Curie temperature dependence of magnetic properties of CoNi/Pt multilayer films

The Curie temperature of Co1¿xNix/Pt multilayer films (x = 0.5 and 0.6) has been studied as a function of CoNi and Pt layer thicknesses. Magnetic properties at room temperature are dominated by the Curie temperature. Interlayer coupling and interdiffusion are discussed as possible contributions to the thickness dependence of the Curie temperature and magnetic properties

Exchange interactions and Curie temperature in (GaMn)As

We use supercell and frozen-magnon approaches to study the dependence of the magnetic interactions in (Ga,Mn)As on the Mn concentration. We report the parameters of the exchange interaction between Mn spins and the estimates of the Curie temperature within the mean-field and random-phase approximations. In agreement with experiment we obtain a nonmonotonous dependence of the Curie temperature on the Mn concentration. We estimate the dependence of the Curie temperature on the concentration of the carries in the system and show that the decrease of the number of holes in the valence band leads to fast decrease of the Curie temperature. We show that the hole states of the valence band are more efficient in mediating the exchange interaction between Mn spins than the electron states of the conduction band

Nanoengineered Curie Temperature in Laterally-Patterned Ferromagnetic Semiconductor Heterostructures

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.Comment: Submitted to Applied Physics Letters (minor corrections

Electronic and magnetic properties of GaMnAs: Annealing effects

The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in-situ conductivity measurements as well as Raman and SQUID measurements before and after annealing. Whereas the conductivity monotonously increases with increasing annealing time, the hole density and the Curie temperature show a saturation after annealing for 30 minutes. The incorporation of thin InGaMnAs layers drastically enhances the Curie temperature of the GaMnAs layers.Comment: 4 pages, 6 figures, submitted to Physica

Pressure dependence of the Curie temperature in Ni2MnSn Heusler alloy: A first-principles study

The pressure dependence of electronic structure, exchange interactions and Curie temperature in ferromagnetic Heusler alloy Ni2MnSn has been studied theoretically within the framework of the density-functional theory. The calculation of the exchange parameters is based on the frozen--magnon approach. The Curie temperature, Tc, is calculated within the mean-field approximation by solving the matrix equation for a multi-sublattice system. In agrement with experiment the Curie temperature increased from 362K at ambient pressure to 396 at 12 GPa. Extending the variation of the lattice parameter beyond the range studied experimentally we obtained non-monotonous pressure dependence of the Curie temperature and metamagnetic transition. We relate the theoretical dependence of Tc on the lattice constant to the corresponding dependence predicted by the empirical interaction curve. The Mn-Ni atomic interchange observed experimentally is simulated to study its influence on the Curie temperature.Comment: 8 pages, 8 figure

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar $\delta$-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie Temperature by additional confinement of the holes in a $\delta$-doped layer of Mn by a quantum well.Comment: 8 pages, 7 figure