An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications

Design and simulation of a low voltage wide band RF MEMS switch

This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.<br /

Design, Simulation of Low Actuation RF MEMS Shunt Switches With Electromagnetic Characterization

Micro Electro Mechanical Systems (MEMS) is an integration of sensors, actuators, microstructures and microelectronics. Components of MEMS that comprises of moving sub milli-meter sized parts, capable of providing Radio Frequency (RF) functionality are collectively referred as RF MEMS. In this work, low actuation RF MEMS switches have been designed and simulated and they have also been analysed for electromagnetic characterization. The switches so analyzed show an actuation voltage of as low as 2V. The electromagnetic analysis gives an isolation of as high as 55-65dB and a very low insertion loss of 0.01dB. DOI: 10.17762/ijritcc2321-8169.15068

Design and simulation of a low-actuation-voltage MEMS switch

This paper presents a low-actuation-voltage micro-electro-mechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V

5-Bit RF MEMS Phase Shifter Development in Ku Band for Phased Array Applications

MEMS based devices represent an extremely attractive alternative to MESFET devices for realization of the programmable phase shifters. The stable operation of RF MEMS devices is impacted by the actuation voltage, restoration force and the structural stresses. These can induce severe functional deformities into the device leading to operational problems. These parameters can be optimized by the concept of built-in reliability through design. In the present work, the study of Ku band 5-bit MEMS phase shifter was associated with the switch development. The hybrid design topology of switched and loaded line was adopted for the phase shifter. This topology has been the best trade off among large phase shift, low loss and reduced space requirement in the defined frequency band. This approach requires 18 switches per 5-bit phase shifter and all must work simultaneously in order to achieve the phase shifter fully functional. Hence the study was initiated with switch development keeping the focus on the above mentioned parameters

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

The design of RF-MEMS Switch is useful for future artificial intelligence applications. Radio detection and range estimation has been employed with RF MEMS technology. Attenuators, limiters, phase shifters, T/R switches, and adjustable matching networks are components of RF MEMS. The proposed RF MEMS technology has been introduced in T/R modules, lenses, reflect arrays, sub arrays and switching beam formers. The uncertain RF MEMS switches have been faced many issues like switching and voltage alterations. This study aims in the direction of design, simulation, model along with RF MEMS switching analysis including consistent curving or meandering. The proposed RF MEMS Switch is a flexure form of the Meanders that attain minimal power in nominal voltage. Moreover, this research work highlights the materials assortment in case of beam along with signal-based dielectric. The performance analysis is demonstrated for various materials that have been utilized in the design purpose. Further, better isolation is accomplished at the range of -31dB necessary regarding 8.06V pull-in voltage through a spring constant valued at 3.588N/m, switching capacitance analysis has been found to be 103 fF at ON state and 7.03pF at OFF state and the proposed switch is optimized to work at 38GHz. The designed RF MEMS switch is giving 30% voltage improvement; switching frequency is improved by 21.32% had been attained, which are outperformance the methodology and compete with present technology

RF-MEMS switches for a full control of the propagating modes in uniplanar microwave circuits and their application to reconfigurable multimodal microwave filters

This is a copy of the author 's final draft version of an article published in the journal Microsystem technologies. The final publication is available at Springer via http://dx.doi.org/10.1007/s00542-017-3379-8In this paper, new RF-MEMS switch configurations are proposed to enable control of the propagating (even and odd) modes in multimodal CPW transmission structures. Specifically, a switchable air bridge (a switchable short-circuit for the CPW odd mode) and switchable asymmetric shunt impedances (for transferring energy between modes) are studied and implemented using bridge-type and cantilever-type ohmic-contact switches, respectively. The switchable air bridge is based in a novel double ohmic-contact bridge-type structure. Optimized-shape suspension configurations, namely folded-beam or diagonal-beam for bridge-type switches, and straight-shaped or semicircular-shaped for cantilever-type switches, are used to obtain robust structures against fabrication-stress gradients. The switches are modelled using a coupled-field 3D finite-element mechanical analysis showing a low to moderate pull-in voltage. The fabricated switches are experimentally characterized using S-parameter and DC measurements. The measured pull-in voltages agree well with the simulated values. From S-parameter measurements, an electrical model with a very good agreement for both switch states (ON and OFF) has been obtained. The model is used in the design of reconfigurable CPW multimodal microwave filters.Peer ReviewedPostprint (author's final draft

RF-MEMS Switches Designed for High-Performance Uniplanar Microwave and mm-Wave Circuits

Radio frequency microelectromechanical system (RF-MEMS) switches have demonstrated superior electrical performance (lower loss and higher isolation) compared to semiconductor-based devices to implement reconfigurable microwave and millimeter (mm)-wave circuits. In this chapter, electrostatically actuated RF-MEMS switch configurations that can be easily integrated in uniplanar circuits are presented. The design procedure and fabrication process of RF-MEMS switch topologies able to control the propagating modes of multimodal uniplanar structures (those based on a combination of coplanar waveguide (CPW), coplanar stripline (CPS), and slotline) will be described in detail. Generalized electrical (multimodal) and mechanical models will be presented and applied to the switch design and simulation. The switch-simulated results are compared to measurements, confirming the expected performances. Using an integrated RF-MEMS surface micromachining process, high-performance multimodal reconfigurable circuits, such as phase switches and filters, are developed with the proposed switch configurations. The design and optimization of these circuits are discussed and the simulated results compared to measurements

RF-MEMS switches with AlN dielectric and their applications

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickel-suspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very promising figures of merit of all fabricated demonstrators from 5 to 40GH