Nieuwe concepten voor golflengte-afstembare laserdiodes voor toekomstige telecommunicatienetwerken = New concepts of wavelength tunable laser diodes for future telecom networks

Widely tunable semiconductor laser diodes with tuning ranges of several tens of nanometers are considered key components in optical telecommunication networks and sensor applications. Those widely tunable lasers can help telecom operators worldwide to respond to the increasing bandwidth demand at a low price, while ntroducing new functionality and higher flexibility in the network. The primary goal of this doctoral research was to evelop and experimentally investigate new types of widely tunable laser diodes that have the same qualities as (non-tunable) DFB lasers, i.e. high output power and high side-mode suppression, and are widely tunable, easily controllable and easily manufacturable. Two new types of widely tunable laser diodes were developed and experimentally investigated during this doctoral research. Both concepts satisfy all the telecom specifications and they have a promising dynamic behavior. Both designs are worthy competitors with other transmitters for optical telecom networks

Cost-effective telecom/datacom semiconductor lasers

The recent development of semiconductor laser technologies for cost-effective telecom/datacom applications is reviewed in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated. Detailed descriptions on our wide temperature range (-50 °C to +105 °C) G-PON distributed feedback (DFB) semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed

Spatial and spectral brightness improvement of single-mode laser diode arrays

This thesis addresses the strong need for efficient and compact techniques for brightness enhancement of laser diode arrays and responds to the challenges created for high performance optics and techniques for laser characterisation. A novel optical inter-leaving method for a 7-bar stack of single-mode emitters, providing a nearly 2-fold improvement in the slow axis beam parameter product, enabling fibre-coupling, is demonstrated. A laser-written dual-axis optics approach is used to perform challenging slow axis collimation combined with fast axis correction for closely-packed 49-single-mode emitter bars, to provide low-loss collimation with high pointing accuracy of less than 3% and 10% of a beam divergence in the fast and slow axis direction, respectively. This produces excellent source for application beam-combined laser diode systems. An emitter-by-emitter simultaneous analysis is used to provide spectra and far field pointing for all emitters and evaluate the performance of various external cavity configurations with Volume Holographic Gratings (VHGs). For the ultra-collimated bars, high efficiency VHG-locking is shown to be maintained over enhanced range of temperatures (>17˚C) and large laser-VHG distances (>110 mm). Highly effective feedback enables the use of a folded cavity configuration for wavelength selection over a range of 8 nm for the full 49-emitter bar, giving a prospect for multi-wavelength single-VHG-locking of bars for cost-effective spectral combining. An innovative technique of wavelength stepping by individually-formed folded cavities for 5 and 7 sections along the bar demonstrates a potential to produce a source for high performance dense spectral beam combining. In a VHG-based Talbot cavity, eight emitters are coherently locked with a highvisibility interference pattern at 1W of output power. The results of phase-locking for full 49-emitter bar show that the slow axis pointing variation of ± 2mrad produces different supermodes, for a fixed alignment of the cavity, thus it must be additionally corrected for further improvement

Wavelength tunable transmitters for future reconfigurable agile optical networks

Wavelength tuneable transmission is a requirement for future reconfigurable agile optical networks as it enables cost efficient bandwidth distribution and a greater degree of transparency. This thesis focuses on the development and characterisation of wavelength tuneable transmitters for the core, metro and access based WDM networks. The wavelength tuneable RZ transmitter is a fundamental component for the core network as the RZ coding scheme is favoured over the conventional NRZ format as the line rate increases. The combination of a widely tuneable SG DBR laser and an EAM is a propitious technique employed to generate wavelength tuneable pulses at high repetition rates (40 GHz). As the EAM is inherently wavelength dependant an accurate characterisation of the generated pulses is carried out using the linear spectrogram measurement technique. Performance issues associated with the transmitter are investigated by employing the generated pulses in a 1500 km 42.7 Gb/s circulating loop system. It is demonstrated that non-optimisation of the EAM drive conditions at each operating wavelength can lead to a 33 % degradation in system performance. To achieve consistent operation over a wide waveband the drive conditions of the EAM must be altered at each operating wavelength. The metro network spans relatively small distances in comparison to the core and therefore must utilise more cost efficient solutions to transmit data, while also maintaining high reconfigurable functionality. Due to the shorter transmission distances, directly modulated sources can be utilised, as less precise wavelength and chirp control can be tolerated. Therefore a gain-switched FP laser provides an ideal source for wavelength tuneable pulse generation at high data rates (10 Gb/s). A self-seeding scheme that generates single mode pulses with high SMSR (> 30 dB) and small pulse duration is demonstrated. A FBG with a very large group delay disperses the generated pulses and subsequently uses this CW like signal to re-inject the laser diode negating the need to tune the repetition rate for optimum gain-switching operation. The access network provides the last communication link between the customer’s premises and the first switching node in the network. FTTH systems should take advantage of directly modulated sources; therefore the direct modulation of a SG DBR tuneable laser is investigated. Although a directly modulated TL is ideal for reconfigurable access based networks, the modulation itself leads to a drift in operating frequency which may result in cross channel interference in a WDM network. This effect is investigated and also a possible solution to compensate the frequency drift through simultaneous modulation of the lasers phase section is examined

