminating the requirement for invasive measurements. The virtual metrology and control schemes exhibit fast set-point tracking and disturbance rejection capabilities. Etch rate can be controlled to within 1% of the desired value. Such control represents a significant improvement over open-loop operation of etch tools, where variances in etch rate of up to 5% can be observed during production processes due to disturbances in tool state and material properties

Integrated performance prediction and quality control in manufacturing systems

textPredicting the condition of a degrading dynamic system is critical for implementing successful control and designing the optimal operation and maintenance strategies throughout the lifetime of the system. In many situations, especially in manufacturing, systems experience multiple degradation cycles, failures, and maintenance events throughout their lifetimes. In such cases, historical records of sensor readings observed during the lifecycle of a machine can yield vital information about degradation patterns of the monitored machine, which can be used to formulate dynamic models for predicting its future performance. Besides the ability to predict equipment failures, another major component of cost effective and high-throughput manufacturing is tight control of product quality. Quality control is assured by taking periodic measurements of the products at various stages of production. Nevertheless, quality measurements of the product require time and are often executed on costly measurement equipment, which increases the cost of manufacturing and slows down production. One possible way to remedy this situation is to utilize the inherent link between the manufacturing equipment condition, mirrored in the readings of sensors mounted on that machine, and the quality of products coming out of it. The concept of Virtual Metrology (VM) addresses the quality control problem by using data-driven models that relate the product quality to the equipment sensors, enabling continuous estimation of the quality characteristics of the product, even when physical measurements of product quality are not available. VM can thus bring significant production benefits, including improved process control, reduced quality losses and higher productivity. In this dissertation, new methods are formulated that will combine long-term performance prediction of sensory signatures from a degrading manufacturing machine with VM quality estimation, which enables integration of predictive condition monitoring (prediction of sensory signatures) with predictive manufacturing process control (predictive VM model). The recently developed algorithm for prediction of sensory signatures is capable of predicting the system condition by comparing the similarity of the most recent performance signatures with the known degradation patterns available in the historical records. The method accomplishes the prediction of non-Gaussian and non-stationary time-series of relevant performance signatures with analytical tractability, which enables calculations of predicted signature distributions with significantly greater speeds than what can be found in literature. VM quality estimation is implemented using the recently introduced growing structure multiple model system paradigm (GSMMS), based on the use of local linear dynamic models. The concept of local models enables representation of complex, non-linear dependencies with non-Gaussian and non-stationary noise characteristics, using a locally tractable model representation. Localized modeling enables a VM that can detect situations when the VM model is not adequate and needs to be improved, which is one of the main challenges in VM. Finally, uncertainty propagation with Monte Carlo simulation is pursued in order to propagate the predicted distributions of equipment signatures through the VM model to enable prediction of distributions of the quality variables using the readily available sensor readings streaming from the monitored manufacturing machine. The newly developed methods are applied to long-term production data coming from an industrial plasma-enhanced chemical vapor deposition (PECVD) tool operating in a major semiconductor manufacturing fab.Mechanical Engineerin

Spectral purity transfer with 5 × 10−17 instability at 1 s using a multibranch Er:fiber frequency comb

In this work we describe the spectral purity transfer between a 1156 nm ultrastable laser and a 1542 nm diode laser by means of an Er:fiber multibranch comb. By using both the master laser light at 1156 nm and its second-harmonic at 578 nm, together with the 1542 nm slave laser, we investigate the residual noise between the main comb output, the octave-spanning output, and a wavelength conversion module including non-linear fibers, second-harmonic generation crystal and amplifiers. With an ultimate stability of the system at the level of 5E−17 at 1 s and accuracy of 3E−19, this configuration can sustain spectral transfer at the level required by the contemporary optical clocks with a simple and robust setup