Low Energy Solutions for Multi- and Triple-Level Cell Non-Volatile Memories

Due to the high refresh power and scalability issues of DRAM, non-volatile memories (NVM) such as phase change memory (PCM) and resistive RAM (RRAM) are being actively investigated as viable replacements of DRAM. However, although these NVMs are more scalable than DRAM, they have shortcomings such as higher write energy and lower endurance. Further, the increased capacity of multi- and triple-level cells (MLC/TLC) in these NVM technologies comes at the cost of even higher write energies and lower endurance attributed to the MLC/TLC program-and-verify (P&V) techniques. This dissertation makes the following contributions to address the high write energy associated with MLC/TLC NVMs. First, we describe MFNW, a Flip-N-Write encoding that effectively reduces the write energy and improves the endurance of MLC NVMs. MFNW encodes an MLC/TLC word into a number of codewords and selects the one resulting in lowest write energy. Second, we present another encoding solution that is based on perfect knowledge frequent value encoding (FVE). This encoding technique leverages machine learning to cluster a set of general-purpose applications according to their frequency profiles and generates a dedicated offline FVE for every cluster to maximize energy reduction across a broad spectrum of applications. Whereas the proposed encodings are used as an add-on layer on top of the MLC/TLC P&V solutions, the third contribution is a low latency, low energy P&V (L3EP) approach for MLC/TLC PCM. The primary motivation of L^3EP is to fix the problem from its origin by crafting a higher speed programming algorithm. A reduction in write latency implies a reduction in write energy as well as an improvement in cell endurance. Directions for future research include the integration and evaluation of a software-based hybrid encoding mechanism for MLC/TLC NVMs; this is a page-level encoding that employs a DRAM cache for coding/decoding purposes. The main challenges include how the cache block replacement algorithm can easily access the page-level auxiliary cells to encode the cache block correctly. In summary, this work presents multiple solutions to address major challenges of MLC/TLC NVMs, including write latency, write energy, and cell endurance

Coset Coding to Extend the Lifetime of Non-Volatile Memory

<p>Modern computing systems are increasingly integrating both Phase Change Memory (PCM) and Flash memory technologies into computer systems being developed today, yet the lifetime of these technologies is limited by the number of times cells are written. Due to their limited lifetime, PCM and Flash may wear-out before other parts of the system. The objective of this dissertation is to increase the lifetime of memory locations composed of either PCM or Flash cells using coset coding. </p><p>For PCM, we extend memory lifetime by using coset coding to reduce the number of bit-flips per write compared to un-coded writes. Flash program/erase operation cycle degrades page lifetime; we extend the lifetime of Flash memory cells by using coset coding to re-program a page multiple times without erasing. We then show how coset coding can be integrated into Flash solid state drives.</p><p>We ran simulations to evaluate the effectiveness of using coset coding to extend PCM and Flash lifetime. We simulated writes to PCM and found that in our simulations coset coding can be used to increase PCM lifetime by up to 3x over writing un-coded data directly to the memory location. We extended the lifetime of Flash using coset coding to re-write pages without an intervening erase and were able to re-write a single Flash page using coset coding more times than when writing un-coded data or using prior coding work for the same area overhead. We also found in our simulations that using coset coding in a Flash SSD results in higher lifetime for a given area overhead compared to un-coded writes.</p>Dissertatio

EFFICIENT SECURITY IN EMERGING MEMORIES

The wide adoption of cloud computing has established integrity and confidentiality of data in memory as a first order design concern in modern computing systems. Data integrity is ensured by Merkle Tree (MT) memory authentication. However, in the context of emerging non-volatile memories (NVMs), the MT memory authentication related increase in cell writes and memory accesses impose significant energy, lifetime, and performance overheads. This dissertation presents ASSURE, an Authentication Scheme for SecURE (ASSURE) energy efficient NVMs. ASSURE integrates (i) smart message authentication codes with (ii) multi-root MTs to decrease MT reads and writes, while also reducing the number of cell writes on each MT write. Whereas data confidentiality is effectively ensured by encryption, the memory access patterns can be exploited as a side-channel to obtain confidential data. Oblivious RAM (ORAM) is a secure cryptographic construct that effectively thwarts access-pattern-based attacks. However, in Path ORAM (state-of-the-art efficient ORAM for main memories) and its variants, each last-level cache miss (read or write) is transformed to a sequence of memory reads and writes (collectively termed read phase and write phase, respectively), increasing the number of memory writes due to data re-encryption, increasing effective latency of the memory accesses, and degrading system performance. This dissertation efficiently addresses the challenges of both read and write phase operations during an ORAM access. First, it presents ReadPRO (Read Promotion), which is an efficient ORAM scheduler that leverages runtime identification of read accesses to effectively prioritize the service of critical-path-bound read access read phase operations, while preserving all data dependencies. Second, it presents LEO (Low overhead Encryption ORAM) that reduces cell writes by opportunistically decreasing the number of block encryptions, while preserving the security guarantees of the baseline Path ORAM. This dissertation therefore addresses the core chal- lenges of read/write energy and latency, endurance, and system performance for integration of essential security primitives in emerging memory architectures. Future research directions will focus on (i) exploring efficient solutions for ORAM read phase optimization and secure ORAM resizing, (ii) investigating the security challenges of emerging processing-in-memory architectures, and (iii) investigating the interplay of security primitives with reliability enhancing architectures

Bit-Flip Aware Data Structures for Phase Change Memory

Big, non-volatile, byte-addressable, low-cost, and fast non-volatile memories like Phase Change Memory are appearing in the marketplace. They have the capability to unify both memory and storage and allow us to rethink the present memory hierarchy. An important draw-back to Phase Change Memory is limited write-endurance. In addition, Phase Change Memory shares with other Non-Volatile Random Access Memories an asym- metry in the energy costs of writes and reads. Best use of Non-Volatile Random Access Memories limits the number of times a Non-Volatile Random Access Memory cell changes contents, called a bit-flip. While the future of main memory is still unknown, we should already start to create data structures for them in order to shape the future era. This thesis investigates the creation of bit-flip aware data structures.The thesis first considers general ways in which a data structure can save bit- flips by smart overwrites and by using the exclusive-or of pointers. It then shows how a simple content dependent encoding can reduce bit-flips for web corpora. It then shows how to build hash based dictionary structures for Linear Hashing and Spiral Storage. Finally, the thesis presents Gray counters, close to bit-flip optimal counters that even enable age- based wear leveling with counters managed by the Non-Volatile Random Access Memories themselves instead of by the Operating Systems