Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems

In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and -6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as -37.21 and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between -6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm(2) on Si substrate, including DC, digital and RF pads

A New Technique for the Design of Multi-Phase Voltage Controlled Oscillators

© 2017 World Scientific Publishing Company.In this work, a novel circuit structure for second-harmonic multi-phase voltage controlled oscillator (MVCO) is presented. The proposed MVCO is composed of (Formula presented.) ((Formula presented.) being an integer number and (Formula presented.)2) identical inductor–capacitor ((Formula presented.)) tank VCOs. In theory, this MVCO can provide 2(Formula presented.) different phase sinusoidal signals. A six-phase VCO based on the proposed structure is designed in a TSMC 0.18(Formula presented.)um CMOS process. Simulation results show that at the supply voltage of 0.8(Formula presented.)V, the total power consumption of the six-phase VCO circuit is about 1(Formula presented.)mW, the oscillation frequency is tunable from 2.3(Formula presented.)GHz to 2.5(Formula presented.)GHz when the control voltage varies from 0(Formula presented.)V to 0.8(Formula presented.)V, and the phase noise is lower than (Formula presented.)128(Formula presented.)dBc/Hz at 1(Formula presented.)MHz offset frequency. The proposed MVCO has lower phase noise, lower power consumption and more outputs than other related works in the literature.Peer reviewedFinal Accepted Versio

Design of a 3 GHz fine resolution LC DCO

In this thesis, the design of a fine resolution LC digitally controlled oscillator (DCO) is introduced. Two NMOS varactor banks are used to achieve 12 bits medium and fine frequency tuning. Both delta-sigma modulator and capacitive divider circuit are implemented to achieve a finer resolution and a larger dynamic range. The LC-oscillator has a coarse tuning range from 3.05 GHz to 3.85 GHz and a fine tuning range of 50MHz. It features a phase noise level of -115dBc/Hz at 1MHz frequency offset and consumes 5.4mW. Efficient simulation methodology is explored. Finally, this DCO is simulated in an All-Digital Phase Locked Loop (ADPLL) with other ideal behavior blocks implemented using Verilog-A, and the performance of the DCO is evaluated.Electrical and Computer Engineerin

Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology

In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). Phase noise is -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.5 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained utilizing accumulation-mode varactors. Phase noise is relatively low due to taking the advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. The circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit occupies an area of 0.6 mm2 on Si substrate including RF and DC pads

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

Low-Jitter Clock Multiplication: a Comparioson between PLLs and DLLs

This paper shows that, for a given power budget, a practical phase-locked loop (PLL)-based clock multiplier generates less jitter than a delay-locked loop (DLL) equivalent. This is due to the fact that the delay cells in a PLL ring-oscillator can consume more power per cell than their counterparts in the DLL. We can show that this effect is stronger than the notorious jitter accumulation effect that occurs in the voltage-controlled oscillator (VCO) of a PLL. First, an analysis of the stochastic-output jitter of the architectures, due to the most important noise sources, is presented. Then, another important source of jitter in a DLL-based clock multiplier is treated, namely the stochastic mismatch in the delay cells which compose the DLL voltage-controlled delay line (VCDL). An analysis is presented that relates the stochastic spread of the delay of the cells to the output jitter of the clock multiplier. A circuit design technique, called impedance level scaling, is then presented which allows the designer to optimize the noise and mismatch behavior of a circuit, independently from other specifications such as speed and linearity. Applying this technique on a delay cell design yields a direct tradeoff between noise induced jitter and power usage, and between stochastic mismatch induced jitter and power usage

A 4.5-5.8 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology

In this paper, design and realization of a 4.5-5.8 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). A linear, 1300 MHz tuning range is measured with accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits leading to a total power dissipation of 56 mW. Post-layout phase noise is simulated -110.7 dBc/Hz at 1MHz offset from 5.8 GHz carrier frequency and -113.4 dBc/Hz from 4.5 GHz carrier frequency. Phase noise measurements will be updated in the final manuscript. The circuit occupies an area of 0.6 mm2 on Si substrate including RF and DC pads

DESIGN OF A FOUR STAGES VCO USING A NOVEL DELAY CIRCUIT FOR OPERATION IN DISTRIBUTED BAND FREQUENCIES

The manuscript proposes a novel architecture of a delay cell that is implemented in 4-stage VCO which has the ability to operate in two distributed frequency bands. The operating frequency is chosen based on the principle of carrier mobility and the transistor resistance. The VCO uses dual delay input techniques to improve the frequency of operation. The design is implemented in Cadence 90nm GPDK CMOS technology and simulated results show that it is capable of operating in dual frequency bands of 55 MHz to 606 MHz and 857 MHz to 1049 MHz. At normal temperature (270) power consumption of the circuit is found to be 151μW at 606 MHz and 157μW at 1049 MHz respectively and consumes an area of 171.42µm2. The design shows good tradeoff between the parameters-operating frequency, phase noise and power consumption