Generation and optimization of picosecond optical pulses for use in hybrid WDM/OTDM networks

The burgeoning demand for broadband services such as database queries, home shopping, video-on-demand, remote education, telemedicine and videoconferencing will push the existing networks to their limits. This demand was mainly fueled by the brisk proliferation of Personal Computers (PC) together with the exceptional increases in their storage capacity and processing capabilities and the widespread availability of the internet. Hence the necessity, to develop high-speed optical technologies in order to construct large capacity networks, arises. Two of the most popular multiplexing techniques available in the optical domain that are used in the building of such high capacity networks, are Wavelength Division Multiplexing (WDM) and Optical Time Division Multiplexing (OTDM). However merging these two techniques to form very high-speed hybrid WDM/OTDM networks brings about the merits of both multiplexing technologies. This thesis examines the development of one of the key components (picosecond optical pulses) associated to such high-speed systems. Recent analysis has shown that RZ format is superior to conventional NRZ systems as it is easier to compensate for dispersion and nonlinear effects in the fibre by employing soliton-like propagation. In addition to this development, the use of wavelength tunability for dynamic provisioning is another area that is actively researched on. Self-seeding of a gain switched Fabry Perot laser is shown to one of the simplest and cost effective methods of generating, transform limited optical pulses that are wavelength tunable over very wide ranges. One of the vital characteristics of the above mentioned pulse sources, is their Side Mode Suppression Ratio (SMSR). This thesis examines in detail how the pulse SMSR affects the performance of high-speed WDM/OTDM systems that employ self-seeded gain-switched pulse sources

AlGaAs heterojunction lasers

The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures

Cost-effective telecom/datacom semiconductor lasers

The recent development of semiconductor laser technologies for cost-effective telecom/datacom applications is reviewed in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated. Detailed descriptions on our wide temperature range (-50 °C to +105 °C) G-PON distributed feedback (DFB) semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed

Monolithic Integration Of Dual Optical Elements On High Power Semicond

This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of 65%, the highest reported for a grating-coupled device, can be achieved by lowering the substrate reflectivity using a 200nm period tapered subwavelength grating that has a grating wavevector oriented parallel to the electric field polarization. The low reflectivity structure shows trapezoidal sidewall profiles obtained using a soft mask erosion technique in a single etching step. Finally, we demonstrate that, unlike typical methods reported so far for in-plane beam-shaping of laser diodes, the integration of a beam-splitting element on the device substrate does not affect the device efficiency. The proposed device configuration can be tailored to satisfy a wide range of applications including high power pump lasers, superluminescent diodes, or optical amplifiers applications

Investigation of performance issues affecting optical circuit and packet switched WDM networks

Optical switching represents the next step in the evolution of optical networks. This thesis describes work that was carried out to examine performance issues which can occur in two distinct varieties of optical switching networks. Slow optical switching in which lightpaths are requested, provisioned and torn down when no longer required is known as optical circuit switching (OCS). Services enabled by OCS include wavelength routing, dynamic bandwidth allocation and protection switching. With network elements such as reconfigurable optical add/drop multiplexers (ROADMs) and optical cross connects (OXCs) now being deployed along with the generalized multiprotocol label switching (GMPLS) control plane this represents the current state of the art in commercial networks. These networks often employ erbium doped fiber amplifiers (EDFAs) to boost the optical signal to noise ratio of the WDM channels and as channel configurations change, wavelength dependent gain variations in the EDFAs can lead to channel power divergence that can result in significant performance degradation. This issue is examined in detail using a reconfigurable wavelength division multiplexed (WDM) network testbed and results show the severe impact that channel reconfiguration can have on transmission performance. Following the slow switching work the focus shifts to one of the key enabling technologies for fast optical switching, namely the tunable laser. Tunable lasers which can switch on the nanosecond timescale will be required in the transmitters and wavelength converters of optical packet switching networks. The switching times and frequency drifts, both of commercially available lasers, and of novel devices are investigated and performance issues which can arise due to this frequency drift are examined. An optical packet switching transmitter based on a novel label switching technique and employing one of the fast tunable lasers is designed and employed in a dual channel WDM packet switching system. In depth performance evaluations of this labelling scheme and packet switching system show the detrimental impact that wavelength drift can have on such systems